Datasheet 2SK3293 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6345

2SK3293

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C

[2SK3293]

1.6

0.4

0.5

2

3

1.5

0.75

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

06V
02±V
3A
21A

5.1W

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,A5.1=

2)no(IDV,A1=

I

V,Am1=

D

V

SD

V

SG

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A5.1=6.26.3S

D

V01=511051mΩ

SG

V4=051012mΩ

SG

nimpytxam

Marking : KZ Continued on next page.

60800TS (KOTO) TA-2737 No.6345–1/4

sgnitaR

tinU

2SK3293

Continued from preceding page.

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ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 3.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 8.1Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A3=

S

Switching Time Test Circuit

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

VDD=30V

ID=1.5A

IN

G

RL=20Ω

D

V

OUT

zHM1=f,V02=022Fp
zHM1=f,V02=57Fp
zHM1=f,V02=52Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS92sn

V,V01=

SG

I,V01=

SG

D

0=38.02.1V

sgnitaR

nimpytxam

6.8Cn

A3=

tinU

2SK3293

S

DS

3.5

3.0

2.5

–A

D

2.0

1.5

P.G

8.0V

6.0V

10.0V

5.0V

4.0V

50Ω

I

D

3.5V

-- V

3.0V

VGS=2.5V

1.0

Drain Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source Voltage, VDS –V

250

RDS(on) -- V

GS

Tc=25°C

I

-- V

6

D

GS

VDS=10V

5

4

–A

D

3

2

Drain Current, I

1

Tc=75°C

25°C

--25°C

0

IT01457 IT01458

0 0.5 1.0 1.5 2.0 2.5 3.0

300

Gate-to-Source Voltage, VGS –V

RDS(on) -- Tc

3.5

mΩ

200

(on) –

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

024681012141618

ID=1.5A

1.0A

Gate-to-Source Voltage, VGS –V

IT01459

mΩ

250

(on) –

200

DS

=1.0A, V

I

150

100

50

Static Drain-to-Source

On-State Resistance, R

20

0

--60 --40 --20 0 20 40 60 80 100 120

D

I

D

Case Temperature, Tc – °C

GS

=1.5A, V

=4V

GS

=10V

160140

IT01460

No.6345–2/4

yfs

-- I



10

VDS=10V

7
5

3

|–S

fs

2

1.0
7

5
3

2

0.1
7

5
3

2

Forward Transfer Admittance, | y

0.01
23 57 23 57 23 57 23 57

0.001 0.01 0.1 1.0 10



Tc= --25

25°C

D

°C

75°C

Drain Current, ID–A

100

SW Time -- I

7
5

D

2SK3293

IT01461

t

f

I

-- V

F

25°C

SD

--25°C

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

°C

Tc=75

Diode Forward Voltage, VSD–V

1000

Ciss, Coss, Crss -- V

7
5

DS

f=1MHz

IT01462

3
2

10

7
5

3

Switching Time, SW Time – ns

2

V

Gate-to-Source Voltage, V

1.0

–

GS

0.1

10

9

8

7

6

5

4

3

2

1
0

2.0

23

VDS=10V
ID=3A

0123456789

Total Gate Charge, Qg – nC

7

5

Drain Current, ID–A

V

GS

P

D

t

r

1.0 10

23

-- Qg

-- Ta

td(off)

td(on)

VDD=30V
VGS=10V

7

5

IT01463

IT01465

3
2

100

7
5

Ciss, Coss, Crss – pF

3
2

10

0

100

7
5

3
2

IDP=12A

10

7
5

–A

ID=3A

3

D

2

1.0
7

Operation in

5

this area is

3
2

Drain Current, I

0.1

10

0.01

limited by RDS(on).

7
5

3

Tc=25˚C

2

1pulse

2

0.1

4.0

20 30 40 50 6010

Drain-to-Source Voltage,VDS–V

A S O

100ms

DC operation

7

5

3

Drain-to-Source Voltage,VDS–V

2

1.0 10 100

P

D

3

-- Tc

7

5

100

10ms

2

µs

1ms

1ms

3

Ciss

Coss

Crss

IT01464

µs

10

7

5

IT01466

–W

D

1.5

1.0

0.5

Mounted on a ceramic board (250mm

2

×0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

IT01468

3.5

–W

D

3.0

2.5

2.0

1.5

1.0

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc – °CAmbient Temperature, Ta – °C

No.6345–3/4

IT01467

2SK3293

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6345–4/4