Datasheet 2sk3541m Datasheet

Surface Mount N-Channel MOSFET

P b

Lead(Pb)-Free

Features:

Low on-resistance

*

Fast switching speed

*

Drive &ircuits &an %e 6imple

*

Parallel 8se ,s (asy

*

:e 'eclare 7hat 7he 0aterial 2f 3roduct

* *

&ompliance :ith RoHS 5equirements.

Applications:

Interfacing,switching(30V,100mA)

*

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2SK3541M

3

1

2

SOT-723

1 Gate

* Gate

Protection Diode

1. Gate

2. Source

3. Drain

3 Drain

2 Source

Maximum Ratings(T

=25 C Unless Otherwise Specified)

A

Rating Symbol Value Unit

Drain-Source Voltage

V

DSS

30

V

Gate-Source Voltage

Continuous Drain Current

V

GSS

I

D

±20

±

100

mA

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature Range

P

D

I

DM

TJ,Tstg

150

±

400

-55~+150

mW

mA

˚C

* Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pw≤10µs,Duty Cycle≤1%

2. With Each Pin Mounted On The Recommended Lands.

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2SK3541M

Electrical Characteristics(T

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage current

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

Forward Transfer Admittance

=3V,ID=100μA

@V

DS

@V

GS

=0,ID=10μA

@V

GS

±

= 20V,V

@V

=30V,VGS 0=

DS

GS

=4V,ID=10mA

@V

=2.5V,ID=1mA

@V

GS

@VDS=3V,ID=10mA

= 25℃ Unless otherwise noted)

A

DS

=0V

V

(BR)DSS

V

GS(Th)

I

GSS

I

DSS

30 - -

0.8 -

- -

R

DS(on)

-

|Y |

fs

2 0

5

7

-

1.5

±

1.0

8

13

-

V

1

μA

Ω

m s

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

@V

=0V,VDS=5V,f=1.0MHz

GS

@V

GS

Switching

Turn-on Delay Time

=5V, VDD=5V,ID=10mA,RG=10Ω,

V

GS

Turn-on Rise Time

V

=5V, VDD=5V,ID=10mA,RG=10Ω,

GS

Turn-off Delay Time

V

=5V, VDD=5V,ID=10mA,RG=10Ω,

GS

Turn-off Fall Time

=5V, VDD=5V,ID=10mA,RG=10Ω,

V

GS

=0V,VDS=5V,f=1.0MHz

@V

=0V,VDS=5V,f=1.0MHz

GS

=500ΩR

L

=500ΩR

L

=500ΩR

L

=500ΩR

L

C

t

d(on)

t

d(off)

iss

oss

rss

t

-

r

- 35

13 -

9.0 -

4.0 -

15

pF

-

ns

-

f

80

-

80-

Device Marking

2SK3541M = KN

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2SK3541M

Electrical Characteristic

0.15

(A)

D

0.1

0.05

DRAIN CURRENT : I

0

4V

3.5V

0 1 2 3 4 5

DRAIN-SOURCE VOLTAGE : VDS (V)

3V

2.5V

2V

=

V

1.5V

GS

Fig.1 Typical output characteristics

50

(Ω)

DS(on)

Ta=125°C

20

10

5

2

75°C 25°C

−25°C

Ta=25°C Pulsed

VGS=4V Pulsed

200m

VDS=3V

100m

Pulsed

50m

(A)

D

20m 10m

5m 2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m 04

1

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125°C

75°C 25°C

−25°C

2

Fig.2 Typical transfer characteristics

50

(Ω)

DS(on)

Ta=125°C

20

10

5

2

75°C 25°C

−25°C

3

VGS=2.5V Pulsed

2

(V)

GS(th)

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−25 25 50 75 100 125 150

−50 0

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

channel temperature

15

(Ω)

DS(on)

10

5

ID=0.1A

VDS=3V

D

I

=0.1mA

Pulsed

Ta=25°C Pulsed

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

resistance vs. drain current (Ι)

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)

Fig.5 Static drain-source on-state

resistance vs. drain current (ΙΙ)

ID=0.05A

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

0 5 10 15 20

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static drain-source

on-state resistance vs. gate-source voltage

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2SK3541M

Typical Characteristics

9

8

(Ω)

7

DS(on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Fig.7 Static drain-source on-state

ID=100mA

6

5 4

3

2 1

0

-

50 0 25 150

−25 50 75 100 125

CHANNEL TEMPERATURE : Tch (°C)

resistance vs. channel temperature

200m

(A)

100m

DR

50m 20m

10m

VGS=4V 0V

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse drain current vs.

source-drain voltage (ΙΙ)

ID=50mA

10.50

VGS=4V Pulsed

Ta=25°C Pulsed

FORWARD TRANSFER

CAPACITANCE : C (pF)

1.5

0.5

0.2 Ta=−25°C

0.1

0.05

0.02

0.01

0.005

ADMITTANCE : |Yfs| (S)

0.002

0.001

50

20

10

5

2

1

0.5

0.1

Fig.11 Typical capacitance vs.

25°C 75°C

125°C

0.0001

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 DRAIN CURRENT : ID (A)

Fig.8 Forward transfer

admittance vs. drain current

0.2 0.5 1 2 5 10 20 50

DRAIN-SOURCE VOLTAGE : VDS (V)

drain-source voltage

V

Pulsed

0.1 0.2 0.5

=25°C

Ta

f=1MH VGS=0V

C

iss

C

oss

rss

C

200m

=3V

DS

(A)

100m

DR

50m 20m

10m

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

Fig.9 Reverse drain current vs.

1000

Z

500

200 100

50

20 10

SWITHING TIME : t (ns)

5

2

0.1

Fig.12 Switching characteristics

Ta=125°C

75°C 25°C

−25°C

10.50

SOURCE-DRAIN VOLTAGE : VSD (V)

source-drain voltage (Ι)

f

t

d(off)

r

t

d(on)

0.2 0.5 1 2 5 10 20 50 DRAIN CURRENT : ID (mA)

(See Figures 13 and 14 for the measurement circuit and resultant waveforms)

VGS=0V Pulsed

Ta

=25°C

DD

V

GS

V

G

R

=10Ω

Pulsed

=5V =5V

1.5

100

V

GS

R

G

D.U.T.

Fig.13 Switching time measurement circuit

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Pulse width

I

D

V

DS

R

L

V

DD

V

10%

t

d (on)

10%

90%

t

r

on

t

V

DS

Fig.14 Switching time waveforms

50%

GS

90%

t

d (off)

50%

10%

90%

f

t

off

t

4/5 22-Feb-2012

2SK3541M

Typical Characteristics

−X−

D

b1

3

1

2

e

−Y−

E

b

2X

X0.08 (0.0032) Y

SOT−723

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

A

H

L

E

C

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55 b 0.15 0.20 0.27

b1 0.25 0.3 0.35

C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85

e 0.40 BSC

H 1.15 1.20 1.25

E

L 0.15 0.20 0.25

INCHES

MIN NOM MAX

0.018 0.020 0.022

0.0059 0.0079 0.0106

0.010 0.012 0.014

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

0.40

0.0157

SOLDERING FOOTPRINT

0.0157

0.40

0.0157

0.40

0.0157

0.40

0.0157

1.0

0.039

ǒ

inches

mm

Ǔ

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