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3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163 -40V
3N164 -30V
Transient G-S Voltage (NOTE 1) ±125V
Drain Current 50mA
Storage Temperature -65°C to +200°C
Power Dissipation 375mW
MOSFET
D
G Case
18 X 30 MILS TO-72
S
Bottom View
G
D
Case
3
2
4
1
S
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS 3N163 3N164 UNITS CONDITIONS
MIN MAX MIN MAX
I
GSSF
BV
DSS
BV
SDS
V
GS(th)
V
GS(th)
V
GS
I
DSS
I
SDS
r
DS(on)
I
D(on)
g
fs
g
os
C
iss
C
rss
C
oss
Gate Forward Current -10 -10 pA VGS=-40V VDS=0 (3N163)
TA=+125°C -25 -25 VGS=-30V VDS=0 (3N164)
Drain-Source Breakdown Voltage -40 -30 ID=-10µAV
Source-Drain Breakdown Voltage -40 -30 V IS=-10µAV
Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=V
Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=-15V ID=-10µA
Gate Source Voltage -3.0 -6.5 -3.0 -6.5 VDS=-15V ID=-0.5mA
Zero Gate Voltage Drain Current 200 400 pA VDS=-15V VGS=0
Source Drain Current 400 800 VDS=15V VGS=VDB=0
Drain-Source on Resistance 250 300 ohms VGS=-20V ID=-100µA
On Drain Current -5.0 -30 -3.0 -30 mA VDS=-15V VGS=-10V
Forward Transconductance 2000 4000 1000 4000 µsVDS=-15V ID=-10mA f=1kHz
Output Admittance 250 250
Input Capacitance-Output Shorted 2.5 2.5 pF VDS=-15V ID=-10mA f=1MHz
Reverse Transfer Capacitance 0.7 0.7 (NOTE 2)
Output Capacitance Input Shorted 3.0 3.0
GS
=0
GS
=0 VBD=0
GD
ID=-10µA
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted)
SYMBOL CHARACTERISTICS 3N163 3N164 UNITS CONDITIONS
MIN MAX MIN MAX
t
on
t
r
t
off
Turn-On Delay Time 12 12 ns VDD=-15V
Rise Time 24 24 I
=-10mA (NOTE 2)
D(on)
Turn-Off Time 50 50 RG=RL=1.4KΩ
TYPICAL SWITCHING WAVEFORM
V
DD
10%
10%
50
R
1
t
R
2
V
OUT
on
Ω
t
r
INPUT PULSE
Rise Time 2ns
≤
Pulse Width 200ns
Switching Times Test Circuit
Switching Times Test Circuit
NOTES:
1. Devices must not be tested at ±125V more than once, nor for longer than 300ms.
2. For design reference only, not 100% tested.
10%
≥
90%
10%
t
off
SAMPLING SCOPE
≤
T 0.2ns
r
C 2pF
≤
IN
≥
R 10M
IN
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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