Datasheet 2SK3157 Datasheet (HIT)

2SK3157

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS = 50 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-769A (Z)

2nd. Edition

Februaty 1999

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SK3157

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

150 V
±20 V
20 A
80 A
20 A
20 A
30 mJ
35 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

150 — — V ID = 10 mA, VGS = 0
±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 150 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V
—5070mΩ ID = 10 A, VGS = 10 V

—6080mΩ ID = 10 A, VGS = 4 V
Forward transfer admittance |yfs|1322—S ID = 10 A, VDS = 10 V
Input capacitance Ciss — 1750 — pF VDS = 10 V
Output capacitance Coss — 600 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 18 — ns ID = 10 A, VGS = 10 V

— 125 — ns RL = 3 Ω

— 400 — ns

— 190 — ns

— 0.9 — V IF = 20 A, VGS = 0

— 170 — ns IF = 20 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SK3157

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

20

5 V

16

4 V

Pulse Test

3 V

500
200

100

50

D

20
10

5
2

Operation in

1

0.5

0.2

0.1

0.05

0.1

this area is
limited by R

Ta = 25°C

0.3

Drain Current I (A)

DC Operation

(Tc = 25°C)

DS(on)

1

3

Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

Maximum Safe Operation Area

V = 10 V

DS

Pulse Test

16

10 µs

100 µs

PW = 10 ms(1shot)

1 ms

10

30

DS

1000

300100

D

12

8

Drain Current I (A)

4

0

246810

Drain to Source Voltage V (V)

V = 2.5 V

GS

2 V

DS

D

12

75°C

8

Drain Current I (A)

4

0

12345

Gate to Source Voltage V (V)

25°C

Tc = –25°C

GS

3

2SK3157

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0
Pulse Test

1.6

DS(on)

V (V)

1.2

I = 20 A

D

0.8

10 A

0.4

Drain to Source Saturation Voltage

0

48

12

16 20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

250

Ω

Pulse Test

200

DS(on)

R (m )

150

I = 20 A

D

5, 10 A

100

V = 4 V

GS

50

5, 10 A

20 A

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

5 A

GS

Static Drain to Source on State Resistance

vs. Drain Current

1000

Ω

500

200

DS(on)

R (m )

100

V = 4 V

GS

50

10 V

20

Drain to Source On State Resistance

10

2

1

5

Drain Current I (A)

10

20

D

Forward Transfer Admittance vs.

Drain Current

100

fs

30

Tc = –25 °C

10

75 °C

3

25 °C

1

0.3

Forward Transfer Admittance |y | (S)

0.1

0.1

0.2

0.5

2

1

Drain Current I (A)

V = 10 V
Pulse Test

10

520

D

Pulse Test

50

DS

50 100

100

4

2SK3157

Body–Drain Diode Reverse

Recovery Time

1000

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200

100

50

20

Reverse Recovery Time trr (ns)

10

0.1 1 3 10 1000.3 30
Reverse Drain Current I (A)

DR

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

Ciss

1000

300

100

Capacitance C (pF)

30

V = 0

GS

Coss

Crss

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

DS

200

I = 20A

D

V

160

DS

V = 100 V

DD

50 V

GS

25 V

120

Dynamic Input Characteristics

V

DS

80

40

Drain to Source Voltage V (V)

0

V = 100 V

DD

50 V
25 V

40 80 120 160 200

Gate Charge Qg (nc)

20

5000

Switching Characteristics

2000

16

GS

1000

12

500

200

8

4

0

100

50

Switching Time t (ns)

Gate to Source Voltage V (V)

20

10

0.5

0.2

0.1
Drain Current I (A)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

t

d(off)

t

f

t

r

t

d(on)

2

510

1

20

D

50

5

2SK3157

Reverse Drain Current vs.

Source to Drain Voltage

20

Pulse Test

16

DR

V = 10 V

12

8

4

GS

5 V

0, –5 V

Reverse Drain Current I (A)

0

0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage V (V)

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

50

I = 20 A

AP

AR

40

V = 50 V

DD

duty < 0.1 %
Rg > 50

Ω

30

20

10

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin
15 V

Avalanche Test Circuit Avalanche Waveform

V

DSS

V – V

DSS DD

AR

1
2

V

DS

L

E = • L • I •

AP

2

Monitor

I

AP

Monitor

I

Rg

D. U. T

V

DD

AP

V

I

D

50Ω

V

DD

0

DS

V

(BR)DSS

6

2SK3157

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Switching Time Test Circuit Waveform

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 3.57°C/W, Tc = 25°C

P

DM

PW

T

D =

100 m 1 10

PW

T

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK3157

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1
Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–67

—

8

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