Page 1
Silicon N-Channel Dual Gate MOS FET
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
Outline
3SK298
ADE-208-390
1st. Edition
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Page 2
3SK298
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
12 V
±8V
±8V
25 mA
2
Page 3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage
Gate 1 to source breakdown
V
(BR)G1SS
voltage
Gate 2 to source breakdown
V
(BR) G2SS
voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
G1SS
G2SS
DS(on)
G1S(off)
G2S(off)
Forward transfer admittance |yfs| 16 20 — mS V
Input capacitance Ciss 2.4 2.9 3.4 pF V
Output capacitance Coss 0.8 1.0 1.4 pF
Reverse transfer capacitance Crss — 0.023 0.04 pF
Power gain PG 22 25 — dB V
Noise figure NF — 1.0 1.8 dB
Power gain PG 12 15 — dB V
Noise figure NF — 3.2 4.5 dB
Noise figure NF — 2.8 3.5 dB V
Note: Marking is “ZP–”
12 — — V ID = 200 µA , V
V
= –3 V
G2S
±8— —V IG1 = ±10 µA, V
±8— —V IG2 = ±10 µA, V
——±100 nA V
——±100 nA V
0.5 — 10 mA V
0 — +1.0 V V
0 — +1.0 V V
= ±6 V, V
G1S
= ±6 V, V
G2S
= 6 V, V
DS
V
= 3 V
G2S
= 10 V, V
DS
I
= 100 µA
D
= 10 V, V
DS
I
= 100 µA
D
= 6 V, V
DS
I
= 10 mA, f = 1 kHz
D
= 6 V, V
DS
I
= 10 mA, f = 1 MHz
D
= 6 V, V
DS
I
= 10 mA, f = 200 MHz
D
= 6 V, V
DS
I
= 10 mA, f = 900 MHz
D
= 6 V, V
DS
I
= 10 mA, f = 60 MHz
D
G1S
G2S
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G1S
= 0.75V,
= 3V,
= 3V,
= 3V,
= 3V,
= 3V,
3SK298
= –3 V,
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
= VDS = 0
= 3V,
= 3V,
3
Page 4
3SK298
Maximum Channel Power
Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0 50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 to Source Voltage
20
V = 6 V
DS
Pulse test
16
3.0 V
2.5 V
2.0 V
1.5 V
20
Typical Output Characteristics
V = 3 V
G2S
1.4 V
16
D
12
8
4
Drain current I (mA)
V = 0.4 V
G1S
Pulse test
1.2 V
1.0 V
0.8 V
0.6 V
0246810
Drain to source voltage V (V)
DS
Drain Current vs. Gate2 to Source Voltage
20
V = 6 V
DS
Pulse test
16
3.0 V
2.5 V
2.0 V
1.5 V
D
12
8
4
Drain current I (mA)
0
12345
1.0 V
V = 0.5 V
G2S
Gate1 to source voltage V (V)
G1S
12
D
8
4
Drain current I (mA)
0
V = 0.5 V
G1S
12345
Gate2 to source voltage V (V)
1.0 V
G2S
4
Page 5
30
V = 6 V
DS
f = 1 kHz
fs
24
|y | (mS)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
V = 3.0 V
G2S
3SK298
Power Gain vs. Drain Current
30
24
18
12
1.5 V
6
1.0 V
0.5 V
Forward transfer admittance
0
0.4 0.8 1.2 1.6
Gate1 to source voltage V (V)
Noise Figure vs. Drain Current
3.0
2.4
V = 6 V
DS
V = 3 V
G2S
f = 200 MHz
1.8
1.2
Noise figure NF (dB)
0.6
0
12 510
Drain current I (mA)
D
2.5 V
2.0 V
G1S
2.0
20
18
12
Power gain PG (dB)
6
V = 6 V
DS
V = 3 V
G2S
f = 200 MHz
0
12 510
Drain current I (mA)
D
Power Gain vs. Drain to Source Voltage
30
24
18
12
Power gain PG (dB)
6
V = 3 V
G2S
I = 10 mA
D
f = 200 MHz
0
2468
Drain to source voltage V (V)
20
10
DS
5
Page 6
3SK298
Noise Figure vs. Drain to Source Voltage
2.0
1.6
1.2
0.8
Noise figure NF (dB)
V = 3 V
0.4
G2S
I = 10 mA
D
f = 200 MHz
0
2468
Drain to source voltage V (V)
Noise Figure vs. Drain Current
10
8
V = 6 V
DS
V = 3 V
G2S
f = 900 MHz
DS
10
Power Gain vs. Drain Current
20
16
12
8
Power gain PG (dB)
4
V = 6 V
DS
V = 3 V
G2S
f = 900 MHz
0
12 510
Drain current I (mA)
D
Power Gain vs. Drain to Source Voltage
20
16
20
6
4
Noise figure NF (dB)
2
0
12 510
Drain current I (mA)
D
20
12
8
Power gain PG (dB)
4
0
2468
Drain to source voltage V (V)
V = 3 V
G2S
I = 10 mA
D
f = 900 MHz
DS
10
6
Page 7
Noise Figure vs. Drain to Source Voltage
5
4
3
2
Noise figure NF (dB)
V = 3 V
1
0
2468
Drain to source voltage V (V)
G2S
I = 10 mA
D
f = 900 MHz
3SK298
10
DS
7
Page 8
3SK298
S11 Parameter vs. Frequency
1
.8
.6
.4
.2
0
–.2
.2
–.4
Condition:
.6
.4
–.6
1.0
.8
–.8
–1
V = 6 V , V = 3 V
DS
I = 10 mA , Zo = 50
D
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
120°
150°
180°
–150°
–120°
Condition:
50 to 1000 MHz (50 MHz step)
V = 6 V , V = 3 V
DS
I = 10 mA , Zo = 50
D
90°
–90°
1.5
1.5
234
–1.5
G2S
Scale: 0.002 / div.
2
5
–2
60°
–60°
G2S
S21 Parameter vs. Frequency
Scale: 0.5 / div.
90°
120°
3
4
5
10
10
–10
–5
–4
–3
Ω
180°
150°
–150°
–120°
Condition:
–90°
V = 6 V , V = 3 V
DS
I = 10 mA , Zo = 50
D
60°
30°
0°
–30°
–60°
G2S
Ω
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
1
Ω
30°
–30°
.8
.6
.4
.2
0°
0
–.2
.2
–.4
Condition:
.6
.4
.8
–.6
–.8
–1
V = 6 V , V = 3 V
DS
I = 10 mA , Zo = 50
D
50 to 1000 MHz (50 MHz step)
1.0
1.5
1.5
234
–1.5
G2S
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
Ω
8
Page 9
3SK298
S Parameter (VDS = 6 V, V
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
50 0.994 –5.8 2.04 173.6 0.00116 76.9 0.993 –2.2
100 0.993 –11.0 2.02 167.4 0.00132 85.7 0.993 –4.5
150 0.986 –16.8 2.00 161.5 0.00229 78.2 0.991 –6.4
200 0.980 –22.5 1.98 155.5 0.00313 73.5 0.990 –8.5
250 0.973 –27.8 1.94 149.6 0.00427 68.7 0.987 –10.5
300 0.950 –33.0 1.90 142.6 0.00473 63.9 0.985 –12.5
350 0.936 –38.3 1.86 137.1 0.00536 64.3 0.982 –14.4
400 0.924 –43.4 1.83 131.6 0.00561 64.5 0.979 –16.2
450 0.912 –48.0 1.77 126.8 0.00562 60.9 0.975 –18.2
500 0.893 –52.5 1.71 121.0 0.00640 53.5 0.971 –20.2
550 0.874 –57.3 1.67 115.5 0.00638 49.3 0.967 –22.0
600 0.859 –62.0 1.64 111.1 0.00647 49.0 0.964 –23.9
650 0.846 –66.1 1.58 106.7 0.00667 50.2 0.960 –25.8
700 0.829 –69.8 1.50 102.1 0.00694 49.3 0.955 –27.6
750 0.810 –74.2 1.46 97.1 0.00661 46.6 0.952 –29.4
800 0.802 –78.0 1.44 92.7 0.00618 43.7 0.948 –31.2
850 0.791 –81.6 1.38 88.9 0.00622 44.7 0.944 –33.2
900 0.778 –84.6 1.34 84.2 0.00615 43.6 0.940 –35.1
950 0.756 –88.5 1.30 80.2 0.00576 45.1 0.935 –36.8
1000 0.751 –92.2 1.26 75.9 0.00562 40.7 0.932 –38.5
= 3 V, ID = 10 mA, ZO = 50 )
G2S
9
Page 10
0.4
+ 0.1
– 0.05
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.4
+ 0.1
– 0.05
0.65
0.16
+ 0.1
– 0.06
Unit: mm
0.4
+ 0.1
– 0.05
0.95
1.8 ± 0.2
0.85
0.6
+ 0.1
– 0.05
0.3
+ 0.2
1.1
1.5 ± 0.15
0.65
– 0.1
+ 0.2
– 0.6
2.8
Hitachi Code
JEDEC
EIAJ
Weight
0 – 0.1
(reference value)
MPAK-4
—
Conforms
0.013 g
Page 11
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