Datasheet 2SK3305-S, 2SK3305, 2SK3305-ZJ Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3305

DESCRIPTION

The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.

FEATURES

• Low gate charge:
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)

• Gate voltage rating: ±30 V

• Low on-state resistance

DS(on)

R

= 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V

DS

= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

ch

stg

AS

I

AS

E

500 V

±30 V

±5A

±20 A

T

T

75 W

1.5 W

150 °C

–55 to +150 °C

5.0 A

125 mJ

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3305

2SK3305-S

2SK3305-ZJ

(TO-220AB)

(TO-262)

(TO-263)

TO-220AB

TO-262
TO-263

Notes 1.

Document No. D14003EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan

PW ≤ 10

2.

Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty Cycle ≤ 1 %

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

©

1998,2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3305

Drain Leakage Current I
Gate to Source Leakage Current I
Gate to Source Cut-off Voltage V

DSS

VDS = 500 V, VGS = 0 V 100

GSS

VGS = ±30 V, VDS = 0 V

GS(off)VDS

= 10 V, ID = 1 mA 2.5 3.5 V

100 nA

±

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 2.5 A 1.0 3.0 S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)VGS

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= 10 V, ID = 2.5 A 1.3 1.5

VDS = 10 V, VGS = 0 V, f = 1 MHz

VDD = 150 V, ID = 2.5 A, V

G

R

= 10

RL = 60

Ω,

VDD = 400 V, VGS = 10 V, ID = 5.0 A

= 5.0 A, VGS = 0 V 0.9 V

IF = 5.0 A, VGS = 0 V, di/dt = 50 A /

700 pF
115 pF

6pF

GS(on)

= 10 V,

Ω

16 ns

3ns

33 ns

5.5 ns
13 nC

4nC

4.5 nC

s

µ

0.6

3.3

A

µ

Ω

s

µ

C

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

90

%

%

t

off

L

R

V

DD

2

Data Sheet D14003EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25°C)

2SK3305

Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020 80

40 60 100 120 140 160
T

c

- Case Temperature - ˚C

Figure3. FORWARD BIAS SAFE OPERATING AREA

100

PW = 10 µs

I

D (pulse)

10

R

DS (on)

Limited

I

D (DC)

Power Dissipation Limited

100 µs

1ms

10 ms

Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

100

80

60

40

20

- Total Power Dissipation - W

T

P

20 40 60 80 100 120 140 160

0

c

- Case Temperature - ˚C

T

Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

8

VGS = 20 V

6

Pulsed

10 V

8.0 V

1

- Drain Current - A

D

I

Tc = 25 ˚C
Single Pulse

0.1
1

V

Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

1000

100

10

1

0.1

- Drain Current - A

D

I

0.01

0.001
0

GS

V

10 100 1000

DS

- Drain to Source Voltage - V

Pulsed

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

51015

- Gate to Source Voltage - V

4

ID - Drain Current - A

2

0

DS - Drain to Source Voltage - V

V

VGS = 6.0 V

4 8 12 16

Data Sheet D14003EJ1V0DS00

3

Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

2SK3305

100

10

1

0.1

0.01

rth(t) - Transient Thermal Resistance - ˚C/W

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

1

0.1

I - Forward Transfer Admittance - S

fs

Iy

0.01

0.01

110

ID - Drain Current - A

VDS = 10 V
Pulsed

PW - Pulse Width - s

1000.1

R

th(ch-A) = 62.5 ˚C/W

Rth(ch-C) = 1.67 ˚C/W

Tc = 25 ˚C
Single Pulse

Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

4.0

3.0

ID = 5.0 A

2.0

ID = 2.5 A

1.0

- Drain to Source On-state Resistance - Ω

DS(on)

R

0.0
10 15 20

V

GS

- Gate to Source Voltage - V

Pulsed

2505

Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

3.0
Pulsed

Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

4.0
V

DS

= 10 V

I

D

= 1 mA

3.0

2.0

2.0

1.0

1.0

- Gate to Source Cut-off Voltage - V

- Drain to Source On-state Resistance - Ω

0

DS(on)

0.1 10

R

1

I

D

- Drain Current - A

4

100

Data Sheet D14003EJ1V0DS00

GS(off)

0.0

V

–50 0 50 100 150 200

Tch - Channel Temperature - ˚C

2SK3305

Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

3.0

ID = 5.0 A

2.0

ID = 2.5 A

1.0

- Drain to Source On-state Resistance - Ω

0.0

DS(on)

–50 0 50 100 150

R

T

ch

- Channel Temperature - ˚C

VGS = 10 V

Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10000

VGS = 0 V
f = 1.0 MHz

C

1000

100

- Capacitance - pF

10

rss

, C

oss

1

, C

iss

C

iss

C

oss

C

rss

0.1
1 100 1000

10

DS

- Drain to Source Voltage - V

V

Figure15. REVERSE RECOVERY TIME vs.

DRAIN CURRENT
2000
1800

di/dt = 100 A/µs

GS

= 0 V

V

1600
1400
1200
1000

800
600
400

- Reverse Recovery Time - ns

rr

200

t

0

0.1 10 100

1

IF - Drain Current - A

Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

Pulsed

10

1

VGS = 10 V

VGS = 0 V

0.1

- Diode Forward Current - A

SD

I

0.01

0.5

V

SD

- Source to Drain Voltage - V

1.00.0

1.5

Figure14. SWITCHING CHARACTERISTICS

100

10

- Switching Time - ns

f

, t

1

d(off)

, t

r

, t

d(on)

t

0.1

0.1 100

110

D

- Drain Current - A

I

t

r

t

d(off)

t

d(on)

t

f

DD

= 150 V

V
V

GS

= 10 V

RG = 10 Ω

Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

800

ID = 5.0 A

700
600

VDD = 400 V

250 V

500

125 V
400
300
200

V

- Drain to Source Voltage - V

100

DS

V

DS

V

GS

14
12
10
8
6

4
2

4281061214

QG - Gate Charge - nC

- Gate to Source Voltage - V

GS

V

Data Sheet D14003EJ1V0DS00

5

2SK3305

Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE

150

125

100

EAS = 125 mJ

D(peak)

= I

I
RG = 25 Ω
VGS = 20 V → 0 V
V

DD

= 150 V

75

50

25

- Single Avalanche Energy - mJ

AS

E

0

25

50 75 100 125

Starting T

ch

- Starting Channel Temperature - ˚C

AS

150 175

Figure18. SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD

100

RG = 25 Ω
VDD = 150 V
VGS = 20 V → 0 V
Starting Tch = 25 ˚C

10

IAS = 5.0 A

1

IAS - Single Avalanche Current - A

0.1

100 µ

1 m 10 m

L - Inductive Load - H

E

AS

= 125 mJ

100 m

6

Data Sheet D14003EJ1V0DS00

PACKAGE DRAWINGS (Unit: mm)

2SK3305

1) TO-220AB (MP-25)

10.6 MAX.

1

10.0

2 3

3.0±0.3

4

1.3±0.2

0.75±0.1

2.54 TYP.

φ

3.6±0.2

5.9 MIN.6.0 MAX.

2.54 TYP.

15.5 MAX.12.7 MIN.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

1.3±0.2

2.8±0.2

2) TO-262 (MP-25 Fin Cut)

(10)

4

2 3

1

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

1.0±0.5

8.5±0.2

12.7 MIN.

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

3) TO-263 (MP-25ZJ)

(10.0)

4

1.0±0.5

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

Remark

123

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

8.5±0.2

5.7±0.4

2.8±0.2

4.8 MAX.

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

0.5±0.2

EQUIVALENT CIRCUIT

Drain (D)

Body

Gate (G)

Source (S)

Diode

Data Sheet D14003EJ1V0DS00

7

2SK3305

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
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M7 98. 8