Datasheet 2sk982 DATASHEETS

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK982
2SK982
High Speed Switching Applications Analog Switch Applications Interface Applications
· Excellent switching times: t
· High forward transfer admittance: |Y
@ID = 50 mA
· Low on resistance: R
· Enhancement-mode
· Complementary to 2SJ148
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V Gate-source voltage V
Drain current
Drain power dissipation (Ta = 25°C) Channel temperature Tch 150 °C Storage temperature range T
DS (ON)
(Ta ==== 25°C)
DC ID 200 Pulse I
= 14 ns (typ.)
on
| = 100 mS (min)
fs
= 0.6 Ω (typ.) @ ID = 50 mA
DS
±20 V
GSS
800
DP
400 mW
P
D
stg
60 V
-55~150 °C
mA
Unit: mm
JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1H
Weight: 0.21 g (typ.)
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2SK982
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I Drain cut-off current I Drain-source breakdown voltage V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2 ¾ 3.5 V Forward transfer admittance ïYfsï VDS = 10 V, ID = 50 mA 100 ¾ ¾ mS Drain-source ON resistance R Drain-source ON voltage V Input capacitance C Reverse transfer capacitance C Output capacitance C
Rise time
Turn-on time
Switching time
Fall time
Turn-off Time
(Ta ==== 25°C)
(BR) DSSID
DS (ON) DS (ON)
VGS = ±10 V, VDS = 0 ¾ ¾ ±100 nA
GSS
VDS = 60 V, VGS = 0 ¾ ¾ 10 mA
DSS
= 1 mA, VGS = 0 60 ¾ ¾ V
ID = 50 mA, VGS = 10 V ¾ 0.6 1.0 W ID = 50 mA, VGS = 10 V ¾ 30 50 mV
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 55 65 pF
iss
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 13 18 pF
rss
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 40 50 pF
oss
= 50 W)
out
¾ 75 ¾
tr ¾ 8 ¾
ton ¾ 14 ¾
tf ¾ 35 ¾
; tr, tf < 5 ns
V
t
off
IN
D.U
1% (Z
ns
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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2SK982
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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