Datasheet 2SK3354-Z, 2SK3354-S, 2SK3354 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3354

DESCRIPTION

The 2SK3354 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES

•Super low on-state resistance:

DS(on)1

= 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A)

R

★

DS(on)2

★
★

•Low C

= 12 mΩ MAX. (VGS = 4 V, ID = 42 A)

R

iss

iss

: C

= 6300 pF TYP.

•Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T

★

Single Avalanche Current

★

Single Avalanche Energy

Note1

C

= 25°C) P

A

= 25°C) P

Note2

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

stg

AS

I

AS

E

T

T

ch

ORDERING INFORMATION

PART NUMBER PACKAGE

60 V

20 V

±

83 A

±

332 A

±

100 W

1.5 W

150 °C

–55 to +150 °C

55 A

302 mJ

2SK3354
2SK3354-S
2SK3354-Z

TO-220AB

TO-262

TO-220SMD

Notes 1.

★

PW ≤ 10

2.

Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty cycle ≤ 1 %

THERMAL RESISTANCE

Channel to Case Rth(ch-C) 1.25
Channel to Ambient Rth(ch-A) 83.3

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D14131EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan

The mark ★ shows major revised points.

C/W

°

C/W

°

©

1999

★

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3354

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 42 A6.38.0m
= 4 V, ID = 42 A8.012m

Ω
Ω

= 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 42 A3559S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V

iss

VDS = 10 V, VGS = 0 V, f = 1 MHz 6300 pF

oss

rss

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 42 A, V

r

RG = 10

f

G

ID = 83 A , VDD = 48 V, VGS = 10 V 106 nC

= 83 A, VGS = 0 V1.0V

IF = 83 A, VGS = 0 V, 55 ns

rr

di/dt = 100 A/µs 100 nC

GS(on)

= 10 V, VDD = 30 V, 100 ns

Ω

1000 pF

1500 ns

±

490 pF

300 ns
440 ns

20 nC
30 nC

10

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

VGS = 20 → 0 V

PG.

V

R

G

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

0

%

90

10 %10

t

d(on)

trt

t

on

V

GS(on)

I

D

d(off)tf

90

%

%

90

%

t

off

R

L

V

DD

2

Data Sheet D14131EJ1V0DS00

PACKAGE DRAWING (Unit: mm)

2SK3354

1) TO-220AB (MP-25)

10.6 MAX.

1

10.0

2 3

3.0±0.3

4

1.3±0.2

0.75±0.1

2.54 TYP.

φ

3.6±0.2

5.9 MIN.6.0 MAX.

2.54 TYP.

15.5 MAX.12.7 MIN.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

1.3±0.2

2.8±0.2

2) TO-262 (MP-25 Fin Cut)

(10)

4

1

2 3

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

3) TO-220SMD (MP-25Z)

(10)

4

1.0±0.5

1.4±0.2

1.0±0.3

2.54 TYP. 2.54 TYP.

Remark

123

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

3.0±0.5

11±0.4

2.8±0.2

8.5±0.2

(0.5R)

4.8 MAX.

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

0.5±0.2

EQUIVALENT CIRCUIT

Drain

Body

Gate

Gate
Protection
Diode

Source

Diode

Data Sheet D14131EJ1V0DS00

3

2SK3354

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M7 98. 8