Datasheet 2SK3092 Datasheet (SANYO)

Ordering number : ENN6788

2SK3092

N-Channel Silicon MOSFET

2SK3092

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Low Qg.

Package Dimensions

unit : mm

2083B

[2SK3092]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

1.5

5.5

1.6

Package Dimensions

unit : mm

2092B

[2SK3092]

6.5

5.0

4

1.55.5

7.0

7.5

2.3

2.3

0.5

1.2

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

0.5

7.0

2.5

0.5

1.2
0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3000 TS IM TA-3081

No.6788-1/4

2SK3092

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A

Tc=25°C30W

Electrical Characteristics at Ta=25°C

400 V
±30 V

3A

1.0 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 4.0 V
Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 0.7 1.4 S
Static Drain-to-Source On-State Resistance RDS(on) ID=1.5A, VGS=15V 1.8 2.3 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 360 pF
Output Capacitance Coss VDS=20V , f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 45 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=3A 10 nC
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

r

f

SD

=1mA, VGS=0 400 V
VDS=320V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

See specified Test Circuit 10 ns

See specified Test Circuit 17 ns
IS=3A, VGS=0 0.85 1.2 V

Ratings

min typ max

Marking : K3092

Switching Time Test Circuit

PW=1µs
D.C.≤0.5%

VGS=15V

VDD=200V

D

ID=1.5A

RL=133Ω

V

OUT

Unit

7

6

5

-- A
D

4

3

2

Drain Current, I

1

0

G

P.G

I

D

-- V

R
50Ω

DS

GS

15V

Drain-to-Source V oltage, VDS -- V

2SK3092

S

ID -- V

GS

10V

6

VDS=10V

5

25°C

4

8V

7V

-- A
D

3

2

Tc= --25°C

75°C

Drain Current, I

VGS=6V

3020100

IT01967 IT01968

1

0

0

5101520

Gate-to-Source V oltage, VGS -- V

No.6788-2/4

(on) -- Ω

DS

5

4

RDS(on) -- V

ID=3.0A

3

1.5A

GS

1.0A

2

1

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source V oltage, VGS -- V

7

6

5

VGS(off) -- Tc

(off) -- V

4

GS

3

2

Cutoff V oltage, V

1

0

--50 0 50 100 150

Case Temperature, Tc -- °C

100

7
5

3
2

10

7
5

3

-- A

2

F

1.0
7
5

3
2

0.1
7
5

3
2

Forward Current, I

0.01
7
5

3
2

0.001

0.4 0.6 0.8 1.0 1.2 1.4 1.60.20

°C

25°C

Tc=75

IF -- V

°

--25

SD

C

Diode Forward Voltage, VSD -- V

1000

7
5

Ciss, Coss, Crss -- V

Ciss

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 5 10 15 20 25 30

Coss

Crss

Drain-to-Source V oltage, VSD -- V

VDS=10V
ID=1mA

DS

2SK3092

Tc=25°C

IT01969

IT01971

VGS=0

IT01973

f=1MHz

IT01975

5.0

4.5

4.0

3.5

(on) -- Ω

DS

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

0

--50 --25 0 25 50 75 100

RDS(on) -- Tc

=10V

GS

=1.5A, V

I

D

I

D

=1.5A, V

GS

=15V

Case Temperature Tc -- °C

y

fs -- I

1.0

10

7
5

3
2



Tc= --25

7
5

3
2

25

C

°

D

C

°

C

°

75

Forward Transfer Admittance, |yfs| -- S

0.1

0.1

23 57

1.0

23 57

Drain Current, ID -- A

Switching Time, SW Time -- ns

1000

100

1.0

SW Time -- I

7
5

3
2

7
5

3
2

10

7
5

3
2

t

(off)

d

td(on)

t

r

23 57

1.00.1

D

231057

Drain Current, ID -- A

10

VDS=200V

9

ID=3A

8

-- V
GS

7

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

012345678910

VGS -- Qg

Total Gate Charge, Qg -- nC

125 150

IT01970

VDS=10V

IT01972

VDD=200V
VGS=15V

t

f

IT01974

IT01976

No.6788-3/4

10

100

7
5

3
2

IDP=12A

10

7
5

ID=3A

-- A

3

D

2

1.0
7
5

3
2

Operation in this area

Drain Current, I

0.1

is limited by RDS(on).

7
5

3

Tc=25°C

2

Single pulse

0.01

-- W
D

23 57

35

30

25

20

Forward Bias A S O

<10µs

100µs

1ms

10ms

DC operation

23 57

10

Drain-to-Source V oltage, VDS -- V

P

-- Tc

D

23

1001.0

57

IT01977

1000

2SK3092

1.4

1.2

-- W
D

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

PD -- Ta

Amibient Tamperature, Ta -- °C

IT01979

15

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT01978

This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.

No.6788-4/4

PS