Datasheet 2SK3306 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3306

DESCRIPTION

The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low gate charge :

★★★★

QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

R

= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V Gate to Source Voltage (V

DS

= 0 V) V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation (T Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3306 Isolated TO-220 (MP-45F)

(Isolated TO-220)

500 V

±30 V

±5A

±20 A

35 W

2.0 W

150 °C

–55 to +150 °C

5.0 A

125 mJ

Notes 1.

Document No. D14004EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan

PW ≤ 10

2.

Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

The mark

★★★★

shows major revised points.

©

1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TE ST CONDITIONS

2SK3306

Drain Leakage Current I

★★★★

Gate to Source Leakage Current I Gate to Source Cut-off Voltage V

★★★★

Forward Transfer Admittance | yfs | 1.0 3.0 S VDS = 10 V, ID = 2.5 A

★★★★

Drain to Source On-state Resi stance R Input Capacitance C

★★★★

Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t

★★★★

Total Gate Charge Q

★★★★

Gate to Source Charge Q

★★★★

Gate to Drain Charge Q

★★★★

Body Diode Forward Voltage V Reverse Recovery Time t

★★★★

Reverse Recovery Charge Q

DSS

GSS

GS(off)

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)

rr

100

100 nA V

±

AVDS = 500 V, VGS = 0 V

µ

GS

= ±30 V, VDS = 0 V

2.5 3.5 V VDS = 10 V, ID = 1 mA

1.35 1.5

VGS = 10 V, ID = 2.5 A

Ω

700 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 115 pF

6pF

16 ns VDD = 150 V, ID = 2.5 A, V

3nsR

G

= 10

33 ns

5.5 ns 13 nC VDD = 400 V, V

4nC

4.5 nC

1.0 V IF = 5.0 A, VGS = 0 V

0.7

3.3

sIF = 5.0 A, VGS = 0 V, di/dt = 50 A /

µ

C

µ

Ω,

R

L

= 60

GS(on)

= 10 V,

Ω

= 10 V, ID = 5.0 A

µ

s

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

GS

V

0

τ = 1 s Duty Cycle ≤ 1 %

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

d(on)

t

on

90 %

V

GS

(on)

90 %

I

D

10 %

r

t

d(off)

t

f

t

off

2

Data Sheet D14004EJ2V0DS00

TYPICAL CHARACTERISTICS(TA = 25 °C)

2SK3306

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020

40 60 100 120 140 160

c

- Case Temperature - ˚C

T

80

FORWARD BIAS SAFE OPERATING AREA

100

Limited

= 10 V)

DS (on)

GS

I

D (DC)

R

(at V

Power Dissipation Limited

100 ms

10

1

- Drain Current - A

D

I

Tc = 25 ˚C Single Pulse

0.1 1

10 100 1000

DS

- Drain to Source Voltage - V

V

I

D (pulse)

10 ms

1ms

PW = 10 µs

100 µs

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

50

40

30

20

10

- Total Power Dissipation - W

T

P

20 40 60 80 100 120 140 160

0

c

- Case Temperature - ˚C

T

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

10

8

VGS = 20 V

6

4

- Drain Current - A

D

I

2

0

4 8 12 16

DS

- Drain to Source Voltage - V

V

Pulsed

10 V

8.0 V

VGS = 6.0 V

1000

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001 0

GS

V

DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE

Pulsed

TA = –25 ˚C

25 ˚C 75 ˚C

125 ˚C

51015

- Gate to Source Voltage - V

Data Sheet D14004EJ2V0DS00

3

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

R

th(ch-A)

= 62.5 ˚C/W

10

R

th(ch-C)

1

0.1

- Transient Thermal Resistance - ˚C/W

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

th(ch-C) (t)

r

PW - Pulse Width - s

= 3.57 ˚C/W

T

c

= 25 ˚C

Single Pulse

2SK3306

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

10

TA = –25 ˚C

25 ˚C 75 ˚C

125 ˚C

1

0.1

IyfsI - Forward Transfer Admittance - S

0.01

110

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

3.0 Pulsed

2.0

VDS = 10 V Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

4.0

3.0

D

= 5.0 A

2.0

I

ID = 2.5 A

1.0

- Drain to Source On-State Resistance - W

1000.1

DS(on)

R

0.0 10 15 20

GS

- Gate to Source Voltage - V

V

Pulsed

2505

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

4.0 V

DS

= 10 V

D

= 1 mA

I

3.0

2.0

1.0

- Gate to Source Cut-off Voltage - V

- Drain to Source On-State Resistance - Ω

0

0.1 10

DS(on)

R

4

1

D

- Drain Current - A

I

Data Sheet D14004EJ2V0DS00

GS(off)

0.0

V

–50 0 50 100 150 200

Tch - Channel Temperature - ˚C

2SK3306

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

3.0

ID = 5.0 A

2.0

ID = 2.5 A

1.0

- Drain to Source On-State Resistance - W

0.0

DS(on)

–50 0 50 100 150

R

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

C

1 000

100

iss

C

oss

VGS = 10 V

VGS = 0 V f = 1.0 MHz

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

10

1

VGS = 10 V

0.1

- Diode Forward Current - A

SD

I

0.01

0.5

V

SD

- Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

100

10

VGS = 0 V

Pulsed

1.00.0

t

r

t

d(off)

t

d(on)

t

f

1.5

- Capacitance - pF

10

rss

, C

oss

, C

iss

C

1

C

rss

0.1 1 100 1000

10

V

DS

- Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.

DRAIN CURRENT 2000 1800

di/dt = 100 A/µs V

GS

= 0 V

1600 1400 1200 1000

800 600 400

- Reverse Recovery Time - ns

rr

200

t

0

0.1 10 100

1

ID - Drain Current - A

- Switching Time - ns

f

, t

1

d(off)

, t

r

, t

d(on)

t

0.1

0.1 100

110

I

D

- Drain Current - A

V V RG = 10 Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

800 700 600

VDD = 400 V

250 V

500

125 V 400 300 200

DS

- Drain to Source Voltage - V

100

DS

V

4281061214

Qg - Gate Charge - nC

DD

= 150 V

GS

= 10 V

ID = 5.0 A

V

GS

14 12 10 8 6 4

- Gate to Source Voltage - V

GS

2

V

Data Sheet D14004EJ2V0DS00

5

2SK3306

SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE

150

125

100

EAS = 125 mJ

75

50

25

- Single Avalanche Energy - mJ

AS

E

0

25

50 75 100 125

Starting T

ch

- Starting Channel Temperature - ˚C

D(peak)

= I

I RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V

AS

150 175

SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD

100

RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25 ˚C

10

IAS = 5.0 A

E

AS

= 125 mJ

1

- Single Avalanche Current - A

AS

I

0.1

1.00E–04 1.00E–03 1.00E–02 1.00E–01 L - Inductive Load - H

6

Data Sheet D14004EJ2V0DS00

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

2SK3306

★★★★

15.0±0.3

2.54

Remark

10.0±0.3

123

3.2±0.2

3±0.1

4±0.2

1.3±0.20.7±0.1

1.5±0.2

2.54

4.5±0.2

13.5 MIN. 12.0±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

2.7±0.2

2.5±0.1

EQUIVALENT CIRCUIT

Drain

Body

Gate

Source

Diode

Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14004EJ2V0DS00

7

2SK3306

• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

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M7 98. 8