Datasheet 300UR20Α Specification

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Standard Recovery Diodes,

DO-9 (DO-205AB)

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-9 (DO-205AB)

Circuit configuration Single

(Stud Version), 300 A

FEATURES

• Alloy diode

• Popular series for rough service

• Stud cathode and stud anode version

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Welders

300 A

• Power supplies

• Motor controls

• Battery chargers

• General industrial current rectification

VS-300U(R) Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

FSM

2

I

V

T

t

RRM

J

T

C

50 Hz 6550

60 Hz 6850

50 Hz 214

60 Hz 195

Range 400 V

300 A

150 °C

-65 to +200 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

,

RSM

REVERSE VOLTAGE

V

I

MAXIMUM

RRM

AT T

TYPE NUMBER

VS-300U(R)..

,

V

VOLTAGE

CODE

10 100 200

20 200 300

30 300 400

40 400 500

60 600 700

MAXIMUM REPETITIVE PEAK

REVERSE VOLTAGE

RRM

V

MAXIMUM NON-REPETITIVE PEAK

A

kA2s

= 175 °C

J

mA

40

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VS-300U(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum peak, one cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2140 kA2s

Maximum value of threshold voltage V
Maximum value of forward 

slope resistance

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)

r

FM

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 6850

t = 10 ms

t = 8.3 ms 5750

t = 10 ms

t = 8.3 ms 195

t = 10 ms

t = 8.3 ms 138

TJ = 200 °C

f

No voltage 
reapplied

100 % V
reapplied

RRM

No voltage 
reapplied

100 % V
reapplied

RRM

Sinusoidal half wave,
initial T

Ipk = 942 A, TJ = 25 °C 1.40 V

Vishay Semiconductors

300 A

130 °C

6550

5500

= TJ maximum

J

214

151

0.610 V

0.751 m

kA

A

2

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and
storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Maximum allowed mounting torque
+0 -20 %

Approximate weight 250 g

Case style (JEDEC

Note

(1)

302U-A uses case style B-26

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.020 0.015

120° 0.024 0.025

90° 0.031 0.034

60° 0.045 0.047

30° 0.077 0.077

Note

• The table above shows the increment of thermal resistance R

T

, T

J

Stg

R

thJC

R

thCS

DC operation 0.18

Mounting surface, smooth, flat and greased 0.08

-65 to +200 °C

Not lubricated threads 37

Lubricated threads 28

®

) see dimensions - link at the end of datasheet DO-9 (DO-205AB)

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

K/W

Nm

(1)

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Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

120

140

160

180

200

0 50 100 150 200 250 300 350

30°

60°

90°

120°

180°

Conduction Angle

300U40AM20
RthJC (DC) = 0.18 K/W

0

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

50 75 100 125 150 175 200

3 K/W

1.5 K/W

1 K/W

0.7 K/W

0.3 K/W

0.2 K/W

0.5 K/W

RthSA = 0.1 K/W - ΔR

0

50

100

150

200

250

300

350

400

450

500

0 100 200 300 400 50

0

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

Tj = 200°C

300U40AM20

VS-300U(R) Series

Vishay Semiconductors

200

190

300U40AM20
RthJC (DC) = 0.18 K/W

180

170

160

Conduction Period

150

140

130

120

110

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

DC

0 100 200 300 400 500

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

400

350

300

250

200

150

100

50

180°
120°

90°
60°
30°

RMS Limit

Conduction Angle

300U40AM20
Tj = 200°C

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

3 K/W

RthSA = 0.1 K/W - Delta R

0

0 50 100 150 200 250 300 350

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

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Fig. 4 - Forward Power Loss Characteristics

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VS-300U(R) Series

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

11010

0

Initial Tj = 200°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

300U40AM20

Pulse Train Duration (s)

Peak Half Sine Wave Forward Current (A)

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

6500

7000

0.01 0.1 1

Maximum Non Repetitive Surge Current

Initial Tj = 200°C

No Voltage Reapplied

Rated Vrrm Reapplied

Versus Pulse Train Duration.

300U40AM20

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

10

100

1000

10000

0 0.5 1 1.5 2 2.5 3

Tj = 25°C

Tj = 200°C

300U40AM20

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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Vishay Semiconductors

1

(K/W)

thJC

0.1

0.01

Transient Thermal Impedance Z

0.001

0.0001 0.001 0.01 0.1 1 10

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Fig. 7 - Forward Voltage Drop Characteristics

Steady State Value

RthJC = 0.18 K/W
(DC Operation)

Fig. 8 - Thermal Impedance Z

300U40AM20

Square Wave Pulse Duration (s)

Characteristic

thJC

4

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Device code

5 761 32 4

30VS- 0 U 40 A M20

2

- 0 = standard device
2 = 300U top threaded version

- • U = stud normal polarity (cathode to stud)

• UR = stud reverse polarity (anode to stud)

4

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

5

6

- A = essential part number

- 30 = essential part number

1

- Vishay Semiconductors product

3

7

- None = stud base DO-9 (DO-205AB) 3/4

" 16UNF-2A

M20 = Metric device M20 x 1.5 (available with standard device only)

ORDERING INFORMATION TABLE

VS-300U(R) Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95340

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Outline Dimensions

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Vishay Semiconductors

DO-9 (DO-205AB) and B-26 for 300U(R) Series

DIMENSIONS FOR 300U(R)-A SERIES - DO-9 (DO-205AB) in millimeters (inches)

149.9 (5.90)

134.6 (5.30)

53.34 (2.10)
Max.

3.18 (0.125)
Max.

Unthreaded

portion

11.51 (0.453)

10.74 (0.423)

21.03 (0.83)

20.14 (0.79)

for metric device: M20 x 1.5

19.18 (0.755)
Max.

Ø 19.02 (0.749)

3/4" 16UNF-2A

contact factory

Ø 8.89 (0.350)
Ø 8.38 (0.330)

Ø 27.94 (1.10)

Max.

9.27 (0.365)

7.87 (0.310)

31.75 (1.250)

30.94 (1.218)

Max.

4.32 (0.170)

Ma

Across ats

x.

13.46 (0.530)

11.94 (0.470)

DIMENSIONS FOR 302U(R)-A SERIES - B-26 in millimeters (inches)

3/8"-24UNF-2A

16.51 (0.65)

14.99 (0.59)

58.67 (2.31)

55.63 (2.19)

3.18 (0.125)
Max.

28.45 (1.12)
Max.

21.03 (0.828)

20.14 (0.793)

3/4" 16UNF-2A

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Ø 9.50 (0.374)

Max.

18.29 (0.72)

16.76 (0.66)

Ø 19.02 (0.749)

Max.

Across ats

Ø 27.94 (1.10)

Max.

9.27 (0.365)

7.87 (0.310)

31.75 (1.250) Max.
Across ats

Document Number: 95340

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