Datasheet 2SK3298 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3298

DESCRIPTION

The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.

FEATURES

•Low gate charge

G

= 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)

Q

•Gate voltage rating ±30 V

•Low on-state resistance

DS(on)

= 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A)

R

•Avalanche capability rating s

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (VDS = 0 V) V
Drain Current (DC) (TC = 25°C) I
Drain Current (Pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

I

600 V

±30 V

±7.5 A

±30 A

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3298 Isolated TO-220

Total Power Dissipation (TA = 25°C) P
Total Power Dissipation (TC = 25°C) P

Channel Temperature T
Storage Temperature T

Single Avalanche Current
Single Avalanche Energy

Notes 1.

Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan

PW ≤ 10
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

2.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Note2

Note2

µ

s, Duty Cycle ≤ 1 %

T1

T2

ch

stg

AS

I

AS

E

The mark

2.0 W
40 W

150 °C

−55 to +150 °C

7.5 A

37.5 mJ

★★★★

shows major revised points.

©

1999, 2000

ELECTRICAL CHARACTERISTICS(TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current I
Gate Leakage Current I

DSS

GSS

VDS = 600 V, VGS = 0 V 100
VGS = ±30 V, VDS = 0 V

2SK3298

µ

A

±

100

nA

Gate Cut-off Voltage V

GS(off)

VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 4.0 A 3.2 S
Drain to Source On-state Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

TEST CIRCUIT 1 AVALANCHE CAPABILITY

DS(on)

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

VGS = 10 V, ID = 4.0 A 0.67 0.75

VDS = 10 V 1580 pF

VGS = 0 V 280 pF

f = 1 MHz 25 pF

ID = 4.0 A 27 ns

GS(on)

V

= 10 V 14 ns
VDD = 150 V 66 ns
RG = 10

Ω

24 ns
ID = 7.5 A 34 nC
VDD = 450 V 8.2 nC
VGS = 10 V 12.3 nC

= 7.5 A, VGS = 0 V 1.0 V

IF = 7.5 A, VGS = 0 V 1.6
di/dt = 50 A/µs

9.0

TEST CIRCUIT 2 SWITCHING TIME

Ω

µ

s

µ

C

D.U.T.

RG = 25 Ω

PG.

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

I

D

V

DD

Starting T

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

PG.

50 Ω

L

V

DD

PG.

V

V

DS

ch

R

L

V

DD

GS

0

τ = 1 s

µ

Duty Cycle ≤ 1 %

D.U.T.

V

GS

L

R

GS

V

G

R

Wave Form

V

DD

I

D

Wave Form

τ

10 %

0

I

90 %

D

10 %

0

t

d(on)

r

t

on

t

90 %

V

GS

(on)

90 %

I

D

10 %

t

d(off)

t

f

t

off

2

Data Sheet D14059EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

10 4020 30

5

15

20

10

0

0

25

30

6.0 V

VGS = 10 V

8.0 V

Pulsed

GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE

T

ch

- Channel Temperature - ˚C

V

GS(off)

- Gate to Source Cut-off Voltage - V

–50 0 50 100 150

5.0

4.0

3.0

2.0

1.0

0

V

DS

= 10 V

I

D

= 1 mA

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1.0 10 100
I

D

- Drain Current - A

| y

fs

| - Forward Transfer Admittance - S

10

100

0.1

1.0

0.1

V

DS

= 10 V

Pulsed

Tch = –25˚C

25˚C
75˚C

125˚C

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

15

2.0

3.0

V

GS

- Gate to Source Voltage - V

R

DS (on)

- Drain to Source On-State Resistance - Ω

1.0

0

5100

ID = 7.5 A

4.0 A

Pulsed

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

1 10 100

I

D

- Drain Current - A

R

DS(on)

- Drain to Source On-State Resistance - Ω

3.0

4.0

0

0

1.0

2.0

20 V

VGS = 10 V

2SK3298

FORWARD TRANSFER CHARACTERISTICS

100

Tch = –25˚C

10

1.0

- Drain Current - A

D

I

0.1

0

V

GS

V
Pulsed

25˚C

Tch = 75˚C

125˚C

- Gate to Source Voltage - V

DS

= 10 V

151050

Data Sheet D14059EJ1V0DS00

3

2SK3298

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

50 150

R

DS (on)

- Drain to Source On-State Resistance - Ω

2.0

0

0 100–50

T

ch

- Channel Temperature - ˚C

3.0

1.0

V

GS

= 10 V

Pulsed

ID = 7.5 A

4.0 A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

V

SD

- Source to Drain Voltage - V

I

SD

- Diode Forward Current - A

1.510.50

0

100

10

1.0

0.1

Pulsed

0 V

VGS = 10 V

1000100100.1 1

10000

1000

100

10

1

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

C

iss

, C

oss

, C

rss

- Capacitance - pF

VGS = 0 V
f = 1MHz

V

DS

- Drain to Source Voltage - V

C

rss

C

oss

C

iss

VDD = 150 V
V

GS(on)

= 10 V

R

G

= 10 Ω

SWITCHING CHARACTERISTICS

0.1 1 10 100
I

D

- Drain Current - A

t

d(on)

, t

r

, t

d(off)

, t

f

- Switching Time - ns

100

10

1

0.1

t

d(off)

t

d(on)

t

f

t

r

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 10 100

t

rr

- Reverse Recovery Time - µs

0.1
I

D

- Drain Current - A

10

1

0.1

0.01

di/dt = 50 A/ µs
V

GS

= 0 V

QG - Gate Charge - nC

V

DS

- Drain to Source Voltage - V

02010 30 40

800

600

400

200

0

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V

GS

- Gate to Source Voltage - V

16
14
12
10
8
6
4
2
0

ID = 7.5 A

V

GS

VDD = 450 V

300 V
150 V

V

DS

4

Data Sheet D14059EJ1V0DS00

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

T

ch

- Channel Temperature - ˚C

dT - Percentage of Rated Power - %

04020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

P

T

- Total Power Dissipation - W

0

0

8020 40 60 100 140120 160

40

30

20

10

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

FORWARD BIAS SAFE OPERATING AREA

100

2SK3298

10

1

- Drain Current - A

D

I

R

DS(on)

Limited

TC = 25˚C
Single Pulse

0.1
1

V

DS

100

10

1

I

D(pulse)

PW

=

10

100

I

D(DC)

30

ms

Power Dissipation Limited

100

µs

1

ms

3

ms

10

ms

ms

10 100 1000

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

µs

R

th(ch-A)

=

62.5 ˚C/W

R

th(ch-C)

=

3.13 ˚C/W

0.1

- Transient Thermal Resistance - ˚C/W

(t)
th

0.01

r

100 m 1 10 100 100010 m1 m100 µ10 µ

PW - Pulse Width - s

Data Sheet D14059EJ1V0DS00

Single Pulse

5

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100 µ 1 m 10 m

100

L - Inductive Load - H

I

AS

- Single Avalanche Energy - A

1.0

10

0.1
10 µ

RG = 25 Ω
V

DD

= 150 V

V

GS

= 20 V → 0 V

Starting Tch = 25

˚C

E

AS

= 37.5 mJ

I

AS

= 7.5 A

SINGLE AVALANCHE ENERGY
DERATING FACTOR

75 150125

120

100

80

60

40

20

0

Starting T

ch

- Starting Channel Temperature - ˚C

Energy Derating Factor - %

50 10025

VDD =

150 V

RG = 25

Ω

VGS =

20 V → 0 V

I

AS

≤ 7.5 A

PACKAGE DRAWING (Unit : mm)

2SK3298

Isolated TO-220 (MP-45F)

10.0±0.3

0.3

±

15.0

0.7±0.1

2.54 TYP.

123

2.54 TYP.

φ

3.2

0.1

±

3

0.2

±

4

±

1.3

1.Gate

2.Drain

3.Source

±

0.2

0.2

±

12.0

13.5 MIN.

0.2

4.5

0.65

±

0.2

±

0.2

2.7

EQUIVALENT CIRCUIT

Drain (D)

Body

Gate (G)

±

0.1

2.5

±

0.11.5±0.2

Source (S)

Diode

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

6

Data Sheet D14059EJ1V0DS00

[MEMO]

2SK3298

Data Sheet D14059EJ1V0DS00

7

2SK3298

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confirm that this is the latest version.

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
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M7 98. 8