Page 1
3
Base
1
Emitter
2
1111
Emitter
Millimeter
A
CE
F
D
G
H
J
B
FEATURES
Power switching applications
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
RoHS Compliant Product
Collector
3DD13003B
1.5A , 700V
NPN Plastic-Encapsulated Transistor
TO-92
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 J 2.42 2.66
K 0.36 0.76
2
2Collector
22
3
3Base
33
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 1.5 A
Collector Power Dissipation PC 900 mW
Junction, Storage Temperature TJ, T
(TA=25°C unless otherwise specified)
700 V
CBO
400 V
CEO
9 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut – Off Current
Emitter Cut – Off Current I
DC Current Gain h
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage V
Transition Frequency fT 4 - - MHz VCE=10V, IC=100mA, f =1MHz
Storage time tS - - 4 µs IB1= -IB2=0.2A
Fall time tF - - 0.7 µs IC=1A
(TA=25°C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO
I
CEO
EBO
FE
V
CE(sat)1
V
CE(sat)2
BE(sat)
700 - - V IC=1mA, IE=0
400 - - V IC=10mA, IB=0
9 - - V IE=1mA, IC=0
- - 100
50 VCE=400V, IB=0
- - 10 µA VEB=7V, IC=0
20 - 30 VCE=10V, IC=400mA
- - 3
- - 0.8 IC=0.5A, IB=100mA
- - 1 V IC=0.5A, IB=100mA
VCB=700V, IE=0
µA
IC=1.5A, IB=500mA
V
Test Condition
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jun-2011 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
3DD13003B
1.5A , 700V
NPN Plastic-Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
15-Jun-2011 Rev. A Page 2 of 2
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