Datasheet 40HFL100S05, 40HFL60S02 Specification

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DO-5 (DO-203AB)

(Stud Version), 40 A, 70 A, 85 A

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-5 (DO-203AB)

Circuit Configuration Single

40 A, 70 A, 85 A

VS-40HFL, VS-70HFL, VS-85HFL Series

Fast Recovery Diodes

FEATURES

• Short reverse recovery time

• Low stored charge

• Wide current range

• Excellent surge capabilities

• Stud cathode and stud anode versions

• Types up to 100 V

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC power supplies

•Inverters

• Converters

• Choppers

• Ultrasonic systems

• Freewheeling diodes

Vishay Semiconductors

RRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS 40HFL 70HFL 85HFL UNITS

I

F(AV)

I

FSM

2

t

I

2

t 11 300 34 650 85 560 I2s

I

V

RRM

t

rr

T

J

T

maximum 85 85 85 °C

C

50 Hz 400 700 1100

60 Hz 420 730 1151

50 Hz 800 2450 6050

60 Hz 730 2240 5523

Range 100 to 1000 100 to 1000 100 to 1000 V

Characteristics table

Range -40 to +125 -40 to +125 -40 to +125 °C

40 70 85 A

See Recovery

See Recovery

Characteristics table

See Recovery

Characteristics table

A

A2s

ns

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Document Number: 93150

VS-40HFL, VS-70HFL, VS-85HFL Series

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ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

TYPE NUMBER

(1)

PEAK REPETITIVE

REVERSE VOLTAGE

T

= - 40 °C TO 125 °C

J

V

VS-40HFL10S02, VS-40HFL10S05 100 150

VS-40HFL20S02, VS-40HFL20S05 200 300

VS-40HFL40S02, VS-40HFL40S05 400 500

VS-40HFL60S02, VS-40HFL60S05 600 700

VS-40HFL80S05 800 900

VS-40HFL100S05 1000 1100

VS-70HFL10S02, VS-70HFL10S05 100 150

VS-70HFL20S02, VS-70HFL20S05 200 300

VS-70HFL40S02, VS-70HFL40S05 400 500

VS-70HFL60S02, VS-70HFL60S05 600 700

VS-70HFL80S05 800 900

VS-70HFL100S05 1000 1100

VS-85HFL10S02, VS-85HFL10S05 100 150

VS-85HFL20S02, VS-85HFL20S05 200 300

VS-85HFL40S02, VS-85HFL40S05 400 500

VS-85HFL60S02, VS-85HFL60S05 600 700

VS-85HFL80S05 800 900

VS-85HFL100S05 1000 1100

Note

(1)

Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.



V

, MAXIMUM PEAK

RSM

NON-REPETITIVE
REVERSE VOLTAGE
T

= 25 °C TO 125 °C

J

V

Vishay Semiconductors

I

, MAXIMUM PEAK REVERSE

FM

CURRENT AT RATED V

mA

= 25 °C TJ = 125 °C

T

J

0.1 10

0.1 15

0.1 20

RRM

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS

Maximum average forward current 
at maximum case temperature

Maximum RMS forward current I

Maximum peak repetitive forward current I

Maximum peak, one-cycle 
non-repetitive forward current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing

(1)

Maximum value of threshold voltage V

Maximum value of forward slope resistance r

Maximum forward voltage drop V

Note

(1)I2

t for time tx = I2t x t

x

I

F(AV)

F(RMS)

FRM

180° conduction, half sine wave

Sinusoidal half wave, 30° conduction 220 380 470 A

t = 10 ms Sinusoidal half wave, 100

% V

reapplied,

RRM

initial T

= TJ maximum

J

no voltage reapplied,

= TJ maximum

initial T

J

100 % V
initial T

reapplied,

RRM

= TJ maximum

J

No voltage reapplied,
initial T

= TJ maximum

J

I

FSM

t = 8.3 ms 420 730 1151

t = 10 ms Sinusoidal half wave,

t = 8.3 ms 500 870 1369

t = 10 ms

t = 8.3 ms 730 2240 5523

t = 10 ms

t = 8.3 ms 1030 3160 7810

I2t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 650 85 560 A2s

F(TO)

TJ = 125 °C

F

TJ = 25 °C, IFM =  x I

FM

F(AV)

40 70 85 A

75 °C

63 110 134 A

400 700 1100

475 830 1308

800 2450 6050

1130 3460 8556

1.081 1.085 1.128 V

6.33 3.40 2.11 m

1.95 1.85 1.75 V

A

2

A

s

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Document Number: 93150

VS-40HFL, VS-70HFL, VS-85HFL Series

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RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS

TJ = 25 °C, IF = 1 A to VR = 30 V,
dI

/dt = 100 A/μs

Typical reverse recovery time t

rr

F

= 25 °C, - dIF/dt = 25 A/μs,

T

J

I

=  x rated I

FM

F(AV)

TJ = 25 °C, IF = 1 A to VR = 30 V,
dI

/dt = 100 A/μs

Typical reverse recovered charge Q

rr

F

= 25 °C, - dIF/dt = 25 A/μs,

T

J

I

=  x rated I

FM

F(AV)

40HFL... 70HFL... 85HFL...

S02S05S02S05S02S05

70 180 60 150 50 120

200 500 200 500 200 500

160 750 90 500 70 340

240 1300 240 1300 240 1300

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS

Junction operating temperature range T

Storage temperature range T
Maximum thermal resistance,

junction to case
Maximum thermal resistance,

case to heatsink

Maximum allowable mounting torque
(+ 0 %, - 10 %)

Approximate weight

Case style JEDEC

Notes

(1)

Recommended for pass-through holes

(2)

Recommended for holed threaded heatsinks

R

R

J

Stg

thJC

thCS

DC operation 0.60 0.36 0.30

Mounting surface, smooth,
flat and greased

Not lubricated thread, tighting on nut

Lubricated thread, tighting on nut

(1)

Not lubricated thread, tighting on hexagon

Lubricated thread, tighting on hexagon

®

Vishay Semiconductors

-40 to 125

-40 to 150

0.25

(1)

(2)

(2)

3.4 (30)

2.3 (20)

4.2 (37)

3.2 (28)

25

0.88

DO-5 (DO-203AB)

UNITS

(lbf · in)

ns

nC

°C

K/W

N · m

I

F

dI

F

I

t

t

IF, IFM - Peak forward current prior to commulation

/dt - Rate of fail forward current

-dI

F

(REC) - Peak reverse recovery current

I

RRM

- Reverse recovery time

t

rr

- Reverse recovered charge

Q

rr

FM

V

I

R

RRM (REC)

I

RRM (REC)

dt

t

rr

Q

rr

Fig. 1 - Reverse Recovery Time Test Waveform

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Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

Ø = 180 °

120 °

90 °
60 °
30 °

0

15 205010 253035 304040 20 50 60 7010 9080 100

10

20

30

40

50

60

70

Ø

Conduction Angle

RMS limit

TJ = 125 °C

40HFL...

R

thSA

= 0.3 - ΔR K/W

0.5 - ΔR

0.7 - ΔR

1.0 - ΔR

1.5 - ΔR

2.0 - ΔR

3 - ΔR

4 - ΔR

5 - ΔR

RMS limit

TJ = 25 °C

40HFL...

R

thSA

= 0.3 - ΔR K/W

0.5 - ΔR

Ø = DC

180°
120°

60°

Conduction Angle

Ø

0.7 - ΔR

1.0 - ΔR

1.5 - ΔR

2.0- ΔR

3 - ΔR

4 - ΔR

30 4010020 5060 304070 20 50 60 7010 9080 100

0

10

20

30

40

50

60

100

90

80

70

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

RMS limit

TJ = 125 °C

70HFL...

R

thSA

= 0.3 - ΔR K/W

0.5 - ΔR

Ø = 180°

120°

90°
60°
30°

Ø

Conduction Angle

0.7 - ΔR

1.0 - ΔR

1.5 - ΔR

2.0 - ΔR

3 - ΔR

4 -

ΔR

30 4010020 5060 304070 20 50 60 7010 9080 100

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

0

20

40

60

100

120

80

Maximum Average Forward Power Loss (W)

Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

Revision: 11-Jan-18

Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series

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Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series

4

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Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

30 4020 50 60 7010 9080 100

6820 4 10 12

14 16

0

10

15

20

25

5

85HFL...

TJ = 150 °C

RMS limit

Ø = 180°

120°

60°
30°

Ø

Conduction Angle

R

thSA

= 3.0 - ΔR K/W

1.0 - ΔR

1.5 - ΔR

2.0 - ΔR

4 - ΔR

5 - ΔR

6 - ΔR

8 - ΔR

10 - ΔR

15 - ΔR

20 - ΔR

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

30

70HFL...

25

20

15

10

RMS limit

5

0

Maximum Average Forward Power Loss (W)

TJ = 150 °C

Ø = 180°

120°

60°
30°

6820 4 10 12 30 4020 20 50 60 7010 9080 100

DC

Ø

Conduction Angle

14

18

16

6- ΔR

8 - ΔR

10 - ΔR

15- ΔR

20 -

ΔR

no heatsink

4 - ΔR

5 - ΔR

R

thSA

3 - ΔR

1.0 - ΔR

= 2.0 - ΔR K/W

0.5 - ΔR

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series

Revision: 11-Jan-18

Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series

35

85HFL...

30

TJ = 150 °C

Ø = 180°

25

20

15

10

5

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Maximum Average Forward Power Loss (W)

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120°

60°
30°

RMS limit

DC

Ø

Conduction Angle

0 5 10 30 4025 20 50 60 7010 9080 10015

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series

20

5

R

thSA

5 - ΔR

6 - ΔR

8 - ΔR

10 - ΔR

15 - ΔR

2.0 - ΔR

= 3.0 - ΔR K/W

4 - ΔR

1.5 - ΔR

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1.0 - ΔR

0.5 - ΔR

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Average Forward Current (A)

10

2

10

3

10

4

10

10

3

10

4

10

10

2

Maximum Average Forward

Power Loss (W)

TJ = 125 °C

70HFL...

Ø = DC

180°
120°

60°
30°

Ø = 180°

120°

60°
30°

Ø

Ø

Average Forward Current (A)

10

2

10

3

10

4

10

10

3

10

4

10

10

2

Maximum Average Forward

Power Loss (W)

TJ = 125 °C

85HFL...

Ø = DC

180°
120°

60°
30°

Ø = 180°

120°

60°
30°

Ø

Ø

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

0 1 324

1

10

3

10

2

10

85HFL...

TJ = 125 °C

TJ = 25 °C

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

4

10

40HFL...

TJ = 125 °C

Ø = 180°

120°

3

10

60°
30°

Ø = DC

180°
120°

60°

Ø

2

10

Power Loss (W)

30°

Ø

Maximum Average Forward

10

0

2

10

3

10

Average Forward Current (A)

Fig. 8 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 40HFL Series

3

10

40HFL...

2

10

TJ = 125 °C

10

TJ = 25 °C

Instantaneous Forward Current (A)

4

10

1

0 0.5 3.51.0 3.01.5 2.0 2.5 4.0

Instantaneous Forward Voltage (V)

Fig. 11 - Maximum Forward Voltage vs. Forward Current,

40HFL Series

3

10

70HFL...

2

10

TJ = 125 °C

10

TJ = 25 °C

Instantaneous Forward Current (A)

1

0 0.5 3.51.0 3.01.5 2.0 2.5 4.0

Instantaneous Forward Voltage (V)

Fig. 9 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 70HFL Series

Fig. 10 - Maximum High Level Forward Power Loss vs.

Average Forward Current, 85HFL Series

Revision: 11-Jan-18

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Fig. 12 - Maximum Forward Voltage vs. Forward Current,

70HFL Series

Fig. 13 - Maximum Forward Voltage vs. Forward Current,

85HFL Series

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Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

100

80

40

20

120

140

0

80

100

125

40

60

70

90

110

50

60

Ø = 180°

120°

90°
60°
30°

Ø

Ø = 180°

120°

60°
30°

Ø

85HFL...

DC

10

-2

10

-1

1

10

-3
10

-2
10

-1
1

Square Wave Pulse Duration (s)

40HFL...

70HFL...

85HFL...

Transient Thermal Impedance

Junction to Case (K/W)

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

125

110

100

90

Ø = 180°

80

70

Temperature (°C)

60

Maximum Allowable Case

50

40

120°

90°
60°
30°

Ø

0

20

10

Average Forward Current (A)

30

40HFL...

40

Ø = 180°

120°

60°
30°

50

Ø

DC

60

70

Fig. 14 - Average Forward Current vs. Maximum Allowable Case

Temperature, 40HFL Series

125

110

100

90

Ø = 180°

80

70

Temperature (°C)

60

Maximum Allowable Case

50

40

0

70HFL...

Ø = 180°

120°

60°
30°

120°

90°
60°
30°

Ø

40

20

Average Forward Current (A)

80

60

DC

100

Ø

120

Fig. 15 - Average Forward Current vs. Maximum Allowable Case

Temperature, 70HFL Series

Fig. 16 - Average Forward Current vs. Maximum Allowable Case

Temperature, 85HFL Series

1.0

0.8

0.6

0.4

Forward Current (Per Unit)

0.2

Normalized Peak Half Sine Wave

0

At Any Rated Load Condition And With
Rated V

1

Applied Following Surge.

rrm

50 Hz

4

2

6810

60 Hz

20

60

40

Number Of Equal Amplitude
Halfe Cycle Current Pulses (N)

Fig. 17 - Maximum Non-Repetitive Surge Current

vs. Number of Current Pulses, All Series

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Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series

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31030

100

1

10

10

2

10

3

10

4

10

5

IF = 125 A
I

F

= 20 A

I

F

= 1 A

TJ = 125 °C

T

J

= 25 °C

Recovered Charge (nC)

Rate of Fall of Forward Current (A/μs)

40HFL...S02

Rate of Fall of Forward Current (A/μs)

13 3010 100

100

200

300

400

500

600

1000

2000

3000

6000

4000

5000

Reverse Recovery Time (ns)

40HFL...S10

TJ = 25 °C
I

F

= 125 A

I

F

= 20 A

I

F

= 1 A

TJ = 125 °C
I

F

= 125 A

I

F

= 20 A

I

F

= 1 A

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

1000

40HFL...S02

600
500
400

300

200

TJ = 25 °C

100

I

= 125 A

F

= 20 A

I

F

60

I

= 1 A

50

F

40
30

20

Reverse Recovery Time (ns)

TJ = 125 °C

= 125 A

I

F

I

= 20 A

F

I

= 1 A

F

10

13 3010 100

Rate of Fall of Forward Current (A/μs)

Fig. 19 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 40HFL...S02 Series

5

10

40HFL...S05

IF = 125 A

= 20 A

TJ = 25 °C

I

F

= 1 A

I

F

4

10

3

10

2

10

Recovered Charge (nC)

TJ = 125 °C

10

1

31030

Rate of Fall of Forward Current (A/μs)

Fig. 22 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 40HFL...S05 Series

100

Fig. 20 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 40HFL...S02 Series

40HFL...S05

6000
5000
4000

3000

2000

1000

600
500
400

TJ = 25 °C

300

I

200

Reverse Recovery Time (ns)

Revision: 11-Jan-18

I
I

100

13 3010 100

Rate of Fall of Forward Current (A/μs)

Fig. 21 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 40HFL...S05 Series

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= 125 A

F

= 20 A

F

= 1 A

F

Fig. 23 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 40HFL...Series

5

10

TJ = 125 °C
I

= 125 A

F

I

= 20 A

F

I

= 1 A

F

40HFL...S10

4

10

3

10

2

10

Recovered Charge (nC)

10

1

TJ = 125 °C

= 25 °C

T

J

Rate of Fall of Forward Current (A/μs)

IF = 125 A

= 20 A

I

F

= 1 A

I

F

31030

Fig. 24 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 40HFL...Series

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100

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31030

100

1

10

10

2

10

3

10

4

10

5

IF = 220 A
I

F

= 50 A

I

F

= 1 A

TJ = 125 °C

T

J

= 25 °C

Recovered Charge (nC)

Rate of Fall of Forward Current (A/μs)

70HFL...S02

Rate of Fall of Forward Current (A/μs)

13 3010 100

100

200

300

400

500

600

1000

2000

3000

6000

4000

5000

Reverse Recovery Time (ns)

70HFL...S10

TJ = 25 °C
I

F

= 220 A

I

F

= 50 A

I

F

= 1 A

TJ = 125 °C
I

F

= 220 A

I

F

= 50 A

I

F

= 1 A

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

1000

70HFL...S02

500
400

300

200

TJ = 25 °C

100

= 220 A

I

F

I

= 50 A

F

60

I

= 1 A

50

F

40
30

20

Reverse Recovery Time (ns)

TJ = 125 °C
I

= 220 A

F

I

= 50 A

F

I

= 1 A

F

10

13 3010 100

Rate of Fall of Forward Current (A/μs)

Fig. 25 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 70HFL...S02 Series

4

10

70HFL...S05

3

10

2

10

TJ = 125 °C

IF = 220 A

= 50 A

I

F

= 1 A

I

F

10

Recovered Charge (nC)

T

= 25 °C

J

1

1

31030

Rate of Fall of Forward Current (A/μs)

Fig. 28 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 70HFL...S05 Series

100

Fig. 26 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 70HFL...S02 Series

70HFL...S05

4000
3000

2000

1000

600
500
400

TJ = 25 °C

300

I

200

Reverse Recovery Time (ns)

Revision: 11-Jan-18

I
I

100

13 3010 100

Rate of Fall of Forward Current (A/μs)

Fig. 27 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 70HFL...S05 Series

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= 220 A

F

= 50 A

F

= 1 A

F

Fig. 29 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 70HFL... Series

5

10

TJ = 125 °C

= 220 A

I

F

I

= 50 A

F

I

= 1 A

F

4

10

TJ = 125 °C

3

10

2

10

Recovered Charge (nC)

10

1

70HFL...S10

Rate of Fall of Forward Current (A/μs)

IF = 220 A
I

= 50 A

F

= 1 A

I

F

= 25 °C

T

J

31030

Fig. 30 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 70HFL... Series

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Reverse Recovery Time ()

Rate of Fall of Forward Current (A/μs)

410 40

100

1

10

10

2

10

3

85HFL...S02

TJ = 125 °C
I

F

= 265 A

I

F

= 50 A

I

F

= 1 A

TJ = 25 °C
I

F

= 265 A

I

F

= 50 A

I

F

= 1 A

Recovered Charge (nC)

Rate of Fall of Forward Current (A/μs)

10

100

1

1

10

10

4

10

2

10

3

85HFL...S02

IF = 265 A
I

F

= 50 A

I

F

= 1 A

T

J

= 125 °C

T

J

= 25 °C

Reverse Recovery Time (ns)

Rate of Fall of Forward Current (A/μs)

4

10 40

100

1

10

2

10

3

10

4

85HFL...S05

TJ = 25 °C
I

F

= 265 A

I

F

= 50 A

I

F

= 1 A

TJ = 125 °C
I

F

= 265 A

I

F

= 50 A

I

F

= 1 A

Recovered Charge (nC)

Rate of Fall of Forward Current (A/μs)

10

100

1

10

10

2

10

5

10

4

10

3

85HFL...S05

IF = 265 A
I

F

= 50 A

I

F

= 1 A

T

J

= 25 °C

T

J

= 125 °C

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

Fig. 31 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 85HFL...S02 Series

Fig. 32 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 85HFL...S02 Series

Fig. 34 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 85HFL...S05 Series

3

10

2

10

85HFL...S10

TJ = 125 °C

= 265 A

I

F

= 50 A

I

F

= 1 A

I

F

TJ = 25 °C

= 265 A

I

F

= 50 A

I

F

I

Reverse Recovery Time (ns)

= 1 A

F

10

1

41040

Rate of Fall of Forward Current (A/μs)

Fig. 35 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 85HFL... Series

5

10

85HFL...S10

IF = 265 A

3

10

= 50 A

I

F

= 1 A

I

F

100

Fig. 33 - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, 85HFL...S05 Series

Revision: 11-Jan-18

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4

10

10

Recovered Charge (nC)

= 25 °C

J

T

2

10

= 25 °C

J

T

1

Rate of Fall of Forward Current (A/μs)

Fig. 36 - Typical Recovered Charge vs.

Rate of Fall of Forward Current, 85HFL... Series

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ORDERING INFORMATION TABLE

VS-40HFL, VS-70HFL, VS-85HFL Series

Vishay Semiconductors

Device code

1

2

70VS- HFL R 100 S02 M

51 32 4

- Vishay Semiconductors product

- • 70 = standard device (current rating: 40 = 40 A, 70 = 70 A, 85 = 85 A)

6

7

• 71 = not isolated lead

• 72, 87 = isolated lead with silicone sleeve

(red = reverse polarity)

(blue = normal polarity)

- HFL = fast recovery diode

3

- • None = stud normal polarity (cathode to stud)

4

• R = stud reverse polarity (anode to stud)

- Voltage code x 10 = V

5

- Refer to “Recovery Characteristics” table

6

7

- • None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A

(see “Voltage Ratings” table)

RRM

• M = stud base DO-5 (DO-203AB) M6 x 1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95312

Revision: 11-Jan-18

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Document Number: 93150

DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL

DIMENSIONS FOR 40HFL/70HFL in millimeters (inches)

Ø 14.6 (0.57)

6.1/7

(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)

11.4 (0.45)

Outline Dimensions

Vishay Semiconductors

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.40 (0.68)

Document Number: 95312 For technical questions, contact: [e-mail]
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Outline Dimensions

Vishay Semiconductors

DO-203AB (DO-5) for

40HFL, 70HFL and 85HFL

DIMENSIONS FOR 85HFL in millimeters (inches)

Ø 15 (0.59)

6.1/7

(0.24/0.27)

25.4 (1) MAX.

11.1 ± 0.4

(0.44 ± 0.02)

4 (0.16)

4 (0.16) MIN.

10.8 (0.42)

11.4 (0.45)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.35 (0.68)

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Document Number: 95312

Legal Disclaimer Notice

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Revision: 01-Jan-2023

1

Document Number: 91000