Page 1
Power F-MOS FETs
2SK3044
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 130mJ
●V
= ±30V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
= 50ns
f
15.0±0.513.7±0.2
4.2±0.2
9.9±0.3
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
4.6±0.2
unit: mm
2.9±0.2
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Ratings
Unit
450
±30
±7
±14
100
40
2
150
−55 to +150
= 25°C)
Conditions
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 25V, ID = 4A
IDR = 8A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 4A
VDD = 150V, RL = 37.5Ω
mJ
W
°C
°C
23
2.54±0.3
5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
1
V
V
A
A
min
450
2
3
typ
0.56
5
1300
160
70
25
45
150
50
max
0.1
±1
5
0.75
−1.7
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
1
Page 2
Power F-MOS FETs 2SK3044
Area of safe operation (ASO) PD Ta EAS T
100
30
10
)
A
(
D
3
1
0.3
Drain current I
0.1
0.03
0.01
1 10 100 10003 30 300
DC
100µs
1ms
Non repetitive pulse
=25˚C
T
C
10ms
100ms
Drain to source voltage VDS (V
ID V
DS
16
VGS=15V
14
10V
12
)
A
(
10
D
8
6
Drain current I
4
2
0
0 102030405060
7V
6V
Drain to source voltage VDS (V
T
C
5.5V
t=10µs
=25˚C
5V
50W
)
)
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (˚C
ID V
GS
10
8
)
A
(
D
6
4
100˚C25˚C
TC=0˚C 150˚C
Drain current I
2
0
012108264
Gate to source voltage VGS (V
VDS=25V
100
)
mJ
(
80
60
40
20
Avalanche energy capacity EAS
0
25 17515012550 10075
)
)
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
Vth T
j
C
VDS=25V
=1mA
I
D
)
)
R
I
DS(on)
2.4
)
Ω
(
2.0
DS(on)
1.6
1.2
0.8
0.4
Drain to source ON-resistance R
0
0108264
Drain current ID (A
2
D
VGS=10V
T
C
=150˚C
100˚C
25˚C
0˚C
)
R
I
DS(on)
2.4
)
Ω
(
2.0
DS(on)
1.6
1.2
0.8
0.4
Drain to source ON-resistance R
0
0108264
D
TC=25˚C
V
GS
Drain current ID (A
=10V
15V
)
| Yfs | I
12
)
S
(
10
|
fs
8
6
4
2
D
VDS=25V
T
=25˚C
C
Forward transfer admittance |Y
0
0246810
Drain current ID (A
)
Page 3
Power F-MOS FETs 2SK3044
C
, C
, C
iss
oss
10000
)
,
)
pF
(
3000
rss
,C
Common source
(
1000
oss
,C
iss
300
C
)
100
, Output capacitance
)
30
Common source
(
Common source
(
10
3
Input capacitance
Reverse transfer capacitance
1
0 50 100 150 200 250
Drain to source voltage VDS (V
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
rss
V
DS
f=1MHz
=25˚C
T
C
C
C
C
400
350
)
V
(
iss
oss
rss
300
DS
250
200
150
100
Drain to source voltage V
50
)
R
t
th(t)
VDS, VGS Q
V
DS
V
GS
0
0 102030405060
Gate charge amount Qg (nC
g
ID=8A
=25˚C
T
C
)
(1)
(2)
16
14
12
10
8
6
4
2
0
300
)
)
V
ns
250
(
(
GS
d(off)
200
,t
f
,t
r
,t
d(on)
150
100
50
Gate to source voltage V
Switching time t
0
0246810
t
, tr, tf, t
d(on)
d(off)
Drain current ID (A
I
VDD=150V
V
GS
=25˚C
T
C
D
=10V
t
d(off)
t
f
t
r
t
d(on)
)
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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