Datasheet 2SK3324 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3324

DESCRIPTION

The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.

FEATURES

• Low gate charge :
QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

R

= 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

stg

AS

I

AS

E

T

T

–55 to + 150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3324

900 V
±30 V

±6 A
±18 A
120 W

3.0 W

6.0 A

21.6 mJ

TO-3P

(TO-3P)

Notes 1.

Document No. D14203EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan

PW ≤ 10

2.

Starting T

µ

s, Duty cycle ≤ 1 %

ch

= 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

The mark

••••

shows major revised points.

©

1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

2SK3324

Drain Leakage Current I
Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V
Forward Transfer Admittance | yfs | 2.5 3.3 S VDS = 20 V, ID = 3.0 A

••••

Drain to Source On-state Resi stance R

••••

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q

Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

GSS

GS(off)

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)

rr

rr

100

AVDS = 900 V, VGS = 0 V

µ

±100 nA VGS = ±30 V, VDS = 0 V

2.5 3.5 V VDS = 10 V, ID = 1.0 mA

2.5 2.8

1000 pF

200 pF

42 pF
17 ns
38 ns
57 ns
33 ns
32 nC

5nC

20 nC

VGS = 10 V, ID = 3.0 A

Ω

DS

V

= 10 V,

GS

= 0 V,

V
f = 1 MHz

DD

V

= 150 V,

D

= 3.0 A,

I

GS(on)

= 10 V,

V

G

= 10

R

DD

V

= 450 V,

GS

= 10 V,

V

D

= 6.0 A

I

0.9 V IF = 6.0 A, VGS = 0 V

1.9

9.0

F

s

= 6.0 A, VGS = 0 V,

I

µ

di/dt = 50 A/

C

µ

Ω,

RL = 10

s

µ

Ω

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

GS

V

0

τ = 1 s
Duty Cycle ≤ 1 %

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D14203EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3324

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

FORWARD BIAS SAFE OPERATING AREA

100

10

Limited

DS(on)

R

1

- Drain Current - A

D

I

TC = 25

˚C

Single Pulse

0.1
1 10 1000100

DS

- Drain to Source Voltage - V

V

Power Dissipation Limited

I

D(pulse)

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

P

W

=100

µs

1

ms

10

ms

8

6

4

- Drain Current - A

D

I

2

0

4

DS

V

VGS =

10 V

8

12

- Drain to Source Voltage - V

Pulsed

16 20

FORWARD TRANSFER CHARACTERISTICS

100

TA = 125˚C

10

75˚C
25˚C

−25˚C

1

- Drain Current - A

D

I

0.1

0.01
01015

5

GS

- Gate to Source Voltage - V

V

Pulsed

Data Sheet D14203EJ2V0DS00

3

1 000

2SK3324

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

0.0001

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

10

1

TA = −25˚C

0.001 0.01 0.1 1 10 100 1000

25˚C
75˚C

125˚C

PW - Pulse Width - s

R

th(ch-A)

= 41.7 ˚C

R

th(ch-C)

= 1.04 ˚C

TC = 25˚C
Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

8

6

4

2

ID =

Pulsed

6.0 A

3.0 A

| - Forward Transfer Admittance - S

fs

y

|

0.1

0.10.01

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

8

6

4

2

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

I

10.01 0.1

D

- Drain Current - A

VDS = 20
Pulsed

1.0

Pulsed
VGS = 10

10 100

V

10

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

4812

GS

- Gate to Source Voltage - V

V

5

V

DS

V

= 10 V

ID = 1.0 mA

4

3

2

1

- Gate to Source Cut-off Voltage - V

GS(off)

0

V

−50

0

50 100

ch

- Channel Temperature - ˚C

T

150

4

Data Sheet D14203EJ2V0DS00

2SK3324

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

6

5

4

3

2

1

- Drain to Source On-state Resistance - Ω

0

DS(on)

R

−50

0

ch

- Channel Temperature - ˚C

T

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

100

50

10000

1000

100

Ciss, Coss, Crss - Capacitance - pF

10

0.1

1 10 100

DS

- Drain to Source Voltage - V

V

VGS = 10 V

ID = 3.0 A

150

VGS = 0 V
f = 1 MHz

C

iss

C

oss

C

rss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

- Diode Forward Current - A

SD

I

0.1
0

VGS = 10 V

0.5

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1000

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1

0.1

1 10 100

D

- Drain Current - A

I

0 V

1

Pulsed

t

r

t

f

t

d(off)

t

d(on)

VDD = 150 V
V

GS

= 10 V

R

G

= 10 Ω

1.5

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10000

1000

100

- Reverse Recovery Time - ns

rr

t

10

0.1

1 10 100

F

- Drain Current - A

I

di/dt = 50 A /

GS

=

0 V

V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

µ

s

16

I

D

= 6.0 A

12

VDD = 450 V

300 V

8

4

- Drain to Source Voltage - V

DS

V

0

10 20 30 40

Q

150 V

G

- Gate Charge - nC

Data Sheet D14203EJ2V0DS00

5

2SK3324

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100.0

10.0
IAS = 6.0 A

E

AS

=

21.6
mJ

1.0

- Single Avalanche Energy - A

DD

= 150 V

V

AS

GS

= 20 V → 0 V

V

I

R

G

= 25 Ω

0.1

1.00E-04 1.00E-03 1.00E-02 1.00E-01
L - Inductive Load - H

SINGLE AVALANCHE ENERGY
DERATING FACTOR

100

80

60

40

20

Energy Derating Factor - %

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

VDD = 150 V
R

G

= 25 Ω

V

GS

= 20 V → 0 V

AS

≤ 6.0 A

I

125 150

6

Data Sheet D14203EJ2V0DS00

PACKAGE DRAWING (Unit : mm)

TO-3P (MP-88) EQUIVALENT CIRCUIT

2SK3324

Remark

Drain

Body
Diode

Source

15.7 MAX.

1.0 TYP.5.0 TYP.3.4 MAX.

23

1

19 MIN. 20.5 MAX.

5.45 TYP. 5.45 TYP.

3.2±0.2

4

18.7±0.4 4.5±0.2

1: Gate
2: Drain
3: Source
4: Fin (Drain)

4.7 MAX.

1.5 TYP.

Gate

7.0 TYP.

2.8±0.11.0±0.2 0.6±0.12.2±0.2

Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14203EJ2V0DS00

7

2SK3324

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

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M7 98. 8