Datasheet 2sk3528 Datasheet

2SK3528-01R

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Super F AP-G Series

Features

High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications

Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item Symbol Ratings Unit

Drain-source voltage VDS 600

VDSX *5 600
Continuous drain current ID ±17
Pulsed drain current ID(puls] ±68
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 17
Maximum Avalanche Energy EAS *1 412
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25

Tc=25
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2

*1 L=2.62mH, Vcc=60V *2 Tch 150°C

<

*4 VDS 600V *5 VGS=-30V *6 t=60sec f=60Hz

=

Electrical characteristics (Tc =25°C unless otherwise specified)

Item

Drain-source breakdown voltaget
Gate threshold voltage

Zero gate voltage drain current IDSS

Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton

Turn-off time toff

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge

Thermalcharacteristics

Item Symbol Test Conditions

Thermal resistance

<

=

°C
°C

<

*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C

=

Symbol

V(BR)DSS
VGS(th)

IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr

Rth(ch-c) channel to case
Rth(ch-a) channel to ambient

3.125

120

-55 to +150

<

=

Test Conditions

ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C

VDS=600V VGS=0V

Tch=125°C

VDS=480V VGS=0V

VGS=±30V

VDS=0V

ID=8.5A VGS=10V

ID=8.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8.5A
VGS=10V

RGS=10 Ω

VCC=300V
ID=17A
VGS=10V
L=2.62mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V

-di/dt=100A/µs

Tch=25°C

V
V
A
A
V
A
mJ
kV/µs
kV/µs
W

°C
°C
kVrms

Outline Drawings

TO-3PF

Equivalent circuit schematic

Drain(D)

Gate(G)

Source(S)

<

=

Min. Typ. Max. Units

600

3.0 5.0
25

250

10 100

0.29 0.37

10 20

2280 3420

290 435

16 24
26 39
37 56
78 117
13 19
54 81
15 23
20 30

17

0.93 1.50

0.7

10.0

Min. Typ. Max. Units

1.042

40.0

V
V
µA

nA

Ω

S
pF

ns

nC

A
V
µs
µC

°C/W
°C/W

1

2SK3528-01R

Characteristics

FUJI POWER MOSFET

Allowable Power Dissipation
PD=f(Tc)

140

120

100

80

60

PD [W]

40

20

0

0 25 50 75 100 125 150

Tc [°C]

Typical Transfer Characteristic

ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C

100

Typical Output Characteristics

ID=f(VDS):80µs Pulse test,Tch=25°C

45

40

35

30

25

ID [A]

20

15

10

5

0

0 2 4 6 8 101214161820

20V

VGS=5.5V

VDS [V]

Typical Transconductance

gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C

100

10V

8V

7.0V

6.5V

6.0V

10

ID[A]

1

0.1
012345678910

VGS[V]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80µs Pulse test, Tch=25°C

0.8

VGS=

5.5V

0.7

0.6

]

Ω

0.5

0.4

RDS(on) [

0.3

0.2

0.1

0.0
0 5 10 15 20 25 30 35 40 45

6.0V

6.5V

7.0V

ID [A]

8V
10V

20V

10

gfs [S]

1

0.1

0.1 1 10 100

ID [A]

Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V

1.0

0.9

0.8

0.7

]

Ω

0.6

0.5

RDS(on) [

0.4

0.3

0.2

0.1

0.0

-50 -25 0 25 50 75 100 125 150

max.

typ.

Tch [°C]

2

2SK3528-01R

FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250µA

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

VGS(th) [V]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125 150

max.

min.

Tch [°C]

Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz

1

10

0

10

Ciss

Typical Gate Charge Characteristics

VGS=f(Qg):ID=17A, Tch=25°C

24
22
20
18
16
14
12
10

VGS [V]

8
6
4
2
0

0 20406080100120

Vcc= 120V

Vcc= 300V

Vcc= 480V

Qg [nC]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80µs Pulse test,Tch=25°C

100

10

-1

10

C [nF]

-2

10

-3

10

-1

10

0

10

1

10

VDS [V]

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V , VGS=10V, RG=10Ω

3

10

ID [A]

td(off)

tf

1

10

2

10

td(on)

t [ns]

1

10

10

tr

0

-1

10

0

10

Coss

Crss

2

10

3

10

IF [A]

1

0.1

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

VSD [V]

Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A

500

450

400

350

300

250

200

EAV [mJ]

150

100

50

2

10

0

0 25 50 75 100 125 150

starting Tch [°C]

3

2SK3528-01R

FUJI POWER MOSFET

Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T,D=0

1

10

0

10

C/W]

o

-1

10

Zth(ch-c) [

-2

10

-3

10

-6

10

-5

10

-4

10



10

t [sec]

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting T ch=25°C. Vcc=60V

2

10



-3

-2

10

-1

10

0

10

Avalanche current IAV [A]

1

10

10

10

10

10

Single Pulse

0

-1

-2

-8

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

tAV [sec]

4