Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 3CD6D
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For power amplifier and low speed
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter -110 V
Collector-emitter voltage Open base -110 V
Emitter-base voltage Open collector -4 V
T
=75℃
C
50 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 3CD6D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -110 V
Emitter-base breakdown voltage IE=-1mA ;IB=0 -4 V
Collector-emitter saturation voltage IC=-2.5A; IB=-0.5A -1.0 -1.5 V
Base-emitter saturation voltage IC=-2.5A; IB=-0.5A -2.0 V
Collector cut-off current VCB=-110V; IE=0 -0.1 mA
Collector cut-off current VCE=-110V; IE=0 -1.0 mA
Emitter cut-off current VEB=-4V; IC=0 -0.1 mA
hFE DC current gai n IC=-2.5A ; VCE=-10V 10 180
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 3CD6D
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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