Datasheet 2SK3289 Datasheet (HIT)

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)

• 4 V gate drive device.

• Small package (CMPAK)

Outline

2SK3289

ADE-208-743C (Z)

4th.Edition.

June 1999

CMPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SK3289

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 145 220 — mS I
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 18 — pF VGS = 0
Reverse transfer capacitance Crss — 2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is AN
See characteristics curves of 2SK3287

30 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0

1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 1.26 3.44 Ω I
— 2.8 3.44 Ω I

— 200 — ns ID = 150 mA, VGS = 10 V
— 600 — ns RL = 66.6 Ω
— 1100 — ns
— 1100 — ns

30 V
±20 V
300 mA

1.2 A
300 mA
300 mW

= 150 mA,VGS = 10 V

D

= 50 mA,VGS = 4 V

D

= 150 mA, VDS =10 V

D

Note 3

Note 3

Note 3

2

Main Characteristics

2SK3289

400

Power vs. Temperature Derating

300

200

100

Channel Dissipation *Pch (mW)

0

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad.(12.5x20x0.7mm)

Maximum Safe Operation Area

5
2

1.0

0.5

D

0.2

0.1

0.05
Operation in this area

0.02

is limited by RDS(on)

0.01

0.005

Drain Current I (A)

0.002

0.001

Ta=25 °C

0.0005

0.1

0.05 0.2 0.5

1.0 10 50

Drain to Source Voltage V (V)

Value on the alumina ceramic boad.(12.5x20x0.7mm)

PW = 10 ms

(1 shot)

DC Operation

25

DS

20

10 µs

100 µs

1 ms

3

2SK3289

Package Dimensions

Unit: mm

0.3

+ 0.1
– 0.05

0.65

1.3

2.0

0.3

+ 0.2
– 0.2

+ 0.2
– 0.2

0.65

+ 0.10
– 0.05

0.3

+ 0.1
– 0.0.5

0.2

+ 0.1

– 0.1

0.9

0.425

+ 0.1

– 0.1

1.25

0.425

+ 0.3

2.1

– 0.3

0.16

0 ~ 0.1

+ 0.10
– 0.06

Hitachi Code

EIAJ

JEDEC

CMPAK

SC–70

–

4

2SK3289

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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