Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 3DD200
DESCRIPTION
·With TO-3 package
·High collector-base breakdown voltage
=250V
: V
CBO
APPLICATIONS
·For TV horizontal output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
PC Collector power dissipation TC=75℃ 30 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 250 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 6 V
℃)
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 1.5 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 3DD200
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V
Collector-base breakdown voltage IC=1mA ;IE=0 250 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V
Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V
Collector cut-off current VCB=250V; IE=0 0.5 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gai n IC=2A ; VCE=5V 30 120
tf Fall time IC=3A; IB1=0.2A; IB2=-0.3A 1
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 3DD200
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...