Datasheet 2SK3287 Datasheet (HIT)

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)

• 4 V gate drive device.

• Small package (MPAK)

Outline

2SK3287

ADE-208-742 C (Z)

4th.Edition.

June 1999

MPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SK3287

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 145 220 — mS I
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 18 — pF VGS = 0
Reverse transfer capacitance Crss — 2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is AN

30 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0

1.3 — 2.3 V ID = 10µ, VDS = 5 V
— 1.26 1.44 Ω I
— 2.8 3.44 Ω I

— 200 — ns ID = 150 mA, VGS = 10 V
— 600 — ns RL = 66.6 Ω
— 1100 — ns
— 1100 — ns

30 V
±20 V
300 mA

1.2 A
300 mA
400 mW

= 150 mA,VGS = 10 V

D

= 50 mA,VGS = 4 V

D

= 150 mA, VDS = 10 V

D

Note 3

Note 3

Note 3

2

Main Characteristics

2SK3287

800

power vs. Temperature Derating

600

400

200

Channel Dissipation *Pch (W)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad.(12.5x20x0.7mm)

Typical Output Characteristics

7 V

1.0

8 V

6 V

0.8

D

0.6

Pulse Test

5 V

Maximum Safe Operation Area

5
2

1.0

0.5

D

0.2

0.1

0.05

0.02
Operation in this area

0.01

0.005

Drain Current I (A)

0.002

0.001

0.0005

is limited by RDS(on)

Ta=25 °C

0.1

0.05

0.2 0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic boad.(12.5x20x0.7mm)

PW = 10 ms

DC Operation

2

1.0

(1 shot)

520

10 50
DS

Typical Transfer Characteristics

1.0

0.8

D

75 °C

0.6

25 °C

Tc = –25 °C

10 µs
100 µs
1 ms

0.4

Drain Current I (A)

0.2

0

246810

Drain to Source Voltage V (V)

4 V

V = 3V

GS

DS

0.4

Drain Current I (A)

0.2

0

246810

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3

2SK3287

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

1.0
Pulse Test

0.8

0.6

I = 300mA

D

DS(on)

0.4

V (V)

150m A

0.2

Drain to Source Saturation Voltage

0

24

Gate to Source Voltage V (V)

50m A

6

GS

Static Drain to Source on State

Resistance vs. Temperature

5

I = 150m A

D

4

V = 4 V

GS

()

3

DS(on)

R

2

1

10 V

50mA,150mA, 300m A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

50mA

Pulse Test

Case Temperature Tc ( °C)

810

Static Drain to Source on State

Resistance vs. Drain Current

50

Pulse Test

20

10

()

5

DS(on)

R

V = 4V

GS

2

1.0

10 V

0.5

Static Drain to Source on State Resistance

0.1 0.50.2
Drain Current I (A)

D

Forwaed Transfer Admittance

vs. Drain Current

5

V = 10 V

DS

|yfs| (S)Forward Transfer Admittance

Pulse Test

2

1.0
Tc = –25 °C

0.5

0.2

75 °C

25 °C

0.1

0.05

0.1 0.2 0.5 1.0
Drain Current I (A)

D

1.0

4

2SK3287

Typical Capacitance vs.

100

50

Drain to Source Voltage

V = 0

GS

f = 1 MHz

20
10

5
2

Coss

Ciss

Crss

1.0

0.5

Capacitance C (pF)

0.2

0.1
01020304050

Drain to Source Voltage V (V)

DS

Reverse Drain Current vs.

Source to Drain Voltage

1.0

10000

Switching Characteristics

5000
2000

1000

500
200

100

50

Switching Time t (ns)

20

10

0.1 1.00.50.2
Drain Current I (A)

t

t

d(on)

V = 4 V, V = 10 V

GS

DD

PW = 5 µs, duty < 1 %

D

f

t

r

t

d(off)

DR

0.8

0.6
10 V

V = 0,-5V

GS

0.4

0.2

5 V

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain voltage V (V)

Pulse Test

SD

5

2SK3287

Switching Time Test Circuit Waveforms

Vin Monitor

Vin
10 V

50

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

6

Package Dimensions

0.4

+ 0.10
– 0.05

+ 0.1

0.65

1.5

– 0.3

+ 0.2

– 0.6

2.8

0.16

0 ~ 0.1

+ 0.10
– 0.06

2SK3287

Unit: mm

0.45

0.45

2.95

1.9

+ 0.2
– 0.2

0.95

0.95

+ 0.1

0.65

0.3

– 0.3

+ 0.2

1.1

– 0.1

Hitachi Code

EIAJ

JEDEC

MPAK
SC-59

TO-236Mod.

7

2SK3287

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