Datasheet 2SK3160 Datasheet (HIT)

2SK3160

Silicon N Channel MOS FET High Speed Power Switching

Features

• Low on-resistance

RDS = 130 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-751 (Z)

1st. Edition

February 1999

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SK3160

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Avalanche current I Avalanche energy E Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

200 V ±20 V 10 A 40 A 10 A 10 A

6.6 mJ 30 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

200 — — V ID = 10 mA, VGS = 0 ±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0 ——10µAVDS = 200 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V — 130 170 mΩ ID = 5 A, VGS = 10 V

— 150 190 mΩ ID = 5 A, VGS = 4 V Forward transfer admittance |yfs| 8 13 — S ID = 5 A, VDS = 10 V Input capacitance Ciss — 1100 — pF VDS = 10 V Output capacitance Coss — 365 — pF VGS = 0 Reverse transfer capacitance Crss — 185 — pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 15 — ns ID = 5 A, VGS = 10 V

— 75 — ns RL = 6 Ω

— 280 — ns

— 110 — ns

— 0.85 — V IF = 10 A, VGS = 0

— 100 — ns IF = 10 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

Note4

2

Main Characteristics

2SK3160

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

20

10 V

5 V

16

4 V

3.5 V

Pulse Test

100

Maximum Safe Operation Area

30 10

D

PW =10 ms (1shot)

DC Operation (Tc = 25°C)

3 1

Operation in

0.3

this area is limited by R

Drain Current I (A)

0.1

DS(on)

0.03 Ta = 25 °C

0.01

12

10

5

Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

10 µs

100 µs

1 ms

50

20 100

DS

200

500

D

12

8

Drain Current I (A)

4

0

246810

Drain to Source Voltage V (V)

3 V

V =2.5 V

GS

DS

D

12

8

4

0

Tc = 75°C

12345

Drain Current I (A)

Gate to Source Voltage V (V)

–25°C

25°C

GS

3

2SK3160

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

5

)

4

DS(on

V (V)

3

2

Pulse Test

I = 10 A

D

1

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

500

Pulse Test

mΩ

400

DS(on)

R ( )

300

V = 4 V

200

GS

10 A

2, 5 A

100

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature T

c

(°C)

5 A 2 A

2, 5 A

10 A

Static Drain to Source on State Resistance

vs. Drain Current

500

Pulse Test

200

DS(on)

R ( )mΩ

100

V = 4 V

GS

10 V

50

20

Drain to Source On State Resistance

10

1

2

Drain Current I (A)

10

5

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

25 °C

Tc = –25 °C

10

75 °C

5

2

1

Forward Transfer Admittance |y | (S)

0.5

V = 10 V

DS

Pulse Test

0.1 0.3 1 3 10 30 100 Drain Current I (A)

D

100

5020

4

2SK3160

Body–Drain Diode Reverse

Recovery Time

1000

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200 100

50

20

Reverse Recovery Time trr (ns)

10

0.1 0.3 1 3 10 30 100 Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

200

V

GS

160

DS

120

V = 150 V

DD

100 V

50 V

20

16

12

10000

5000 2000

1000

500 200

100

Capacitance C (pF)

50

V = 0

GS

20

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

500

300

GS

100

t

f

30

Typical Capacitance vs. Drain to Source Voltage

Switching Characteristics

t

d(off)

t

r

Ciss

Coss

Crss

DS

80

40

Drain to Source Voltage V (V)

0

V = 150 V

DD

100 V

20 40 60 80 100

50 V

I = 10 A

D

Gate Charge Qg (nc)

8

4

V

DS

0

10

Switching Time t (ns)

3

Gate to Source Voltage V (V)

1

0.1 0.3

V = 10 V, V = 30 V

GS

PW = 5 µs, duty < 1 %

3

1

Drain Current I (A)

t

d(on)

DD

10 30100

D

5

2SK3160

Reverse Drain Current vs.

Source to Drain Voltage

20

16

DR

10 V

12

8

V = 0, –5 V

GS

4

Reverse Drain Current I (A)

0

5 V

Pulse Test

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

10

I = 10 A

AP

V = 50 V

AR

8

DD

duty < 0.1 % Rg > 50

6

4

2

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Avalanche WaveformAvalanche Test Circuit

Ω

Vin 15 V

V

DS

Monitor

Rg

50Ω

L

I

AP

Monitor

D. U. T

V

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

2SK3160

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01 10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Switching Time Test Circuit Waveform

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17 °C/W, Tc = 25°C

P

DM

PW

T

D =

100 m 1 10

PW

T

Vin Monitor

Vin 10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout Monitor

Vin

Vout

td(on)

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK3160

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1 Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–67

—

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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