Page 1
2SK3611-01MR
FUJI POWER MOSFET
Super F AP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage VDS 250
VDSX *5 220
Continuous drain current ID ±10
Pulsed drain current ID(puls] ±40
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 10
Maximum Avalanche Energy EAS *1 182
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
Tc=25
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO 2
*1 L=3.05mH, Vcc=48V *2 Tch 150°C
<
*4 VDS 250V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item Symbol Test Conditions
Thermal resistance
*5 VGS=-30V *6 t=60sec f=60Hz
<
=
www.fujielectric.co.jp/denshi/scd
°C
°C
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.16
25
-55 to +150
<
=
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
VDS=250V VGS=0V
Tch=125°C
VDS=200V VGS=0V
VGS=±30V
VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=5A
VGS=10V
RGS=10 Ω
VCC=125V
ID=10A
VGS=10V
L=100µH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
Tch=25°C
<
=
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Min. Typ. Max. Units
250
3.0 5.0
25
250
10 100
200 260
510
785 1178
88 132
46
12 18
2.7 4.1
22 33
7.4 11.1
21 31.5
812
5 7.5
10
1.10 1.65
0.155
1.05
Min. Typ. Max. Units
5.0
58.0
°C/W
°C/W
ns
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
1
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2SK361 1-01MR
Characteristics
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
30
25
20
15
PD [W]
10
5
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
30
20V
25
20
7.0V
10V
8V
7.5V
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=10A
300
250
200
150
EAV [mJ]
100
50
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
15
ID [A]
10
5
0
024681012
6.5V
6.0V
VGS=5.5V
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
gfs [S]
1
ID[A]
1
0.1
012345678910
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.6
0.5
0.4
]
Ω
0.3
RDS(on) [
0.2
VGS=
5.5V
6.0V
6.5V
7.0V
7.5V
8V
10V
20V
0.1
0.1 1 10 100
ID [A]
0.1
0.0
0 5 10 15 20 25 30
ID [A]
2
Page 3
2SK361 1-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
800
700
600
]
Ω
500
400
RDS(on) [ m
300
200
100
0
-50 -25 0 25 50 75 100 125 150
max.
typ.
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
14
12
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
VGS(th) [V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
max.
min.
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
0
10
µ
A
Ciss
10
8
6
VGS [V]
4
2
0
Vcc= 125V
0 10203040
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
IF [A]
1
-1
10
C [nF]
-2
10
-3
10
-1
10
0
10
1
10
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V , VGS=10V, RG=10Ω
3
10
2
10
t [ns]
10
tf
td(off)
td(on)
1
10
Coss
Crss
2
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
tr
0
10
-1
10
0
10
1
10
2
10
ID [A]
3
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2SK361 1-01MR
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
10
0
10
C/W]
°
-1
10
Zth(ch-c) [
-2
10
-3
10
-6
10
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=48V
2
10
-5
10
FUJI POWER MOSFET
-4
10
-3
10
t [sec]
-2
10
-1
10
0
10
Avalanche current IAV [A]
10
10
1
10
Single Pulse
0
10
-1
-2
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
tAV [sec]
4
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