Page 1
Features
2STA2510
High power PNP epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STC2510
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= -100 V
Application
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STA2510 2STA2510 TO-3P Tube
November 2008 Rev 3 1/8
www.st.com
A8
Page 2
Electrical ratings 2STA2510
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
P
CBO
CEO
EBO
I
I
CM
TOT
T
T
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current -25 A
C
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
J
-100 V
-100 V
-6 V
-50 A
125 W
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ____ __max 1 °C/W
2/8
Page 3
2STA2510 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE
h
FE
f
T
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5 %
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Coll ector-em itter bre akdown
(1)
voltage (I
= 0)
B
Collector-base breakdown
voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter saturation
(1)
= 0)
E
= 0)
C
voltage
(1)
Base-emitter voltage
DC current gain
Transition frequency
V
CB
V
EB
I
C
I
C
I
E
I
C
V
CE
I
C
I
C
= -100 V
= -6 V
= -50 mA
= -100 µA
= -1 mA
= -12 A IB = -1.2 A
= -4 V IC = -12 A
= -12 A V
= -0.5 A V
CE
CE
= -4 V
= -12 V
-10 µA
-10 µA
-100 V
-100 V
-6 V
-1.5 V
-1.8 V
40 80
20 MHz
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Page 4
Electrical characteristics 2STA2510
2.1 Electrical characteristic (curves)
Figure 2. Safe operating area
Figure 3. Derating curve
Figure 4. Output characteristics
Figure 6. Collector-emitter saturation
voltage
Figure 5. DC current gain
Figure 7. Collector current vs base-
emitter voltage
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Page 5
2STA2510 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
5/8
Page 6
Package mechanical data 2STA2510
TO-3P Mechanical data
DIM.
A4.6 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0 .60 0 .75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L19.50 20 20.50
L1 3 .50
L2 18.20 18.40 18.60
P 3.10 3.30
Q5
Q1 3. 80
MIN. TYP MAX.
mm.
6/8
Page 7
2STA2510 Revision history
4 Revision history
Table 5. Document revision history
Date Revision Changes
26-Nov-2007 1 Initial release
16-May-2008 2 Document status promoted from preliminary data to datasheet.
14-Nov-2008 3 Added paragraph: Electrical characteristic (curves) on page 4.
7/8
Page 8
2STA2510
y
y
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