Datasheet 3SK252-T2, 3SK252-T1, 3SK252 Datasheet (NEC)

©

1993

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK252

FEATURES

• Low VDD Use : (VDS = 3.5 V)

• Driving Battery

• Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)

• High Power Gain : G

PS = 19.0 dB TYP. (f = 470 MHz)

• Suitable for use as RF amplifier in CATV tuner.

• Automatically Mounting : Embossed Type Taping

• Package : 4 Pins Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage V

G1S ±8

*1

V

Gate2 to Source Voltage VG2S ±8

*1

V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage V

G2D 18 V

Drain Current ID 25 mA
Total Power Dissipation PD 200

*2

mW

Channel Temperature T

ch 125 °C

Storage Temperature Tstg –55 to +125 °C

*1: R

L ≥ 10 kΩ

*2: Free air

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

RF AMPLIFIER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

0.16

0.1

0.05

5˚ 5˚

0.4

0.4

0.1

0.05

2.8

0.2

0.3

1.5

0.2

0.1

+

–

+
–

+
–

0.1

0.05

+

–

3

2

2.9 ± 0.2

(1.8)

0.85 0.95

(1.9)

4

1

0.4

0.6

0.1

0.05

+

–

0.1

0.05

+

–

1.1

0.2

0.1

+

–

0.8

5˚ 5˚

0

~

0.1

+

–

PACKAGE DIMENSIONS

(Unit: mm)

PIN CONNECTIONS

1. Source

2. Drain

3. Gate2

4. Gate1

Document No. P10582EJ2V0DS00 (2nd edition)
(Previous No. TD-2373)
Date Published August 1995 P
Printed in Japan

3SK252

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA

Drain Current IDSX 0.1 5.0 mA

VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
Gate1 to Source Cutoff Voltage VG1S(off) –1.0 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) 0 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V

Forward Transfer Admittance |yfs|141823mS

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 kHz
Input Capacitance Ciss 2.4 2.9 3.4 pF

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Output Capacitance Coss 0.9 1.2 1.5 pF

f = 1 MHz
Reverse Transfer Capacitance Crss 0.01 0.03 pF

Power Gain Gps 16 19 22 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure 1 NF1 2.0 3.0 dB

f = 470 MHz

Noise Figure 2 NF2 0.8 2.3 dB

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 55 MHz

IDSX Classification

Rank U1E/UAE*
Marking U1E
IDSX (mA) 0.1 to 5.0 * Old Specification / New Specification

3SK252

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

– Drain to Source Voltage – V

I

D

– Drain Current – mA

DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

I

D

– Drain Current – mA

0

FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

|y

fs

| – Forward Transfer Admittance – mS

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

I

D

– Drain Current – mA

|y

fs

| – Forward Transfer Admittance – mS

INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

iss

– Input Capacitance – pF

V

G2S

= 3 V

V

G1S

= 1.6 V

0

5

10

15

20

25

510

V

DS

= 3.5 V

V

G2S

= 3.5 V

5

10

15

20

25

0.5 1.0 1.5 2.0 2.5

V

DS

= 3.5 V

f = 1 kHz

0

8

16

24

32

40

0.5 1.0 1.5 2.0 2.5

V

DS

= 3.5 V

f = 1 kHz

0

8

16

24

32

40

V

G2S

= 3.5 V

3.0 V

2.5 V

1.5 V

1.0 V

I

D

= 7 mA

(at V

DS

= 3.5 V,

V

G2S

= 3 V)

f = 1 MHz

–1.0 0 1.0 2.0 3.0 4.0

1.0

2.0

3.0

4.0

3.0 V

2.5 V

2.0 V

1.5 V1.0 V

V

G2S

= 3.5 V

2.0 V

5.0

0

1.4 V

1.2 V

1.0 V

0.8 V

0.6 V

3.0 V

2.5 V

2.0 V

1.5 V

1.0 V

4 8 12 16 20

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

T

A

– Ambient Temperature – °C

P

D

– Total Power Dissipation – mW

0

100

25 50 75 100 125

200

300

400

3SK252

4

ID = 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 1 MHz

OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

oss

– Output Capacitance – pF

–1.0

POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

G

PS

– Power Gain – dB

00 1.0 2.0 3.0 4.0

–1.0

–20

1.0 2.0 3.0 4.0

0

0.5

1.0

1.5

2.0

2.5

NF – Noise Figure – dB

–10

0

10

20

I

D

= 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 470 MHz

G

PS

NF

10

5

0

ID = 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 1 MHz

3SK252

5

GPS AND NF TEST CIRCUIT AT f = 470 MHz

L1 : 1.2 mm U.E.W 5 mm 1T
L

2

: 1.2 mm U.E.W 5 mm 1T

L

3

: REC 2.2 H

V

G2S

22 kΩ

Ferrite Beads

50 Ω

15 pF

V

G1S

1 000 pF

1 000 pF

22 kΩ

1 000 pF

INPUT

50 Ω

15 pF

1 000 pF

40 pF

L

1

1 000 pF 1 000 pF

V

DS

L

2

L

3

40 pF

φ

µ

φ

φ
φ

OUTPUT

NF TEST CIRCUIT AT f = 55 MHz

V

G2S

V

DS

2.2 kΩ

RFC

50 Ω

3.3 kΩ

1 500 pF

27 pF

1 000 pF

1 000 pF

1 500 pF

47 kΩ

27 pF

INPUT

50 Ω

47 kΩ

3.3
kΩ

V

G1S

Ferrite Beads

OUTPUT

2

3SK252

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11