
Elektronische Bauelemente
FEATURES
Power switching applications
CLASSIFICATION OF h
Product-Rank 3DD13001-A 3DD13001-B
Range 17~23 20~26
FE(1)
3DD13001
0.2A , 600V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
REF.
Collector
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 0.2 A
Collector Power Dissipation PC 750 mW
Junction, Storage Temperature TJ, T
(TA=25°C unless otherwise specified)
600 V
CBO
400 V
CEO
7 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
2
2Collector
22
3
3Emitter
33
REF.
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut – Off Current
Emitter Cut – Off Current I
DC Current Gain
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage V
(BR)CBO
(BR)CEO
(BR)EBO
I
CBO
I
CEO
EBO
h
FE (1)
h
FE (2)
CE(sat)
BE(sat)
600 - - V IC=0.1mA, IE=0
400 - - V IC=1mA, IB=0
7 - - V IE=0.1mA, IC=0
- - 100
- - 200 VCE=400V, IB=0
VCB=600V, IE=0
µA
- - 100 µA VEB=7V, IC=0
17 - 26
5 - - VCE=10V, IC=0.25mA
VCE=20V, IC=20mA
- - 0.5 V IC=50mA, IB=10mA
- - 1.2 V IC=50mA, IB=10mA
Test Condition
Transition Frequency fT 8 - - MHz VCE=20V, IC=20mA, f =1MHz
Fall time tF - - 0.3 µs
Storage time tS - - 1.5 µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A Page 1 of 2
IB1= -IB2=5mA
VCC=45V, IC=50mA

Elektronische Bauelemente
CHARACTERISTIC CURVES
3DD13001
0.2A , 600V
NPN Plastic-Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A Page 2 of 2