Datasheet 40TPS12, 40TPS08 Datasheet (International Rectifier)

PHASE CONTROL SCR

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Bulletin I2107

40TPS.. SERIES

V

T

< 1.45V @ 40A

Description/Features

The 40TPS... new series of silicon controlled rec­tifiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.

Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi­cal package outlines.

I

TSM

= 400A

VR/ VD= 1200V

Major Ratings and Characteristics

Characteristics 40TPS... Units

I

T(AV)

I

RMS

V
I

TSM

V
dv/dt 500 V/µs
di/dt 150 A/µs
T

Sinusoidal 35 A
waveform

V

/

RRM

DRM

@ 40 A, TJ = 25°C 1.45 V

T

J

55 A

800 and 1200 V

400 A

- 40 to 125 °C

TO-247AC

1

09-96 rev. 1.0

40TPS.. Series

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V oltage Ratings

Part Number

V

RRM/VDRM

peak and off-state voltage peak reverse voltage 125°C

, max. repetitive V

, maximum non repetitive I

RSM

VVmA

40TPS08 800 900 5
40TPS12 1200 1300

Absolute Maximum Ratings

Parameters 40TPS.. Units Conditions

I

Max. Average On-state Current 35 A 50% duty cycle @ TC = 85° C, sinusoidal wave form

T(AV)

I

Max. Continuous RMS 5 5

T(RMS)

On-state Current. As AC switch

I

Max. Peak One Cycle Non-Repetitive 335 A2s 10ms Sine pulse, rated V

TSM

Surge Current 400 10ms Sine pulse, no voltage reapplied TJ = TJ max.

I2t Max. I2t for fusing 560 10ms Sine pulse, rated V

800 10ms Sine pulse, no voltage reapplied

applied Initial

RRM

applied

RRM

RRM/IDRM

I2√t Max. I2√t for fusing 8000 A2√s t = 0.1 to 10ms, no voltage reapplied
V

Low level value of threshold 1.02 V TJ = 125°C

T(TO)1

Voltage

V

High level value of threshold 1.23

T(TO)2

Voltage

r

Low level value of On-state 9.74 mΩ

t1

slope resistance

r

High level value of On-state 7.50

t2

slope resistance

V

Max. Peak On-state Voltage 1.85 V @ 110A, TJ = 25°C

TM

di/dt Max. rate of rise of turned-on Current 150 A/µs TJ = 25°C
I

Max. holding Current 200 mA

H

I

Max. latching Current 400

L

I

/ Max. Reverse and Direct 0.5 TJ = 25°C

RRM

I

Leakage Current 5.0 TJ = 125°C

DRM

VR = rated V

dv/dt Max. rate of rise of off-state Voltage 500 V/µs TJ = 125°C

RRM

/ V

DRM

2

09-96 rev. 1.0

Triggering

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Parameters 40TPS.. Units Conditions

P

Max. peak Gate Power 10 W

GM

P

Max. average Gate Power 2.5

G(AV)

I

Max. peak Gate Current 2.5 A

GM

- VGMMax. peak negative Gate Voltage 10 V
V

Max. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V

GT

to trigger 2.5 TJ = 25°C resistive load

1.7 TJ = 125°C

I

Max. required DC Gate Current 270 mA TJ = - 40°C

GT

to trigger 150 TJ = 25°C

80 TJ = 125°C

40TPS.. Series

V

Max. DC Gate Voltage not to trigger 0.25 V TJ = 125°C, V

GD

I

Max. DC Gate Current not to trigger 6 mA

GD

Thermal-Mechanical Specifications

Parameters 40TPS.. Units Conditions

T

Max. Junction Temperature Range - 40 t o 1 50 °C

J

T

Max. Storage Temperature Range - 40 to 150

stg

R

Max. Thermal Resistance Junction 0.6 °C/W DC operation

thJC

to Case

R

Max. Thermal Resistance Junction 40

thJA

to Ambient

= rated value

DRM

R

Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased

thCS

to Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5) kg-cm

Max. 12 (10) (lbf-in)

Case Style (TO-247)

3

09-96 rev. 1.0

40TPS.. Series

)

)
)

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130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C

0 5 10 15 20 25 3 0 35 40

40TPS..
R (DC) = 0.6 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

80

70

60

50

40

30

20

10

0

Maximum Average On-state Power Loss (W

0 5 10 15 20 25 30 35 40

180°
120°

90°
60°

30°

RMS Limit

Conduction Angle

40TPS..
T = 125°C

J

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

180°

130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 102030405060

30°

60°

Average On-state Current (A)

40TPS..
R (DC) = 0.6 K/W

thJC

Conduction Period

90°

120°

180°

Fig. 2 - Current Rating Characteristics

90

80

70

60

50

40

30

20

10

Maximum Average On-state Power Loss (W

DC
180°
120°

90°

60°

30°

RMS Limit

Conducti on Period

40TPS..
T = 125°C

J

0

0 102030405060

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

DC

400

350

300

250

200

150

Peak Half Sine Wave On-state Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

At Any Rated Load Condition And With

Rated V Applied Following Surge.

40TPS..
Per Junction

1 10 100

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

400

350

300

250

200

150

Peak Half Sine Wave On-state Current (A)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

40TPS..
Per Junction

0.01 0.1 1 10
Pulse Train Duration (s)

J

RRM

4

09-96 rev. 1.0

1000

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100

40TPS..
Per Junction

10

T = 25°C

J

Instantaneous On-state Current (A)

1

0.511.522.533.544.55
Instantaneous On-state Voltage (V)

T = 125°C

J

Fig. 7 - On-state Voltage Drop Characteristics

100

Recta ngular gat e pulse
a)Recommended load line for

rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt: 20 V, 65 ohms

10

tr = 1 µs, tp >= 6 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0. 1 1 10 100 1000

VGD

IGD

(a)

(b)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

40TPS..

Instantaneous Gate Current (A)

(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

(4) (3) (2) (1)

Frequency Limited by PG(AV)

40TPS.. Series

1

thJC

0.01

Transient Thermal Impedance Z (K/W)

D = 0.50
D = 0.33

D = 0.25
D = 0.17

0.1

D = 0.08

0.001 0.01 0.1 1

Single Pulse

Fig. 8 - GateCharacteristics

Square Wave Pulse Duration (s)

Fig. 9 - Thermal Impedance Z

5

Steady State Value
(DC Operation)

40TPS..

Characteristics

thJC

09-96 rev. 1.0

40TPS.. Series

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Outline T able

20.30 (0.800)

19.70 (0.775)

14.80 (0.583)

14.20 (0.559)

1.40 (0.056)

1.00 (0.039)

10.94 (0.430)

10.86 (0.427)

15.90 (0.626)

15.30 (0.602)

123

4.30 (0.17 0)

3.70 (0.14 5)

3.65 (0.144)

3. 55 (0.139)

5.70 (0.22 5)

5.30 ( 0.208)

2.20 (0.08 7)
MAX.

DIA.

5.50 ( 0.217)

4.50 (0.177)
(2 PLCS.)

5.30 (0.20 9)

4.70 ( 0.185)

0. 80 (0. 0 32 )

0.40 (0.213)

2. 5 (0. 0 98 )

1.5 (0.059)

2. 40 (0.095)
MAX.

Ordering Information T able

Device Code

40 T P S 12

1

243

1- Current Rating
2 - Circuit Configuration

T = Thyristor

3 - Package

T = TO-247

4 - Type of Silicon

S = Standard Recovery Rectifier

5 - Voltage code: Code x 100 = V

Dimensions in millimeters and inches

5

08 = 800V

RRM

12 = 1200V

2

(A)

1 (K)

(G) 3

6

09-96 rev. 1.0