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INPUT RECTIFIER DIODE
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Bulletin I2104A
40EPS.. SERIES
V
< 1V @ 20A
F
I
FSM
Description/Features
The 40EPS rectifier series has been optimized for
very low forward voltage drop with moderate
leakage. The glass passivation technology used
operates reliably up to 150°C junction temperature.
Typical applications are in input rectification, and
these products are designed to be used with
International Rectifier switches and output
rectifiers which are available in identical package
outlines.
Output Current in Typical Applications
Single-phase Bridge Three-phase Bridge Units
Capacitive input filter TA = 55°C, TJ = 125°C, 21.3 27.3 A
common heatsink of 1°C/W
V
= 475A
800 to 1600V
RRM
Major Ratings and Characteristics
Characteristics 40EPS.. Units
I
Sinusoidal 40 A
F(AV)
waveform
V
RRM
I
FSM
VF @ 20A, TJ = 25°C 1.0 V
T
J
800 to 1600 V
475 A
- 40 to 150 °C
TO-247AC (Modified)
Page 2
40EPS.. Series
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Voltage Ratings
Part Number
40EPS08 800 900
40EPS12 1200 1300 1
40EPS16 1600 1700
Absolute Maximum Ratings
Parameters 40EPS.. Units Conditions
I
Max. Average Forward Current 40 A @ TC = 105° C, 180° conduction half sine wave
F(AV)
I
Max. Peak One Cycle Non-Repetitive 400 10ms Sine pulse, rated V
FSM
Surge Current 475 10ms Sine pulse, no voltage reapplied
V
, maximum V
RRM
, maximum non repetitive I
RSM
RRM
peak reverse voltage peak reverse voltage 150°C
VVmA
applied
RRM
A
I2t Max. I2t for fusing 800 10ms Sine pulse, rated V
1131 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 8000 A2√s t = 0.1 to 10ms, no voltage reapplied
Electrical Specifications
Parameters 40EPS.. Units Conditions
V
Max. Forward Voltage Drop 1.1 V @ 40A, TJ = 25°C
FM
r
Forward slope resistance 7.16 mΩ
t
V
Threshold voltage 0.74 V
F(TO)
I
Max. Reverse Leakage Current 0.1 TJ = 25 °C
RM
1.0 TJ = 150 °C
Thermal-Mechanical Specifications
Parameters 40EPS.. Units Conditions
T
Max. Junction Temperature Range - 40 to 150 °C
J
T
Max. Storage Temperature Range - 40 to 150 °C
stg
R
Max. Thermal Resistance Junction 0.6 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 40 °C/W
thJA
to Ambient
R
Typical Thermal Resistance, Case to 0.2 °C/W Mounting surface , smooth and greased
thCS
Heatsink
wt Approximate Weight 6 (0.21) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-247AC JEDEC (Modified)
A2s
mA
Kg-cm
(Ibf-in)
TJ = 150°C
applied
RRM
VR = rated V
RRM
2
Page 3
40EPS.. Series
45
)
70
)
40
)
70
)
1
d
d
t
3
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150
145
140
135
130
125
120
115
110
105
100
95
Maximum Allowable Cas e Temperature (°C
0 5 10 15 20 25 30 35 40
Average Forward Current (A)
40 EPS.. Series
R (DC) = 0 .6 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Fig. 1 - Current Rating Char-
60
55
50
45
40
35
30
25
20
15
10
5
0
M aximum Average Forward Power Loss (W
0 5 10 15 20 25 30 35
Average Forward Current (A)
acteristics
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
40 EPS.. Series
T = 150 °C
J
Fig. 3 - Forward Power Loss Charac-
teristics
1000
100
10
T = 25°C
J
T = 1 50°C
J
150
140
130
120
110
100
Maximum Allowable C ase Temperature (°C
30°
0 102030405060
Average Forward Current (A)
40 EPS.. Series
R (DC) = 0 .6 K / W
thJC
Conduction Period
60°
90°
120°
180°
DC
Fig. 2 - Current Rating Charac-
80
70
60
50
40
30
20
10
Max imu m Av era ge Forw ard Po w er Los s (W
DC
180°
120°
90°
60°
30°
RMS Limit
0
0 102030405060
Averag e Forward Current (A )
teristics
Conduction Period
40 EPS .. Seri es
T = 1 50°C
J
Fig. 4 - Forward Power Loss Charac-
teristics
500
Maximum Non Repe titive Surge Curren
450
400
350
300
250
200
Versus Pulse Train Duration.
Initial T = 150 °C
No Voltage Reapplie
Rated V R eapplie
J
RRM
Instantaneous Forward Current (A)
1
00.511.522.5
Instantaneous Forward Voltage (V)
Fig. 5 - Forward Voltage Drop Character-
istics
40 EPS .. Serie s
150
40EP S.. Series
Peak Half S ine Wave Forward Cu rrent (A)
100
0.01 0.1
Pulse Trai n Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge
Current
3
Page 4
40EPS.. Series
1
)
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1
thJC
0.1
Transient Thermal I mpedance Z (K/W
0.01
0.001 0.01 0.1
Outline Table
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
Square Wave P u lse Dura t ion (s)
Fig. 7 - Thermal Impedance Z
Stead y State Value:
(DC Operation)
Characteristics
thJC
40EPS.. Series
15. 90 (0 .626 )
15. 30 (0 .602 )
3. 65 (0.144)
3. 55 ( 0.139)
DIA.
5. 30 ( 0.209)
4.70 (0.185)
2.5 (0.098)
1.5 (0. 059)
5. 70 (0.225)
5.30 (0.208)
20.30 (0 .800 )
19.70 (0 .775 )
5.50 (0.217)
4. 50 (0 .17 7)
1 3
(2 PLCS.)
14. 80 ( 0.583)
14. 20 ( 0.559)
1.40 (0 .05 6)
1.00 (0 .03 9)
4. 30 (0 .17 0)
3. 70 (0 .14 5)
2. 20 ( 0.087)
MAX.
2. 40 ( 0.095)
MAX.
0.80 (0. 032)
0.40 (0 .21 3)
10. 94 ( 0.430)
10. 86 (0 .427 )
Dimensions in millimeters and inches
4
Page 5
Ordering Information Table
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Device Code
40EPS.. Series
40 E P S 16
1
243
1- Current Rating
2 - Circuit Configuration
E = Single Diode
3 - Package
P = TO-247AC (Modified)
4 - Type of Silicon
S = Standard Recovery Rectifier
5 - Voltage code: Code x 100 = V
6
5
RRM
08 = 800V
12 = 1200V
16 = 1600V
BASE
CATHODE
1
CATHODE
2
3
ANODE
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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Data and specifications subject to change without notice. 6/95
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