Datasheet 3LN01SS Specification

Ordering number : EN6546C

3LN01SS

N-Channel Small Signal MOSFET

30V, 0.15A, 3.7Ω, Single SSFP

Features

• Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Specifi cations

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

Machine Model

*

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

at Ta=25°C

DSS

GSS
D
DP

D

PW≤10μs, duty cycle≤1% 0.6 A

http://onsemi.com

30 V

±10 V

0.15 A

0.15 W

Package Dimensions

unit : mm (typ)
7029A-003

1.4

0.25

3

0.8

1.4

1

0.3 0.3

0.45

0.6

0.070.07

2

0.2

12

3

0.1

0 to 0.02

1 : Gate
2 : Source
3 : Drain

SSFP

3LN01SS-TL-E
3LN01SS-TL-H

Ordering & Package Information

Device Package Shipping memo

3LN01SS-TL-E

3LN01SS-TL-H

SSFP

SC-81

SSFP

SC-81

8,000

pcs./reel

8,000

pcs./reel

Packing Type: TL Marking

LOT No.

YA

TL

Electrical Connection

3

1

Pb-Free

Pb-Free

and

Halogen Free

LOT No.

Semiconductor Components Industries, LLC, 2013

June, 2013

61213 TKIM TC-00002938/62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986 No.6546-1/6

2

3LN01SS

Electrical Characteristics

Parameter Symbol Conditions

Drain to Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=100μA 0.4 1.3 V
Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage

at T a=25°C

Ratings

min typ max

(BR)DSSID
DSS
GSS

yfs

|

|

RDS(on)1 ID=80mA, VGS=4V 2.9 3.7
RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8
Ciss
Coss 5.9 pF
Crss 2.3 pF
td(on)
tr 65 ns
td(off) 155 ns
t

f

Qg
Qgs 0.26 nC
Qgd 0.31 nC
V

SD

=1mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
VGS=±8V, VDS=0V ±10

VDS=10V, ID=80mA 0.15 0.22 S

7.0 pF

VDS=10V, f=1MHz

19 ns

See specifi ed Test Circuit.

120 ns

1.58 nC

VDS=10V, VGS=10V, ID=150mA

IS=150mA, VGS=0V 0.87 1.2 V

Switching Time Test Circuit

Unit

μ

μ

Ω

Ω

Ω

A
A

4V
0V

PW=10μs
D.C.≤1%

P.G

V

IN

VDD=15V

V

IN

G

50Ω

ID=80mA
RL=187.5Ω

D

S

V

OUT

3LN01SS

No.6546-2/6

3LN01SS

0.16

0.14

0.12

-- A

0.10

D

0.08

0.06

Drain Current, I

0.04

0.02

0

0

10

9

8

7

(on) -- Ω

DS

6

5

4

ID=40mA

3

ID -- V

DS

3.5V

4.0V

3.0V

2.5V

6.0V

0.2

0.4

0.6 0.8 1.0

Drain to Source Voltage, VDS -- V

RDS(on) -- V

GS

80mA

2.0V

VGS=1.5V

ID -- V

0.30

VDS=10V

0.25

GS

C

°

Ta= --25

0.20

-- A
D

0.15

0.10

Drain Current, I

0.05

0

0

IT00029 IT00030

Ta=25°C

10

7

5

(on) -- Ω

25°C

0.5 1.0 1.5 2.0

Gate to Source Voltage, VGS -- V

DS

3

C

°

C

°

Ta=75

--25

RDS(on) -- I

Ta=75°C

25°C

75°C

2.5 3.0

D

VGS=4V

--25°C

2

25°C

Static Drain to Source

On-State Resistance, R

0012134256

Gate to Source Voltage, VGS -- V

10

7

(on) -- Ω

5

RDS(on) -- I

DS

3

2

Static Drain to Source

On-State Resistance, R

1.0

0.01 0.1

7

6

5

(on) -- Ω

23 57 23

Drain Current, ID -- A

RDS(on) -- Ta

DS

4

3

Static Drain to Source

On-State Resistance, R

--600--40 --201020240 60

=40mA, V

I

D

I

D

Ambient Temperature, Ta -- °C

Ta=75°C

25°C

--25°C

=80mA, V

78910

D

=2.5V

GS

=4.0V

GS

80 100 120 140 160

Static Drain to Source

On-State Resistance, R

1.0

IT00031 IT00032

VGS=2.5V

5

IT00033 IT00034

0.01 0.1

100

7
5

3

(on) -- Ω

2

DS

10

7
5

3

Static Drain to Source

On-State Resistance, R

2

1.0

0.001

1.0
7
5

3
2

0.1
7
5

3
2

23 57 23

Drain Current, ID -- A

RDS(on) -- I

D

Ta=75°C

--25°C
25°C

23 57 23

Drain Current, ID -- A

| yfs | -- I

C

°

0.01

D

Ta= --25

C

°

75

25°C

Forward Transfer Admittance, | yfs | -- S

0.01

IT00035 IT00036

0.01

23 57 23

0.1

Drain Current, ID -- A

5

VGS=1.5V

5

VDS=10V

5

No.6546-3/6

1.0
7
5

3

-- A

2

S

0.1
7

5

Source Current, I

3
2

I

S

Ta=75

C

°

25°C

-- V

--25°C

SD

VGS=0V

3LN01SS

Switching Time, SW Time -- ns

1000

100

SW Time -- I

7
5

3
2

7
5

3
2

td(off)

t

f

td(on)

t

r

D

VDD=15V
VGS=4V

0.01

0.60.5 0.80.7 0.9 1.0 1.1 1.2

Diode Forward Voltage, VSD -- V

100

7
5

3
2

10

7
5

Ciss, Coss, Crss -- pF

3
2

1.0

0 2 4 6 8 10 12 14 16 18 20

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

DS

Drain to Source Voltage, VDS -- V

P

-- Ta

0.2

-- W
D

0.15

D

10

IT00037 IT00038

f=1MHz

IT00039 IT00040

0.01

10

VDS=10V

9

ID=150mA

8

-- V

7

GS

6

5

4

3

2

Gate to Source Voltage, V

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

23 57 2

0.1

Drain Current, ID -- A

VGS -- Qg

Total Gate Charge, Qg -- nC

0.1

0.05

Allowable Power Dissipation, P

0

0 20 40 60 100 120 140

80

Ambient Temperature, Ta -- °C

160

IT01964

No.6546-4/6

3LN01SS

Outline Drawing Land Pattern Example

3LN01SS-TL-E, 3LN01SS-TL-H

Mass (g) Unit

0.0018

* For reference

mm

1.2

0.45

0.45 0.45

Unit: mm

0.5

0.5

0.45

No.6546-5/6

3LN01SS

Note on usage : Since the 3LN01SS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.

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PS No.6546-6/6