Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
DS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
R
• Low C
iss: Ciss = 1300 pF TYP.
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (TC = 25°C) PT1 29 W
Total Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
2. Starting T
C = 25°C) ID(DC) ±48 A
Note1
Note2
Note2
µ
s, Duty Cycle ≤ 1%
ch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
D(pulse) ±192 A
I
T2 1.0 W
stg −55 to +150 °C
AS 22 A
I
AS 48 mJ
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3918
2SK3918-ZK
2SK3918
TO-251 (MP-3)
TO-252 (MP-3ZK)
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3918
Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance Ciss 1300 pF
Output Capacitance Coss 310 pF
Reverse Transfer Capacitance
Turn-on Delay Time td(on) 13 ns
Rise Time tr 14 ns
Turn-off Delay Time td(off) 38 ns
Fall Time tf
Total Gate Charge QG 28 nC
Gate to Source Charge QGS 5 nC
Gate to Drain Charge QGD
Body Diode Forward Voltage
Note
Note
Note
| y
fs | VDS = 10 V, ID = 12 A 6 12 S
RDS(on)1 VGS = 10 V, ID = 24 A 5.9 7.5 mΩ
DS(on)2 VGS = 5.0 V, ID = 12 A 11 22.2 mΩ
R
V
DS = 10 V
GS = 0 V
V
Crss
f = 1 MHz
DD = 12.5 V, ID = 24 A
V
GS = 10 V
V
G = 10 Ω
R
220 pF
14 ns
DD = 20 V
V
GS = 10 V
V
D = 48 A
I
V
F(S-D) IF = 48 A, VGS = 0 V 0.98 V
10 nC
Reverse Recovery Time trr IF = 48 A, VGS = 0 V 27 ns
Reverse Recovery Charge Qrr di/dt = 100 A/µs 15 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
BV
DSS
I
AS
I
D
V
DD
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
G
= 2 mA
I
PG.
50 Ω
V
DS
Starting T
R
L
V
DD
L
DD
V
ch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
PG.
V
GS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
G
V
V
GS
Wave Form
V
DS
Wave Form
GS
10%
0
V
DS
90%
V
DS
0
t
d(on)
10% 10%
trt
t
on
V
GS
d(off)tf
t
90%
90%
off
R
L
V
DD
2
Data Sheet D17077EJ3V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
2SK3918
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
100
80
30
25
20
60
15
dT - Percentage of Rated Power - %
40
20
0
0 25 50 75 100 125 150 175
T
C - Case Temperature - °C
10
5
0
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
100
10
I
D(DC)
R
(at V
DS(on)
Limited
GS
= 10 V)
PW = 100 µs
1 ms
1
ID - Drain Current - A
Power Dissipation Limited
10 ms
TC = 25°C
Single pulse
0.1
0.1 1 10 100
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
th(ch-A)
R
= 125°C/W
100
10
R
th(ch-C)
= 4.31°C/W
1
0.1
Single pulse
0.01
rth(t) - Transient Thermal Resistance - °C/W
µ
1 m 10 m 100 m 1 10 100 1000
100
PW - Pulse Width - s
Data Sheet D17077EJ3V0DS
3
Page 4
Ω
2SK3918
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
200
1000
VGS = 10 V
100
10
Tch = −55°C
25°C
75°C
125°C
150°C
150
100
1
5.0 V
Pulsed
0.1
ID - Drain Current - A
VDS= 10 V
Pulsed
0.01
0123456
V
GS - Gate to Source Voltage - V
ID - Drain Current - A
50
0
0123
V
DS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
VDS = 10 V
D
I
= 1 mA
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
25°C
75°C
125°C
10
150°C
2
1
1
VDS = 10 V
Pulsed
0
VGS(off) - Gate Cut-off Voltage - V
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
0.1
0.1 1 10 100
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
15
VGS = 5.0 V
10
10 V
10
ID = 24 A
5
5
RDS(on) - Drain to Source On-state Resistance - m
4
0
1 10 100 1000
I
D - Drain Current - A
Data Sheet D17077EJ3V0DS
0
RDS(on) - Drain to Source On-state Resistance - mΩ
0 5 10 15 20
V
GS - Gate to Source Voltage - V
Page 5
Ω
r
f
2SK3918
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
10
VGS = 10 V
5
ID = 24 A
Pulsed
0
-100 -50 0 50 100 150 200
RDS(on) - Drain to Source On-state Resistance - m
T
ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
VDD =12.5 V
GS
V
= 10 V
G
= 10
R
Ω
100
d(off)
t
t
10
t
t
d(on)
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1 MHz
100
Ciss , Coss, Crss - Capacitance - pF
0.01 0.1 1 10 100
V
DS - Drain to Source Voltage - V
rss
C
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
25
ID = 48 A, 42 A (at VDD = 5 V)
VDD = 20 V
12.5 V
20
15
5 V
GS
V
10
iss
C
oss
C
12
10
8
6
4
1
td(on), tr, td(off), tf - Switching Time - ns
0.1 1 10 100
I
D - Drain Current - A
5
DS
V
0
VDS - Drain to Source Voltage - V
0102030
QG - Gate Charge - nC
2
0
SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1000
di/dt = 100 A/µs
100
VGS = 10 V
V
GS
= 0 V
100
10
1
0 V
10
0.1
Pulsed
0.01
IF - Diode Forward Current - A
00.511.5
VF(S-D) - Source to Drain Voltage - V
1
trr - Reverse Recovery Time - ns
1 10 100
I
F - Diode Forward Current - A
VGS - Gate to Source Voltage - V
Data Sheet D17077EJ3V0DS
5
Page 6
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 22 A
10
EAS = 48 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 12.5 V
G
R
= 25
100
80
V
I
GS
= 20 →0 V
AS
≤ 22 A
Ω
60
2SK3918
VDD = 12.5 V
G
= 25
R
V
Starting T
Ω
GS
= 20 → 0 V
ch
= 25°C
1
IAS - Single Avalanche Current - A
0.01 0.1 1 10
L - Inductive Load - mH
40
20
0
Energy Derating Factor - %
25 50 75 100 125 150
Starting T
ch - Starting Channel Temperature - °C
6
Data Sheet D17077EJ3V0DS
Page 7
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Mold Area
4.0 MIN.
6.6 ±0.2
5.3 TYP.
4.3 MIN.
2.3 ±0.1
0.7 TYP.6.1 ±0.21.8 ±0.2
0.5 ±0.1
2SK3918
2) TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
1.0 TYP.6.1±0.2
2.3±0.1
0.5±0.1
No Plating
1423
1.14 MAX.
0.76 ±0.1
2.3 TYP. 2.3 TYP.
16.1 TYP.
No Plating
1.02 TYP.
9.3 TYP.
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.0 MIN.0.8
1.14 MAX.
1423
0.76±0.12
2.3 2.3
10.4 MAX. (9.8 TYP.)
No Plating
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
0.51 MIN.
0 to 0.25
0.5±0.1
EQUIVALENT CIRCUIT
Drain
Gate
Source
Body
Diode
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D17077EJ3V0DS
7
Page 8
2SK3918
•
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
•
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M8E 02. 11-1
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