Datasheet 2SK3291 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6413

2SK3291

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C

[2SK3291]

1.6

0.4

0.5

2

3

1.5

0.75

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

06V
02±V

6.1A

4.6A

3.1W

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A8.0=

)no(SD

2IDV,A8.0=

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A8.0=2.17.1S

D

V01=083005mΩ

SG

V4=005086mΩ

SG

nimpytxam

Marking : KX Continued on next page.

60800TS (KOTO) TA-1699 No.6413–1/4

sgnitaR

tinU

2SK3291

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 6.0Cn

egrahC"relliM"niarD-ot-etaGdgQ 5.0Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

S

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

G

50Ω

D

ID=0.8A
RL=37.5Ω

S

V

2SK3291

OUT

zHM1=f,V02=07Fp
zHM1=f,V02=02Fp
zHM1=f,V02=5Fp

tiucriCtseTdeificepseeS5sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS5sn

V,V01=

V,A6.1=

SG

I,V01=

SG

D

0=58.02.1V

sgnitaR

nimpytxam

6.3Cn

A6.1=

tinU

I

-- V

1.8

1.6

1.4

1.2

–A

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2

0

00.60.2 0.4 0.8 1.0 1.2 1.61.4 2.01.8

8.0V

10.0V

D

6.0V

3.0V

Drain-to-Source Voltage, VDS –V

1400

1200

mΩ
–

1000

DS(on)

800

600

400

200

Static Drain-to-Source

On-State Resistance, R

0

010468 14212161820

RDS(on) -- V

Gate-to-Source Voltage, VGS –V

3.5V

DS

5.0V

4.0V

GS

=2.5V

V

GS

Tc=25°C
ID=0.8A

IT01258

IT01260

I

-- V

3.5

VDS=10V

3.0

2.5

–A

D

2.0

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

D

GS

Tc=75°C

°C

--25

25°C

Gate-to-Source Voltage, VGS –V

1000

mΩ

800

–

600

DS(on)

400

200

Static Drain-to-Source

On-State Resistance, R

0

--4 0--60 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Tc

=4V

GS

=0.8A, V

I

D

I

D

GS

=0.8A, V

=10V

Case Temperature, Tc – °C

IT01259

IT01261

No.6413–2/4

y

fs -- I

10

7
5

3

|–S

fs

2

1.0
7
5

3
2

0.1
7

5
3

2

Forward Transfer Admitance, | y

0.01

100

Switching Time, SW Time – ns

1.0

–V

GS

Gate-to-Source Voltage, V

1.4

1.3

1.2

–W

D

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

357 2357 23571023 57

2

0.001 1.00.10.01

7
5

3
2

10

7
5

3
2

7

10

9
8

7

6

5

4

3

2
1

0

0 0.5 1.51.0 2.0 2.5 3.0 3.5 4.0

0

0 20 40 60 80 100 120 140 160

t

0.1

VDS=10V
ID=1.6A

r



°C

Tc=--25

75°C

°C

25

Drain Current, ID–A

SW Time -- I

t

(off)

d

t

f

td(on)

23 5 23 5

Drain Current, ID–A

V

GS

Total Gate Charge, Qg – nC

P

D

Mounted on a ceramic board (250mm

7

-- Qg

-- Ta

1.0

D

D

2

×0.8mm)

Ambient Temperature, Ta – °C

VDS=10V

IT01262

VDD=30V

VGS=10V

IT01264

IT01266

IT01269

2SK3291

I

-- V

F

10

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.20.9

°C

Tc=75

Diode Forward Voltage, VSD–V

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss – pF

5
3

2

1.0

0102030405060

Ciss, Coss, Crss -- V

Drain-to-Source Voltage,VDS–V

2

10

IDP=6.4A

7
5

3

ID=1.6A

2

–A

1.0

D

7
5

3
2

Operation in this

0.1

Drain Current, I

0.01

–W

D

Allowable Power Dissipation, P

area is limited by RDS(on).

7
5

3

Tc=25˚C

2

1pulse

23 57

0.1

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

0 20 40 60 80 100 120 140 160

1.0

Drain-to-Source Voltage,VDS–V

Case Temperature, Tc – °C

SD

VGS=0

°C

°C

25

--25

DS

f=1MHz

Ciss

Coss

Crss

IT01265

A S O

100µs

1ms

10ms

100ms

DC operation

23 57 2 3 57

P

D

10 100

-- Tc

IT01268

IT01263

<10

IT01267

No.6413–3/4

µs

2SK3291

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6413–4/4