Datasheet 2SK3153 Datasheet (HIT)

2SK3153

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS = 65 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-733A (Z)

2nd. Edition

February 1999

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SK3153

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

120 V
±20 V
15 A
60 A
15 A
15 A
19 mJ
30 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

120 — — V ID = 10 mA, VGS = 0
±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 120 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V
—6585mΩ ID = 8 A, VGS = 10 V

— 80 110 mΩ ID = 8 A, VGS = 4 V
Forward transfer admittance |yfs| 8.5 14 — S ID = 8 A, VDS = 10 V
Input capacitance Ciss — 860 — pF VDS = 10 V
Output capacitance Coss — 360 — pF VGS = 0
Reverse transfer capacitance Crss — 195 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 15 — ns ID = 8 A, VGS = 10 V

— 95 — ns RL = 3.75 Ω

— 200 — ns

— 130 — ns

— 0.9 — V IF = 15 A, VGS = 0

— 100 — ns IF = 15 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SK3153

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

Pulse Test

V = 10 V

GS

40

6 V

4.5 V

5 V

1000

Maximum Safe Operation Area

300
100

D

30
10

DC Operation

(Tc = 25°C)

3

Drain Current I (A)

1

0.3

0.1

0.1

Operation in
this area is
limited by R

Ta = 25°C

0.3

1

DS(on)

3

Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

100 µs

PW = 10 ms

(1 shot)

1 ms

30 100

10

10 µs

300 1000

DS

D

30

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

4 V

3.5 V

3 V

2.5 V

DS

D

12

8

Drain Current I (A)

4

75°C

0

12345

Gate to Source Voltage V (V)

25°C

Tc = –25°C

GS

3

2SK3153

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

1.6

DS(on)

V (V)

1.2
I = 15 A

D

0.8

0.4

Drain to Source Saturation Voltage

0

48

12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

200

Ω

DS(on)

R (m )

160

120

80

Pulse Test

4 V

I = 15 A

D

5 A, 10 A

5 A, 10 A

Pulse Test

10 A

5 A

16 20

GS

15 A

Static Drain to Source on State Resistance

vs. Drain Current

1000

Ω

300

DS(on)

R (m )

100

V = 4 V

GS

Pulse Test

10 V

30

Drain to Source On State Resistance

10

0.1

0.3

1

Drain Current I (A)

3

10

D

Forward Transfer Admittance vs.

Drain Current

100

fs

30

Tc = –25 °C

10

75 °C

3

1

30

25 °C

100

40

V = 10 V

GS

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

0.3

Forward Transfer Admittance |y | (S)

0.1

V = 10 V

DS

Pulse Test

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

2SK3153

Body–Drain Diode Reverse

Recovery Time

1000

300

100

30

di / dt = 50 A / µs

Reverse Recovery Time trr (ns)

10

V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30
Reverse Drain Current I (A)

Dynamic Input Characteristics

200

I = 15 A

D

160

DS

120

V

GS

V = 120 V

DD

80

V = 120 V

40

DD

50 V

Drain to Source Voltage V (V)

0

20 40 60 80 100

25 V

Gate Charge Qg (nc)

DR

V

50 V
25 V

DS

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

10

0

10 20 30 40 50

Drain to Source Voltage V (V)

Switching Characteristics

20

1000

500

16

GS

200
100

12

8

50
20

10

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

5
2

1

0.1 0.2

0.5

Drain Current I (A)

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

10

5

2

1

20

D

50

5

2SK3153

Reverse Drain Current vs.

Source to Drain Voltage

20

16

F

12

10 V

8

V = 0

GS

5 V

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SDF

Maximum Avalanche Energy vs.

Channel Temperature Derating

25

I = 15 A

AP

V = 50 V

AR

20

DD

duty < 0.1 %
Rg > 50

Ω

15

10

5

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin
15 V

Avalanche Test Circuit Avalanche Waveform

V

DSS

V – V

DSS DD

V

V

DS

Monitor

Rg

L

I

AP

Monitor

D. U. T

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

AP

2

50Ω

V

DD

0

DS

V

(BR)DSS

6

2SK3153

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

θ γ θ

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17°C/W, Tc = 25°C

P

DM

100 m 1 10

Pulse Width PW (S)

Switching Time Test Circuit Waveform

PW

T

Tc = 25°C

PW

D =

T

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK3153

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1
Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–67

—

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX