Datasheet 2SK3349 Datasheet (HIT)

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)
RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)

• 2.5 V gate drive device

• Small package (SMPAK)

Outline

2SK3349

ADE-208-804 (Z)

1st.Edition.

June 1999

SMPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SK3349

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|5685—mSI
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 7 — pF VGS = 0
Reverse transfer capacitance Crss — 1.2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is DN

20——V I

±10——V I

——±5 µAV
——1 µAV

0.8 — 1.8 V ID = 10 µA, VDS = 5 V
— 2.8 3.6 Ω I
— 4.8 7.2 Ω I

— 120 — ns ID = 25 mA, VGS = 4 V
— 450 — ns RL = 400 Ω
— 480 — ns
— 500 — ns

20 V
±10 V
50 mA
200 mA
50 mA
100 mW

= 100 µA, VGS = 0

D

= ±100 µA, VDS = 0

G

= ±8 V, VDS = 0

GS

= 20 V, VGS = 0

DS

= 25 mA,VGS = 4 V

D

= 10 mA,VGS = 2.5 V

D

= 25 mA, VDS = 10 V

D

Note 3

Note 3

Note 3

2

Main Characteristics

2SK3349

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad.(12.5x20x0.7mm)

Typical Output Characteristics

5 V

0.2
4 V

Pulse Test

3 V

0.16

D

0.12

Maximum Safe Operation Area

5

2

1.0

0.5

D

0.2

0.1

0.05

0.02

0.01

0.005

Drain Current I (A)

0.002

0.001

0.0005

Operation in this area
is limited by RDS(on)

0.05

0.1 1.0 10 50

0.2 0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic boad.(12.5x20x0.7mm)

DC Operation

25

DS

PW = 10 ms

(1 shot)

20

Typical Transfer Characteristics

0.2
V = 10 V

DS

Pulse Test

0.16

D

0.12

10 µs

100 µs

1 ms

0.08

Drain Current I (A)

0.04

0

246810

Drain to Source Voltage V (V)

V = 2V

GS

DS

0.08

Drain Current I (A)

0.04

0

75 °C

12345

Gate to Source Voltage V (V)

25 °C

Tc = –25 °C

GS

3

2SK3349

Drain to Source Satueation Voltage

vs. Gate to Source Voltage

1.0

0.8

0.6

DS(on)

0.4

V (V)

10m A

0.2

25m A

Drain to Source Saturation Voltage

0

24

6

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

10

8

I = 25m A

()

6

DS(on)

R

4

2

V = 2.5 V

GS

4 V

D

10,25,50m A

Static Drain to Source on State

50

Pulse Test

20

()

10

5

DS(on)

R

2

I = 50mA

D

1.0

0.5

8 10 0.01 0.050.02

GS

Static Drain to Source on State Resistance

0.5
V = 10 V

0.2

|yfs| (mS)

Pulse Teat

0.1

10mA

0.05

0.02

0.01

Resistance vs. Drain Current

Pulse Test

V = 4V

GS

Drain Current I (A)

D

Forward Transfer Admittance

vs. Drain Current

DS

Tc = –25 °C

25 °C

75 °C

2.5 V

0.1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

Pulse Test

Forward Transfer Admittance

0.005

0.001 0.002 0.005 0.1
Drain Current I (A)

D

2SK3349

Typical Capacitance

10

vs. Drain to Source Voltage

Ciss

Coss

Crss

1.0

Capacitance C (pF)

V = 0

GS

0.1

f = 1 MHz

048121620

Drain to Source Voltage V (V)

DS

Reverse Drain Current

vs. Source to Drain Voltage

0.2
10 V

10000

Switching Characteristics

1000

100

Switching Time t (ns)

V = 2.5 V, V = 10 V

10

PW = 5 µs, duty < 1 %

Drain Current I (A)

GS

0.05

D

DD

t

d(off)

t

d(on)

t

r

t

f

0.10.020.01

0.16

DR

0.12

5 V

V = 0,-5V

GS

0.08

0.04

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

5

2SK3349

Switching Time Test Circuit Waveforms

Vin Monitor

Vin
4 V

50

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

6

Package Dimensions

2SK3349

Unit: mm

0.2

+ 0.1
– 0.05

0.5

1.0
.1.6

0.3

+ 0.1
– 0.1

+ 0.2
– 0.2

0.5

+ 0.1
– 0.05

0.2

+ 0.1
– 0.0.5

0.15

+ 0.1

– 0.1

0.7

+ 0.1

0.8

0.4

– 0.1

0.4

+ 0.2

– 0.2

1.6

0.15

0 ~ 0.1

+ 0.1
– 0.05

Hitachi Code

EIAJ

JEDEC

SMPAK

–
–

7

2SK3349

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8

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