Page 1
3DD13002B
Switch Mode NPN Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T =25 C
Junction Temperature
Storage, Temperature
A
(Ta=25 C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
j
Tstg
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Value
400
600
6.0
1.0
1.0
150
-55 to +150
1
2
3
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 600 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0V c, I =0)
d
C
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V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
400
600
6.0
-
-
-
-
-
100
100
Vdc
Vdc
Vdc
uAdc
uAdc
Page 2
3DD13002B
WE ITR ON
Electrical Characteristics (T
Characteristics
On Characteristics
DC Current Gain
(IC= 100 mAdc, VCE=10Vdc)
(IC= 200 mAdc, VCE= 10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Base-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
=25 C unless otherwise noted) (Countinued)
A
Symbol
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Min
20
9
6
-
-
5.0
Max
25
40
.
0.8
1.1
-
Unit
-
-
-
Vdc
Vdc
MHz
Switching Characteristics
Storage Time
Fall Time
Classification of h
Rank
Range
FE(2)
9-15 15-20 20-25 25-30 30-35 35-40
V =100V, I =1A
CC
I =-I =200mA
B1 B2
C
t
s
t
f
-
-
2.5
0.5
us
us
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Page 3
3DD13002B
WE IT R ON
80
60
40
30
25 C
V =2V
CE
1.6
1.2
2
T =25 C
J
I =0.2A
C
20
0.8
10
8
FE
6
h ,DC CURRENT GAIN
4
0.02
0.05 0.1 0.7 2
0.03 0.2 0.5 1 2
0.07 0.3
I , COLLECTOR CURRENT(AMP)
C
FIG.1 DC Current Gain
1.4
1.2
V @I /I =5
BE(sat)
1
C
B
0.4
0
0.0050.002
0.01 0.02 0.05
I , BASE CURRENT(AMP)
CE
V ,COLLECTOR-EMITTER VOLTAGE(V)
FIG.2 Collector Saturation Region
B
0.1 0.2 0.5 1
3.5
3.0
2.5
I /I =5
C B
2.0
0.8
V, VOLTAGE(V)
25 C
0.6
0.4 0
0.03 0.1 0.70.07 20.02 0.05 0.30.2 0.5 1
I , COLLECTOR CURRENT(AMP)
C
FIG.3 Base-Emitter Voltage
10
5
2
1
0.5
0.2
T =25 C
C
0.1
0.0
5
0.02
C
I , COLLECTOR CURRENT(AMP)
0.01
5
10 500
20 50 100 200
V ,COLLECTOR-EMITTER VOLTAGE(V)
CE
300
FIG.5 Active Region Safe Operation Area
1.5
1.0
V, VOLTAGE(V)
0.5
0.01
0.1 20.5 1
I , COLLECTOR CURRENT(AMP)
C
FIG.4 Collector-Emitter Saturation Region
1.6
1.2
_
<
T 100 C
0.8
0.4
C
0
I , COLLECTOR CURRENT(AMP)
J
I =1A
B1
V =6V
BE(off)
5V
3V
1.5V
100 300
0
V ,COLLECTOR-EMITTER CLAMP VOLTAGE(V)
CE
200 400 600
500 700
FIG.6 Reverse Bias Safe Operating Area
800
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Page 4
3DD13002B
WE IT R ON
1
0.8
0.6
THERMAL
0.4
0.2
POWER DERATING FACTOR
0
20
FIG.7 Forward Bias Power Derating
DERATING
60 100 14080
40 120 160
T , CASE TEMPERATURE( C)
C
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Page 5
3DD13002B
TO-92 Outline Dimensions unit:mm
E
H
C
L
J
K
G
B
A
D
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
2.44
14.10
Max
3.70
1.40
0.55
0.51
4.70
-
4.70
1.270TYP
2.64
14.50
TO-92
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