Datasheet 2SK3053 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3053

DESCRIPTION

The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.

FEATURES

• Low On-State Resistance = 45 mΩ MAX. (VGS = 10 V, ID = 13 A)

RDS(on)1 R

= 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)

DS(on)2

• Low C

: C

iss

= 790 pF TYP.

• Built-in Gate Protection Diode

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage V Gate to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (Pulse) Total Power Dissipation (T Total Power Dissipation (T

Note1

= 25°C) P

C

= 25°C) P

A

Channel Temperature T Storage Temperature T Single Avalanche Current Single Avalanche Energy

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

I

D(pulse)

T

ch

stg

I

AS

E

AS

+20, −10 V

–55 to +150 °C

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3053 Isolated TO-220

(Isolated TO-220)

60 V

±20 V

±25 A ±75 A

30 W

2.0 W

150 °C

12.5 A

15.6 mJ

Notes 1.

!

Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan

PW ≤ 10 Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V

2.

s, Duty cycle ≤ 1 %

µ

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

The mark

shows major revised points.

!!!!

©

1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3053

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 13 A 28 45 mΩ = 4.0 V, ID = 13 A 46 70 mΩ

= 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 13 A 8.0 16 S Drain Leakage Current I Gate to Source Leakage Current I Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t

!

Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q

!

Gate to Drain Charge Q Body Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

iss

VDS = 10 V 790 pF

oss

VGS = 0 V 240 pF

rss

f = 1 MHz 100 pF

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 13 A 20 ns

r

VGS = 10 V 200 ns VDD = 30 V 65 ns

f

RG = 10 Ω 95 ns

G

ID = 25 A 20 nC VDD = 48 V 3.0 nC VGS = 10 V 6.5 nC

= 25 A, VGS = 0 V 1.0 V

IF = 25 A, VGS = 0 V 40 ns

rr

di/dt = 100 A/µs45nC

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

L

V

DD

PG.

RG = 25 Ω

50 Ω

VGS = 20 → 0 V

DSS

BV

I

AS

V

I

D

V

DD

DS

Starting T

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

PG.

IG = 2 mA

50 Ω

R

L

V

DD

!

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

G

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

V

GS

L

R

V

GS

Wave Form

V

DD

I

D

Wave Form

10 %

0

90 %

I

D

10 %

0

t

d(on)

r

t

on

t

I

D

t

d(off)

t

off

90 %

10 %

t

f

2

Data Sheet D12912EJ3V0DS

TYPICAL CHARACTERISTICS (TA = 25 °C )

2SK3053

!

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

04020 60 100 14080 120 160

T

ch

- Channel Temperature -

FORWARD BIAS SAFE OPERATING AREA

1000

100

I

D(pulse)

100

ms

Power Dissipation Limited

10

ms

10

R

DS(on)

(at V

Limited

= 10 V)

GS

I

D(DC)

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

35 30

25 20

15 10

- Total Power Dissipation - W

T

5

P

0

˚C

PW

=

10

µs

100

µs

1

ms

TC - Case Temperature - ˚C

8020 40 60 100 140120 160

- Drain Current - A

D

I

1

C

= 25˚C

T Single Pulse

0.1

DS

V

1000

100

10

1

0.1

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.01 10

1 10 100

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

µ

100

1 m 10 m 100 m 1 10 100 1000

µ

PW - Pulse Width - s

Single Pulse

R

th(ch-A)

th(ch-C)

= 62.5 ˚C/W

= 4.17 ˚C/W

Data Sheet D12912EJ3V0DS

3

2SK3053

FORWARD TRANSFER CHARACTERISTICS

1000

Pulsed

100

10

TA = −50˚C

- Drain Current - A

D

1

I

0.1 0123

V

GS

- Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100

V

DS

= 10 V

150˚C

Pulsed

10

TA = 150˚C 75˚C 25˚C

1

−50˚C

25˚C 75˚C

V

DS

4

= 10 V

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

100

80

V

GS

60

40

- Drain Current - A

D

I

=10 V

4.0 V

20

5

0

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

1.0

V

DS

- Drain to Source Voltage - V

2.0

75

3.0

Pulsed

4.0

Pulsed

50

ID = 13 A

25

| - Forward Transfer Admittance - S

fs

0.1

| y

75

0.1

Pulsed

1

I

D

- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

50

V

GS

= 4.0 V

10 V

25

- Drain to Source On-state Resistance - mΩ

0

DS(on)

R

I

D

- Drain Current - A

10 100

1010.1

100

- Drain to Source On-state Resistance - mΩ

0

DS(on)

R

V

GS

- Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE

10 20

2.0

1.5

1.0

0.5

- Gate to Source Threshold Voltage - V

0

GS(th)

V

−50

0 50 100 150

T

ch

- Channel Temperature - ˚C

VDS = 10 V

D

= 1 mA

I

4

Data Sheet D12912EJ3V0DS

2SK3053

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

80

V

GS

60

40

= 4.0 V

10 V

20

ID = 13 A

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

10000

−50

0

50

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

Pulsed

100 150

VGS = 0 V f = 1 MHz

1000

- Capacitance - pF

rss

100

, C

oss

, C

iss

C

10

0.1

1 10 100

VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000

Pulsed

100

V

GS

= 10 V

10

V

GS

= 0 V

1

- Diode Forward Current - A

SD

I

0.1 0

0.5

1.0

1.5

VSD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1000

t

r

C

iss

C

oss

C

rss

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1

I

t

d(off)

t

f

10.1

D

- Drain Current - A

t

d(on)

10 100

REVERSE RECOVERY TIME vs. DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

0.1

1.0 10 100

I

F

- Drain Current - A

di/dt = 100 A/ s

GS = 0 V

V

µ

80

60

40

20

- Drain to Source Voltage - V

DS

V

Data Sheet D12912EJ3V0DS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

V

DD

= 48 V

30 V 12 V

V

DS

0

8412202816 24 32

Q

G

- Gate Charge - nC

V

GS

ID = 25 A

16

12

8

4

- Gate to Source Voltage - V

GS

V

5

2SK3053

!

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100

IAS = 12.5 A

10

1

VDD = 30 V V

GS

0.1 10

= 20 V → 0 V

R

G

= 25 Ω

Starting T

µ

ch

= 25˚C

100

µ

- Single Avalanche Current - A

AS

I

L - Inductive Load - H

E

AS

=

15.6 mJ

1

m10

SINGLE AVALANCHE ENERGY DERATING FACTOR

160 140 120

VDD = 30 V

G

= 25 Ω

R

GS

= 20 V → 0 V

V

AS

≤ 12.5 A

I

100

80 60 40

Energy Derating Factor - %

20

0

m

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

125 150

6

Data Sheet D12912EJ3V0DS

PACKAGE DRAWING

Isolated TO-220 (MP-45F)

2SK3053

0.3

±

15.0

0.7 ± 0.1

2.54

10.0 ± 0.3

123

φ

3.2

0.1

±

3

0.2

±

4

1.3 ± 0.2

2.54

1.Gate

2.Drain

3.Source

±

0.2

±

12.0

MIN.

13.5

0.2

4.5 ± 0.2

±

0.65

±

0.2

2.7

EQUIVALENT CIRCUIT

Drain (D)

Body

Gate (G)

Gate Protection

2.5

±

0.1

0.11.5 ± 0.2

Diode

Source (S)

Diode

Remark 1. This product is designed for consumer application and isn’t suitable for automotive application.

2.

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D12912EJ3V0DS

7

2SK3053

•

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

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•

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•

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•

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M8E 00. 4