Datasheet 2sk3711 Datasheet

60V N -ch MOSFET

1/9

2SK3711

December 2005

■Features

• Low on-resistance

• Built-in gate protection diode

• Avalanche energy capability guaranteed

■Applications

• Electric power steering

• High current switching

■Equivalent circuit

G (1)

D (2)

S (3)

■Package—TO3P

Absolute maximum ratings

(Ta=25°C)

Characteristic Symbol Rating Unit

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Continuous Drain Current ID ±70A A

Pulsed Drain Current ID (pulse)

Maximum Power Dissipation PD 130 (Tc=25°C) W

Single Pulse Avalanche Energy EAS

Channel Temperature Tch 150 °C

Storage Temperature Tstg -55 to 150 °C

*1 PW≤100μs, duty cycle≤1%

*2 V

DD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1

*1

±140A A

*2

468 mJ

.

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http://www.sanken-ele.co.jp/en/

T02-002EA-051124

60V N -ch MOSFET

2/9

2SK3711

December 2005

Electrical characteristics

(Ta=25°C)

Characteristic Symbol Test Conditions

Drain to Source breakdown Voltage

Gate to Source Leakage Current

Drain to Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Static Drain to Source On-Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Limits

MIN TYP MAX

V(BR)DSS ID=100μA,VGS=0V 60 V

IGSS V

IDSS VDS=60V, VGS=0V 100 μA

VTH VDS=10V, ID=1mA 2.0 3.0 4.0 V

Re(Yfs) VDS=10V, ID=35A 30 80 S

RDS(ON) ID=35A, VGS=10V 5.0 6.0 mΩ

Ciss 8000

Coss 1250

Crss

GS=± 1 5V ±10 μA

V

DS=10V

GS=0V

V

f=1MHz

1000

Unit

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Diode Forward Voltage

Source-Drain Diode Recovery Time trr

td(on) 110

tr 100

td(off) 440

tf

VSD ISD=50A,VGS=0V 0.9 1.5 V

D=35A, VDD≈20V

I

RL=0.57Ω,

VGS=10V

Rg=22Ω

Refer to Fig. 2

ISD=25A,

di/dt=50A/μs

ns

160

100 ns

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T02-002EA-051124

60V N -ch MOSFET

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2SK3711

December 2005

Characteristic Curves (Tc=25°C)

80

70

60

50

40

ID (A)

30

20

10

0

0.0 0.5 1.0 1.5 2.0

2SK3711

I

Characteristic (typical)

D-VDS

VGS=10V

VGS=5.0V

VDS (V)

2SK3711

P

140

120

D-TC

100

80

PD (W)

60

40

20

Characteristic

Ta=25℃

VGS=4.5V

VGS=4.0V

12.0

10.0

8.0

6.0

RDS(ON) (mΩ)

4.0

2.0

0.0

∞ Fin

-100 -50 0 50 100 150 200

7.0

6.0

5.0

4.0

3.0

RDS(ON) (mΩ)

2.0

1.0

R

DS(ON)-ID

R

Tc (℃)

2SK3711

Characteristic (typical)

VGS=10V

ID=35A

Ta=25℃

VGS=10V

2SK3711

DS(ON)

-Tc Characteristic (typical)

0

0 50 100 150

D-VGS

Characteristic (typical)

I

80

70

60

50

40

ID (A)

30

20

10

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Tc (℃)

2SK3711

VGS (V)

Tc=-55℃

Tc=25℃

Tc=150℃

VDS=10V

0.0
0 1020304050607080

DS-VGS

1.0

0.8

0.6

VDS (V)

0.4

0.2

0.0
0 5 10 15 20

V

ID (A)

2SK3711

Characteristic (typical)

VGS (V)

ID=70A

ID=35A

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T02-002EA-051124

60V N -ch MOSFET

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2SK3711

December 2005

Characteristic Curves (Tc=25°C)

80

70

60

50

40

IDR (A)

30

20

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

1

I

Characteristic (typical)

DR-VＳＤ

2SK3711

VSD (V)

100000

10000

Tc=150℃

Tc=25℃

Tc=-55℃

Transient Thermal Resistance vs Pulse Width

capacitance (pF)

1000

100

01020304050

capacitance-V

2SK3711

Characteristic (typical)

DS

VDS (V)

Ta=25℃
VGS=0V

f=1MHz

Ciss

Coss

Crss

２SK3711

1000

100

10

ID [A]

1

0.1

0.1 1 10 100

2SK３７１１

SAFE OPERATING AREA

ID(pulse) max

RDS(on) LIMITED

10ms (1shot)

VDS [V]

1ms (1sh ot)

５00μs(1shot

)

θｊ-ｃ　（℃/W）

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100
PW　（sec）

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T02-002EA-051124

60V N -ch MOSFET

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2SK3711

December 2005

Fig.1 Unclamped Inductive Test Method

L

EAS=

1

•L•ILP2•

2

V

(BR)DSS

DD-(BR)DSS

VV

V

GS

0V

R

I

L

V

DS

I

G

V

DD

Lp

I

L

V

(BR)DSS

V

DS

V

DD

(a) Test Circuit (b) Waveforms

Fig.2 Switching Time Test Method

R

L

V

I

R

V

V

R

GS

0V

P.W.=10μs

Duty cycle≦1%

R

G

I

D

V

DS

(a) Test Circuit

V

DD

DD≈20V

D=35A

L=0.57Ω

GS=10V

G=22Ω

GS

V

V

DS

t

d(on)

t

r

t

on

t

d(off)

t

off

90%

10%

90%

10%

t

f

(b) Waveforms

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T02-002EA-051124

60V N -ch MOSFET

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2SK3711

December 2005

External Dimensions

MT100 (TO3P )

3.2

φ±0.1

1.0

±0.3

15.6

±0.3

14.0

±0.2

13.6

±0.2

9.6

±0.2

15.8

+0.2

-0.1

+0.2

+0.2

-0.1

2

3

+0.2

-0.1

-0.1

2

0.6

5.0

2.1

1.7

MAX

MAX

+0.2

-0.3

+0.2

-0.1

5.45

±0.1

5.45

±0.1

(1) (2) (3)

Mass: Approx. 6.0g

(1) Gate

(2) Drain (Back Side)

(3) Source

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T02-002EA-051124

60V N -ch MOSFET

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2SK3711

December 2005

<Worldwide Contacts>

Asia Pacific

China

Sanken Electric Hong Kong Co., Ltd.

Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: [phone]
Fax: [phone]

Sanken Electric (Shanghai) Co., Ltd.

Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: [phone]
Fax: [phone]

Taiwan Sanken Electric Co., Ltd.

Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: [phone]
Fax: [phone]

India

Saket Devices Pvt. Ltd.

Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: [phone]
91-20-2528-5449
Fax: [phone]

Japan

Sanken Electric Co., Ltd. Overseas Sales Headquaters

Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: [phone]
Fax: [phone]

Korea

Sanken Electric Korea Co., Ltd.

Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: [phone]
Fax: [phone]

Singapore

Sanken Electric Singapore Pte. Ltd.

150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: [phone]
Fax: [phone]

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60V N -ch MOSFET

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2SK3711

December 2005

Europe

United Kingdom

Sanken Power Systems (UK) Limited

Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK

Tel: [phone]

Fax: [phone]

North America

United States

Allegro MicroSystems, Inc.

115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.

Tel: [phone]

Fax: [phone]

Allegro MicroSystems, Inc. (Southern California)

14 Hughes Street, Suite B105, Irvine, CA 92618

Tel: [phone]

Fax: [phone]

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60V N -ch MOSFET

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2SK3711

December 2005

CAUTION / WARNING

●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

is assumed for inaccuracies.

● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

in the performance, reliability, or manufacturability of its products.

Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that

the information being relied upon is current.

● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of

the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,

intellectual property rights or any other rights of Sanken or any third party which may result from its use.

● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall

be reviewed at the users’ responsibility.

● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of

semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk,

preventative measures including safety design of the equipment or systems against any possible injury, death, fires or

damages to the society due to device failure or malfunction.

● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic

equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).

Before placing an order, the user’s written consent to the specifications is requested.

When considering the use of Sanken products in the applications where higher reliability is required (transportation

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devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your

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● Anti radioactive ray design is not considered for the products listed herein.

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T02-002EA-051124