Datasheet 2SK3304 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3304

DESCRIPTION

The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.

FEATURES

• Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

R

= 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (Pulse) Total Power Dissipation (T Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

D(DC)

D(pulse)

I

stg

AS

I

AS

E

T

–55 to + 150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3304

900 V ±30 V

±7 A ±21 A 130 W

3.0 W

7A

147 mJ

TO-3P

(TO-3P)

Notes 1.

Document No. D13992EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan

PW ≤ 10

2.

Starting T

µ

s, Duty cycle ≤ 1 %

ch

= 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

©

2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3304

Drain Leakage Current I Gate to Source Leakage Current I Gate to Source Cut-off Voltage V

DSS

VDS = 900 V, VGS = 0 V 100

GSS

VGS = ±30 V, VDS = 0 V ±100 nA

GS(off)VDS

= 10 V, ID = 1.0 mA 2.5 3.5 V Forward Transfer Admittance | yfs |VDS = 20 V, ID = 4.0 A 2.5 4.7 S Drain to Source On-state Resi stance R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q

Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DS(on)VGS

iss

VDS = 10 V V

oss

f = 1 MHz

rss

d(on)

VDD = 150 V

D

I

r

V

d(off)

R

f

G

VDD = 450 V V

GS

D

I

GD

F(S-D) IF

rr

IF = 7.0 A, VGS = 0 V

di/dt = 50 A/

rr

= 10 V, ID = 4.0 A 1.6 2.0

1300 pF

GS

= 0 V

240 pF

55 pF 20 ns

= 4.0 A

GS(on)

= 10 V

G

= 10

RL ≅ 36

Ω,

Ω

44 ns 73 ns 45 ns 44 nC

GS

= 10 V

= 7.0 A

6nC

28 nC

= 7.0 A, VGS = 0 V 1.0 V

2.4

s

µ

13.5

A

µ

Ω

s

µ

C

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

BV

DSS

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L

R

G

PG.

GS

V

0

τ = 1 s Duty Cycle ≤ 1 %

R

V

DD

τ

µ

GS

V

Wave Form

I

D

Wave Form

V

GS

10 %

0

90 %

I

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D13992EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3304

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

FORWARD BIAS SAFE OPERATING AREA

100

I

D(pulse)

I

D(DC)

=

10

DS(on)

R

(at V

1

- Drain Current - A

D

I

TC = 25 Single Pulse

0.1 1 10 1000100

7 A

Limited

= 10 V)

GS

Power Dissipation Limited

˚C

DS

- Drain to Source Voltage - V

V

100

= 21 A

10

ms

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

10

P

W

=100

µs

1

ms

8

6

VGS =

20 V

VGS =

10 V

VGS =

6 V

4

- Drain Current - A

D

I

2

Pulsed

0

4

DS

V

8

- Drain to Source Voltage - V

16 20

12

FORWARD TRANSFER CHARACTERISTICS

100

TA = 125˚C

10

75˚C 25˚C

−25˚C

1

- Drain Current - A

D

I

0.1

0.01 01015

5

GS

- Gate to Source Voltage - V

V

Pulsed

Data Sheet D13992EJ1V0DS00

3

1000

2SK3304

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

0.0001

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100

TA = −25˚C

10

1

| - Forward Transfer Admittance - S

fs

y

|

0.1

25˚C 75˚C

125˚C

10.1

D

- Drain Current - A

I

0.001 0.01 0.1 1 10 100 1000

R

th(ch-A)

= 41.7 ˚C

R

th(ch-C)

= 0.96 ˚C

TC = 25˚C Single Pulse

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

5.0

4.0

3.0

2.0

ID = 7 ID = 4

1.0

VDS = 20

V

Pulsed

10

100

- Drain to Source On-state Resistance - Ω

0.0

0 5 10 15 20 25

DS(on)

R

GS

- Gate to Source Voltage - V

V

Pulsed

A A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

8.0

6.0

Pulsed VGS = 10

V

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

5.0

V

DS

ID = 1.0 mA

4.0

= 10 V

3.0

4.0

2.0

- Drain to Source On-state Resistance - Ω

0.0

DS(on)

R

I

4

10.01 0.1

D

- Drain Current - A

10 100

Data Sheet D13992EJ1V0DS00

1.0

- Gate to Source Cut-off Voltage - V

GS(off)

0.0

V

−50

0

50 100

ch

- Channel Temperature - ˚C

T

150

2SK3304

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

5.0

4.0

3.0

2.0

1.0

- Drain to Source On-state Resistance - Ω

0.0

DS(on)

R

−50

0

ch

- Channel Temperature - ˚C

T

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

100

50

10000

1000

100

10

Ciss, Coss, Crss - Capacitance - pF

1

10 100 1000

DS

- Drain to Source Voltage - V

V

VGS = 10 V

ID = 4.0 A

150

VGS = 0 V f = 1

MHz

C

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

Pulsed

10

1

VGS = 10 V

0.5

VGS = 0 V

1.0

1.5

- Diode Forward Current - A

SD

I

0.1

0.0

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1000

iss

100

- Switching Time - ns

oss

rss

f

, t

d(off)

, t

r

, t

d(on)

t

f

t

d(off)

t

d(on)

10

VDD = 150 V V

GS

1

0.1

t

r

1 10 100

D

- Drain Current - A

I

R

G

= 10 V

= 10 Ω

REVERSE RECOVERY TIME vs. DRAIN CURRENT

10000

1000

100

- Reverse Recovery Time - ns

rr

t

10

0.1

1 10 100

F

- Drain Current - A

I

di/dt = 50 A /

GS

=

0 V

V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

800

I

D

600

400

VDD = 450 V

300 V 150 V

= 7.0 A

14 12

V

GS

10 8 6

200

- Drain to Source Voltage - V

µ

s

DS

V

0

V

DS

10 20 30 60

G

- Gate Charge - nC

Q

40 50

4

- Gate to Source Voltage - V

GS

2

V

0

Data Sheet D13992EJ1V0DS00

5

2SK3304

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100

10

IAS = 7.0 A

E

AS

=

147

1

DD

= 150 V

V

GS

= 20 V → 0 V

V

- Single Avalanche Current - A

G

= 25 Ω

R

AS

I

Starting Tch = 25˚C

0.1

0.0001 0.001 0.01 0.1 L - Inductive Load - H

mJ

SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE

150

EAS = 147 mJ

125

100

75

50

25

- Single Avalanche Energy - mJ

AS

E

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

VDD = 150 V R

G

= 25 Ω

V

GS

= 20 V → 0 V

D

(peak) = I

I

125 150

AS

175

6

Data Sheet D13992EJ1V0DS00

PACKAGE DRAWING (Unit : mm)

TO-3P (MP-88) EQUIVALENT CIRCUIT

2SK3304

Drain

Body Diode

Source

19 MIN. 20.5 MAX.

Remark

15.7 MAX.

1.0 TYP.5.0 TYP.3.4 MAX.

1

5.45 TYP. 5.45 TYP.

4

23

3.2±0.2

18.7±0.4 4.5±0.2

1: Gate 2: Drain 3: Source 4: Fin (Drain)

4.7 MAX.

1.5 TYP.

Gate

7.0 TYP.

2.8±0.11.0±0.2 0.6±0.12.2±0.2

Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D13992EJ1V0DS00

7

2SK3304

•

The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

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•

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•

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M8E 00. 4