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3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Excellent clamping capability
l Typical ID less than 1A above 11V
l High temperature soldering :
260/10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
DO-15
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range TJ,T
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
SYMBOL VALUE UNITS
PD 3
I
15 Amps
FSM
-55 to +150
STG
24
Watts
mW/
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3EZ11 THRU 3EZ200
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) VF=1.2 V max , IF=500 mA for all types
Type No.
(Note 1.)
3EZ11
3EZ12
3EZ13
3EZ14
3EZ15
3EZ16
3EZ17
3EZ18
3EZ19
3EZ20
3EZ22
3EZ24
3EZ27
3EZ28
3EZ30
3EZ33
3EZ36
3EZ39
3EZ43
3EZ47
3EZ51
3EZ56
3EZ62
3EZ68
3EZ75
3EZ82
3EZ91
3EZ100
3EZ110
3EZ120
3EZ130
3EZ140
3EZ150
3EZ160
3EZ170
3EZ180
3EZ190
3EZ200
Nominal Zener
Voltage Vz @ I
volts
(Note 2.)
11
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
140
150
160
170
180
190
200
ZT
Test
current
IZT
mA
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
17
16
15
13
12
11
10
9.1
8.2
7.5
6.8
6.3
5.8
5.3
5
4.7
4.4
4.2
4
3.7
Maximum Zener Impedance (Note 3.)
ZZT @ IZT
Ohms
4
4.5
4.5
5
5.5
5.5
6
6
7
7
8
9
10
12
16
20
22
28
33
38
45
50
55
70
85
95
115
160
225
300
375
475
550
625
650
700
800
875
ZZk @ IZK
Ohms
700
700
700
700
700
700
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
5000
6000
6500
7000
7000
8000
8000
IZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
IR
A Max
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
NOTES:
@
VR
Volts
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
62.2
69.2
76
83.6
91.2
98.8
106.4
114
121.6
130.4
136.8
144.8
152
Maximum Zener
Current
I
ZM
Madc
225
246
208
193
180
169
150
159
142
135
123
112
100
96
90
82
75
69
63
57
53
48
44
40
36
33
30
27
25
22
21
19
18
17
16
15
14
13
Surge Current
@ TA = 25
ir - mA
(Note 4.)
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1
0.91
0.83
0.74
0.71
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.2
0.18
0.16
0.15
0.14
0.13
0.12
0.12
0.11
0.1
0.1
1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms±10ms
from the diode body, and an ambient temperature of 25 (8, -2).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is
superimposed on IZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.
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RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
Fig. 2-TYPICAL THERMAL RESPONSE L
Fig. 3-MAXIMUM SURGE POWER Fig. 4-TYPICAL REVERSE LEAKAGE
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LAPD + TA
LA is the lead-to-ambient thermal resistance (/W)
and PD is the power dissipation. The value for LA will
vary and depends on the device mounting method.
LA is generally 30-40/W for the various chips and
tie points in common use and for printed circuit board
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible
to the tie point. The thermal mass connected to the tie
point is normally large enough so that it will not
significantly respond to heat surges generated in the
diode as a result of pulsed operation once steady-state
conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
TJ = TL + TJL
TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
wiring.
T
JL
= LAPD
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For worst-case design, using expected limits of Iz, limits
excursions as low as possible.
of PD and the extremes of TJ (TJL ) may be estimated.
Data of Figure 2 should not be used to compute surge
Changes in voltage, Vz, can then be found from:
V =
VZ TJ
VZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
TEMPERATURE COEFFICIENT REAGES
(90% of the Units are int he Ranges Indicated)
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of Figure
3 be exceeded.
Fig. 5-UNITS TO 12 VOLTS Fig. 6-UNITS 10 TO 200 VOLTS
Fig. 7-VZ = 3.9 THRU 10 VOLTS Fig. 8- VZ = 12 THRU 82 VOLTS
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Fig. 9-VZ = 100 THRU 200 VOLTS Fig. 10-TYPICAL THERMAL RESISTANCE
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