Datasheet 2SK3541 Datasheet (ROHM)

2SK3541

Transistor

2.5V Drive Nch MOS FET

2SK3541

zStructure

Silicon N-channel MOSFET

zApplica tions

Interfacing, switching (30V, 100mA)

zFeatures

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive ( 2.5V) makes this device ideal for portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

zPackaging specifications

Type

2SK3541

Package Code Basic ordering unit

(pieces)

Taping

T2L

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current

Total power dissipation Channel temperature Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands.

Continuous Pulsed

Symbol Limits Unit

DSS

V V

GSS

D

1

∗

I

DP

2

∗

P

D

Tch

Tstg °C−55 to +150

30 V

±20

±100I

150 150

Rev.B 1/3

zExternal dimensions (Unit : mm)

VMT3

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

(1)Gate (2)Source (3)Drain

0.22

Abbreviated symbol : KN

0.40.4

0.8

0.2

0.5

zEquivalent circuit

Gate

∗ Gate

Protection Diode

V mA mA±400

mW

°C

∗A protection diode is included between the gate

and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded.

0.13

Drain

Source

Transistor

zElectrical characteristics (Ta=25°C)

t

Symbol

GSS

I

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

R

DS(on)

|Yfs|

C

iss

oss

C C

rss

d(on)

t

r

t

d(off)

f

t

Parameter

Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain curren Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

zElectrical characteristic curves

Typ. Max. Unit Conditions

Min.

GS

=±20V, VDS=0V

D

=10µA, VGS=0V

I

DS

=30V, VGS=0V

V

DS

=3V, ID=100µA

V

D

=10mA, VGS=4V

I

D

=1mA, VGS=2.5V

I I

D

=10mA, VDS=3V

V

DS

=5V

V

GS

=0V

f=1MHz

D

=10mA, VDD 5V

I

GS

=5V

V

L

=500Ω

R R

G

=10Ω

30

0.8

20

−

±1

−

1.0

−

1.5

−

5

8

713

−

13

15 35 80 80

−

9

−

4

−

µAV

V

µA

V

Ω

mS

pF pF pF ns ns ns ns

2SK3541

0.15

0.1

0.05

DRAIN CURRENT : ID (A)

4V

0

012345

DRAIN-SOURCE VOLTAGE : VDS (V)

3.5V

3V

2.5V

2V

V

GS

=

1.5V

Fig.1 Typical output characteristics

50

(Ω)

DS(on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Fig.4 Static drain-source on-state

Ta=125°C

20

10

0.5

5

2

1

0.001

75°C 25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DRAIN CURRENT : ID (A)

resistance vs. drain current (Ι)

Ta=25°C Pulsed

V

GS

Pulsed

200m

VDS

=3V

100m

Pulsed

50m

(A)

D

20m 10m

5m 2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m 04

1

GATE-SOURCE VOLTAGE : VGS (V)

Fig.2 Typical transfer characteristics

=4V

50

Ta=125°C

(Ω)

20

DS(on)

10

5

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

75°C 25°C

−25°C

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DRAIN CURRENT : ID (A)

Fig.5 Static drain-source on-state

resistance vs. drain current (ΙΙ)

2

Ta=125°C

75°C 25°C

−25°C

3

V

GS

Pulsed

=2.5V

STATIC DRAIN-SOURCE

2

(V)

GS(th)

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−25 25 50 75 100 125 150

−50 0

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

channel temperature

15

(Ω)

DS(on)

10

5

ON-STATE RESISTANCE : R

0

0 5 10 15 20

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static drain-source

on-state resistance vs. gate-source voltage

ID=0.1A

ID=0.05A

V

DS

=3V

D

=0.1mA

I Pulsed

Ta=25°C Pulsed

Rev.B 2/3

Transistor

9

8

(Ω)

7

DS(on)

6

5 4

3

2 1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

−50 0 25 150

Fig.7 Static drain-source on-state

ID=100mA

−25 50 75 100 125

CHANNEL TEMPERATURE : Tch (°C)

resistance vs. channel temperature

ID=50mA

VGS=4V Pulsed

200m

(A)

100m

DR

50m 20m

10m

VGS

=4V

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse drain current vs.

source-drain voltage (ΙΙ)

0V

Ta=25°C Pulsed

10.50

1.5

zSwitching characteristics measurement circuit

0.5

0.2

0.1

0.05

0.02

0.01

0.005

FORWARD TRANSFER

ADMITTANCE : |Yfs| (S)

0.002

0.001

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05

0.0001

Fig.8 Forward transfer

50

20

10

5

2

CAPACITANCE : C (pF)

1

0.5

0.1

0.2 0.5 1 2 5 10 20 50

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.11 Typical capacitance vs.

V

DS

Pulsed

Ta=−25°C

25°C 75°C

125°C

DRAIN CURRENT : ID (A)

0.1 0.2 0.5

admittance vs. drain current

Ta

=25°C f=1MH VGS=0V

Ciss

Coss

Crss

drain-source voltage

Pulse width

200m

=3V

(A)

100m

DR

50m

20m 10m

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

Fig.9 Reverse drain current vs.

1000

Z

500

200 100

50

20 10

SWITHING TIME : t (ns)

5

2

0.1

Fig.12 Switching characteristics

2SK3541

V

Pulsed

Ta=125°C

75°C 25°C

−25°C

10.50

SOURCE-DRAIN VOLTAGE : VSD (V)

source-drain voltage (Ι)

t

f

t

d(off)

t

r

t

d(on)

0.2 0.5 1 2 5 10 20 50

DRAIN CURRENT : ID (mA)

(See Figures 13 and 14 for the measurement circuit and resultant waveforms)

Ta

V V R Pulsed

GS

=25°C

DD GS G

=10Ω

=5V =5V

=0V

1.5

100

V

GS

R

G

D.U.T.

D

I

V

DS

R

L

V

DD

Fig.13 Switching time measurement circuit

V

50%

GS

10%

t

d (on)

10%

90%

t

r

t

on

DS

Fig.14 Switching time waveforms

90%

t

d (off)

50%

10%

90%

t

f

t

off

Rev.B 3/3

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1