Datasheet 3SK300 Datasheet (HIT)

Silicon N Channel Dual Gate MOS FET

Features

• Low noise figure

NF = 1.0 dB typ. at f = 200 MHz

• High gain

PG = 27.6 dB typ. at f = 200 MHz

Outline

3SK300

UHF / VHF RF Amplifier

ADE-208-449

1st. Edition

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK300

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate 1 to source voltage V Gate 2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

14 V

±8V ±8V

25 mA

2

3SK300

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown voltage

Gate 1 to source breakdown voltage

Gate 2 to source breakdown voltage

Gate 1 cutoff current I

Gate 2 cutoff current I

Drain current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

V

(BR)DSX

V

(BR)G1SS

V

(BR)G2SS

G1SS

G2SS

DS(op)

G1S(off)

G2S(off)

14 — — V ID = 200 µA, V

V

= –3 V

G2S

±8— —V IG1 = ±10 µA,

V

= V

DS

G2S

±8— —V IG2 = ±10 µA,

V

= V

DS

G1S

——±100 nA V

G1S

V

DS

G2S

V

DS

= ±6 V,

= V

G2S

= ±6 V,

= V

G1S

4 8 14 mA VDS = 6 V, V

V

= 3 V

G2S

0 +0.2 +1.0 V VDS = 10 V, V

I

= 100 µA

D

0 +0.3 +1.0 V VDS = 10 V, V

I

= 100 µA

D

Forward transfer admittance |yfs| 20 25 — ms VDS = 6 V, V

I

= 10 mA, f = 1 kHz

D

Input capacitance Ciss 2.4 3.1 3.5 pF VDS = 6 V, Output capacitance Coss 0.8 1.1 1.4 pF V

= 3 V, ID = 10 mA

G2S

Reverse transfer capacitance Crss — 0.021 0.04 pF f = 1 MHz Power gain PG 24 27.6 — dB VDS = 6 V, V Noise figure NF — 1.0 1.5 dB ID = 10 mA, f = 200 MHz Power gain PG 12 15.6 — dB VDS = 6 V, V Noise figure NF — 3.0 4.0 dB ID = 10 mA, f = 900 MHz Noise figure NF — 2.7 3.5 dB VDS = 6 V, V

I

= 10 mA, f = 60 MHz

D

Note: Marking is “ZR–”

= 0

G1S

G2S

= –3 V,

G1S

= 0.75 V,

= 3 V,

G2S

= 3 V,

G1S

= 3 V,

3

3SK300

Main Characteristics

Maximum Channel Power

Dissipation Curve

200

150

(mA)

D

20

16

12

Typical Output Characteristics

1.2 V

1.0 V

V

= 3 V

G2S

Pulse test

100

50

Channel power dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs. Gate1 to Source Voltage

20

16

3.0 V

2.5 V

2.0 V

VDS = 6 V Pulse test

1.5 V

(mA)

D

12

8

Drain current I

4

0

12345

1.0 V

V

G2S

= 0.5 V

Gate1 to source voltage V

G1S

(V)

8

0.8 V

Drain current I

4

0

210

0.6 V

V

= 0.4 V

G1S

468

Drain to source voltage V

Drain Current vs. Gate2 to Source Voltage

20

16

(mA)

D

12

3.0 V

2.5 V

1.5 V

2.0 V

1.0 V

VDS = 6 V Pulse test

8

Drain current I

4

0

12345

Gate2 to source voltage V

V

G1S

= 0.5 V

G2S

DS

(V)

4

30

V f = 1kHz

fs|

24

|y (ms)

Forward Transfer Admittance vs.

Gate1 to Source Voltage

= 6 V

DS

3 V

50

40

3SK300

Power Gain vs. Drain Current

VDS = 6 V V

= 3V

G2S

f = 200MHz

18

12

6

V

Forward transfer admittance

0

G2S

0.4 0.8 1.2 1.6 2

1 V

= 0.5 V

Gate1 to source voltage V

Noise Figure vs. Drain Current

5

4

3

2

Noise figure NF (dB)

1

2 V

1.5 V

VDS = 6 V V

G2S

f = 200MHz

2.5 V

G1S

= 3V

(V)

30

20

Power gain PG (dB)

10

0

4 8 12 16 20

Drain current I

Power Gain vs. Drain to Source Voltage

50

40

30

20

Power gain PG (dB)

10

(mA)

D

V

G2S

I

= 10mA

D

f = 200MHz

= 3V

048121620

Drain current I

(mA)

D

0 246810

Drain to source voltage V

DS

(V)

5

3SK300

Noise Figure vs. Drain to Source Voltage

5

V

= 3V

G2S

I

= 10mA

4

D

f = 200MHz

3

2

Noise figure NF (dB)

1

0246810

Drain to source voltage V

Noise Figure vs. Drain Current

5

DS

(V)

4

20

Power Gain vs. Drain Current

16

12

8

V

Power gain PG (dB)

4

0

4 8 12 16 20 Drain current I

DS

V

G2S

f = 900MHz

(mA)

D

Power Gain vs. Drain to Source Voltage

20

16

= 6V

= 3V

3

2

Noise figure NF (dB)

1

VDS = 6V V

= 3V

G2S

f = 900MHz

048121620

Drain current I

D

(mA)

12

8

Power gain PG (dB)

4

0

246810

Drain to source voltage V

V

= 3V

G2S

I

= 10mA

D

f = 900MHz

(V)

DS

6

3SK300

Noise Figure vs. Drain to Source Voltage

10

V

= 3V

G2S

I = 10mA

8

D

f = 900MHz

6

4

Noise figure NF (dB)

2

0246810

Drain to source voltage VDS (V)

Noise Figure vs. Drain to Source Voltage

5

4

Noise Figure vs. Drain Current

5

4

3

2

Noise figure NF (dB)

1

0

4 8 12 16 20

Drain current I

V

= 3V

G2S

I

= 10mA

D

f = 60MHz

VDS = 6V V

G2S

f = 60MHz

(mA)

D

= 3V

3

2

Noise figure NF (dB)

1

0246810

Drain to source voltage V

DS

(V)

7

3SK300

Package Dimentions

2.8

0.95 0.95

3

0.4

+ 0.1 – 0.05

1.9

+ 0.3 – 0.1

Unit: mm

+ 0.1

– 0.3

+ 0.1

0.4

– 0.05

0.65

2

0.16

+ 0.1 – 0.06

0.4

+ 0.1 – 0.05

+ 0.2

– 0.6

1.5

2.8

4

0.95

1

0.85

0.6

+ 0.1 – 0.05

+ 0.1

0.65

– 0.3

0 ~ 0.1

1.8

0.3

+ 0.2

– 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4

SC–61AA

—

8

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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