Datasheet 2SK3449 Datasheet (SANYO)

Ordering number : ENN6672

2SK3449

N-Channel Silicon MOSFET

2SK3449

DC / DC Converter Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 19.2 A

Tc=25°C10W

Package Dimensions

unit : mm

2190

[2SK3449]

8.0

4.0

1.0

1.6

0.8

0.8

0.75

2.4

1.0

1

2

4.8

1.4

3.0

11.0

7.5

1.5

3.0

15.5

3

1.7

3.3

0.7

1 : Source
2 : Drain
3 : Gate

SANYO : TO-126ML

60 V

±20 V

4.8 A

1W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V

(BR)DSSID

DSS
GSS

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22201 TS IM TA-2919

No.6672-1/4

Unit

2SK3449

Continued from preceding page.

Parameter Symbol Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 110 pF

Output Capacitance Coss VDS=20V , f=1MHz 35 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 16 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4.8A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4.8A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4.8A 0.8 nC
Diode Forward Voltage V

yfs



RDS(on)1 ID=2.4A, VGS=10V 240 320 mΩ
RDS(on)2 ID=2.4A, VGS=4V 320 440 mΩ

SD

VDS=10V, ID=2.4A 2.2 3.2 S



See specified Test Circuit 3.2 ns

r

See specified Test Circuit 4.8 ns

f

IS=4.8A, VGS=0 1 1.2 V

Switching Time Test Circuit

VDD=30V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID=2.4A

RL=12.5Ω

V

OUT

Ratings

min typ max

Unit

P.G

1.6

1.4

1.2

5.0V

4.0V

3.5V

10.0V

-- A

1.0

D

0.8

0.6

Drain Current, I

0.4

0.2

0

0

0.4

Drain-to-Source V oltage, VDS -- V

800

700

600

(on) -- mΩ

500

DS

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

024681012

RDS(on) -- V

Gate-to-Source V oltage, VGS -- V

I

50Ω

D

-- V

DS

S

2SK3449

8.0V

3.0V

=2.5V

V

GS

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

GS

Tc=25°C

ID=2.4A

14 16 18 20

IT01212

IT01214

I

-- V

3.5

VDS=10V

3.0

2.5

-- A
D

2.0

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5

D

Gate-to-Source V oltage, VGS -- V

600

500

400

(on) -- mΩ

DS

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 - -20 0 20 40 60 80 100 120 140 160

RDS(on) -- Tc

GS

=2.4A, V

I

D

=2.4A, V

I

D

Case Temperature, Tc -- °C

GS

=4V

GS

Tc=75°C

- -25°C

=10V

25°C

IT01213

IT01215

No.6672-2/4

10

7
5

fs| -- S

y

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

0.01

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

1.0

10

9

8

-- V

7

GS

6

5

4
3

2

Gate-to-Source V oltage, V

1
0

0

1.2

|yfs| -- I

Tc= --25°C

75°C

0.1 1.0

Drain Current, I

SW Time -- I

t

(off)

d

t

f

td(on)

t

r

0.1 1.0

23 577235

Drain Current, I

VGS -- Qg

VDS=10V
ID=4.8A

Total Gate Charge, Qg -- nC

PD -- Ta

D

D

D

2SK3449

VDS=10V

25°C

23 5723 5723 57

-- A

10

IT01216

D

V

=30V

DD

VGS=10V

-- A

IT02549

4.54.03.01.0 2.0 2.5 3.50.5 1.5

IT01220

10

7
5

3
2

1.0

-- A
F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss -- pF

5
3

2

1.0

0

3

I

=19.2A

DP

2

10

7

I

=4.8A

D

5

-- A
D

3
2

1.0
7
5

Drain Current, I

3
2

Tc=25°C
Single pulse

0.1

23 57 23 2357

0.1

12

I

-- V

F

SD

25°C

Tc=75°C

--25°C

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

10 20

Drain-to-Source V oltage, V

A S O

DC operation

Operation in
this area is
limited by RDS(on).

1.0 10

Drain-to-Source V oltage, V

PD -- Tc

SD

DS

100ms

DS

-- V

DS

-- V

10ms

-- V

<10µs

1ms

V

GS

IT01217

f=1MHz

IT01219

100µs

57

IT02450

= 0

6030 40 50

100

1.0

-- W
D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

60

80 100 120

Amibient Tamperature, Ta -- °C

140 160

IT02451

10

-- W
D

8

6

4

Allowable Power Dissipation, P

0020 40260

Case Tamperature, Tc -- °C

80 100 120

140 160

IT02452

No.6672-3/4

2SK3449

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.

No.6672-4/4

PS