Page 1
2SK3532-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Super F AP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage VDS 900
VDSX *5 900
Continuous drain current ID ±6
Pulsed drain current ID(puls] ±24
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 6
Maximum Avalanche Energy EAS *1 244
Maximum Drain-Source dV/dt dVDS/dt *4 40
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
Tc=25
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2
*1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item Symbol Test Conditions
Thermal resistance
<
=
°C
°C
<
=
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz
2.16
70
-55 to +150
<
=
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V
Tch=25°C
VDS=720V VGS=0V
Tch=125°C
VGS=±30V
VDS=0V
ID=3A VGS=10V
ID=3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=3A
VGS=10V
RGS=10 Ω
VCC=450V
ID=6A
VGS=10V
L=12.4mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
<
=
Tch=25°C
Outline Drawings [mm]
TO-220F
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Min. Typ. Max. Units
900
3.0 5.0
25
250
100
1.92 2.50
3.7 7.4
750 1125
100 150
711
21 32
812
42 63
11 16.5
21.5 32
3 4.5
7 10.5
6
0.90 1.50
1.1
5.5
Min. Typ. Max. Units
1.560
58.0
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
°C/W
°C/W
1
Page 2
2SK3532-01MR
Characteristics
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
100
80
60
PD [W]
40
20
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characterist ic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
8
6
ID [A]
4
2
0
0 5 10 15 20
VDS [V]
20V
6.5V
VGS=5.5V
Typical Transconductanc e
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10V
8.0V
7.0V
6.0V
ID[A]
1
0.1
012345678910
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.6
2.5
2.4
]
Ω
2.3
2.2
RDS(on) [
2.1
2.0
VGS=5.5V
6.0V
6.5V
7.0V
8.0V
10V
20V
10
gfs [S]
1
0.1 1 10
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
7
6
5
]
Ω
4
3
RDS(on) [
2
max.
typ.
1.9
1.8
0246810
ID [A]
1
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2
Page 3
2SK3532-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
VGS(th) [V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
max.
min.
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
1
10
Typical Gate Charge Characteristic s
µ
A
VGS=f(Qg):ID=6A,Tch=25°C
14
12
10
8
6
VGS [V]
4
2
0
0 5 10 15 20 25 30 35
Vcc= 180V
450V
720V
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
0
10
-1
10
C [nF]
-2
10
-3
10
0
10
1
10
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
3
10
tf
2
10
td(off)
t [ns]
10
td(on)
1
tr
Ciss
Coss
Crss
2
10
10
IF [A]
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Ω
E(AS)=f(starting Tch):Vc c=90V
800
IAS=2A
600
IAS=4A
400
[mJ]
AS
E
IAS=6A
200
0
10
-1
10
0
10
1
10
ID [A]
0
0 25 50 75 100 125 150
starting Tch [°C]
3
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2SK3532-01MR
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
2
10
FUJI POWER MOSFET
[A]
1
10
AV
0
10
Single Pulse
Avalanche Current I
-1
10
-2
10
-8
10
-7
10
-6
10
-5
10
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
10
0
10
C/W]
°
-1
10
-4
10
-3
10
-2
10
Zth(ch-c) [
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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