Datasheet 2sk3018w Datasheet

2SK3018W

N-Channel POWER MOSFET

P b

Lead(Pb)-Free

Description:

* Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel.

Features:

* Simple Drive Requirement * Small Package Outline

1

GATE

*Gate Protection Diode

3 DRAIN

2 SOURCE

3

1

2

SOT-323(SC-70)

Maximum Ratings (T

=25°C Unless Otherwise Specified)

A

Rating Symbol Unit

Drain-SourceVoltage

Gate-Source Voltage

V

Continuous Drain Current

=25°C

T

A

Pulsed Drain Current (tp ≤ 10µS)

Power Dissipation (TA=25°C)

*

Operating Junction Temperature Range

Storage Temperature Range

Tstg

* With each pin mounted on the recommended lands.

DS

GS

I

D

I

DM

P

T

Value

30

±20

100

400

D

J

200

+150

-55 to +150

V

mA

mW

°C

Device Marking

2SK3018 = KN

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2SK3018W

Electrical Characteristics (T

Characteristic

Static

Drain-Source Breakdown Voltage VGS=0V, I D=10µA

Gate-Threshold Voltage VDS=3V , ID=100µA

Gate-Source Leakage Current VGS=±20V

Drain-Source Leakage Current VDS=30V, VGS=0

Static Drain-Source On-Resistance VGS=4V, ID=10mA VGS=2.5V, ID=1mA

Forward Transconductance VDS=3V, ID=10mA

Dynamic

Input Capacitance VDS=5V, VGS=0V, f=1.0MHz

Output Capacitance VDS=5V, VGS=0V, f=1.0MHz

=25°C Unless otherwise noted)

A

Symbol

V

(BR)DSS

V

GS (th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

Min Typ Max

30 - V

0.8 1.5 V

-

20

-

5.0

7.0

-

13

9

-

±1.0

1.0

8.0 13

-

Unit

µA

Ω

mS

pF

Reverse Transfer Capacitance VDS=5V, VGS=0V, f=1.0MHz

Switching

Turn-On Time VGS=5V, I D=10mA,

Rise time VGS=5V, I D=10mA,

Turn-O delay Time VGS=5V, I D=10mA,

Fall time VGS=5V, I D=10mA,

RL=500Ω ,RG=10Ω

C

rss

td(on)

t

r

td(on)

t

r

-

4

15

35

-

ns

-

80

-

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2SK3018W

TYPICAL ELECTRICAL CHARACTERISTICS

0.15

(A)DRAIN CURRENT : I

D

0.1

0.05

0

0 1 2 3 4 5

4V

3.5V

DRAIN-SOURCE VOLTAGE : VDS (V)

3V

2.5V

2V

VGS=1.5V

Ta=25°C

Pulsed

Fig.1 Typical output characteristics

)

Ω

(

(on)

DS

50

Ta=125

20

10

5

75 25

- 25

°C °C

GS

V

Pulsed

=4V

200m

VDS=3V

100m

Pulsed

50m

(A)

D

20m 10m

5m 2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125

2

75 25

−25

°C °C

3

Fig.2 Typical transfer characteristics

50

))

Ω

( n

o(

DS

Ta=125°C

20

10

5

75°C 25°C

−25°C

VGS=2.5V Pulsed

2

(V)

(th)

GS

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−25

40 1

−50 CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate threshold voltage vs.

channel temperature

15

) (

Ω

(on)

DS

10

25 50 75 100 125 150

0

VDS=3V

=0.1mA

D

I Pulsed

Ta=25°C Pulsed

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

resistance vs. drain current ( Ι

)

8

Ω

(

7

(on)

DS

6 5 4 3 2 1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

−50 0 25 150

ID=100mA

ID=50mA

−25 50 75 100 125

CHANNEL TEMPERATURE : Tch (°C)

)

VGS=4V Pulsed

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)

Fig.5 Static drain-source on-state

resistance vs. drain current (ΙΙ)

0.2

0.1

0.05

0.02

0.01

0.005

FORWARD TRANSFER

ADMITTANCE : |Yfs| (S)

0.002

0.001

0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05

°C

Ta=−25

°C

25

°C

75

°C

125

DRAIN CURRENT : ID (A)

VDS=3V Pulsed

0.1 0.2 0.5

5

ON-STATE RESISTANCE : R

STATIC DRAIN-SOURCE

0

0 5 10 15 20

GATE-SOURCE VOLTAGE : VGS (V)

ID=0.1A

ID=0.05A

Fig.6 Static drain-source

on-state resistance vs. gate-source voltage

(A)REVERSE DRAIN CURRENT : I

100m

DR

50m 20m

10m

5m 2m

1m

0.5m

0.2m

0.1m 0 0.5 1

SOURCE-DRAIN VOLTAGE : VSD (V)

Ta=125

75 25

−25

VGS=0V Pulsed

°C °C °C °C

1.5

Fig.7 Static drain-source on-state

resistance vs. channel temperature

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Fig.8 Forward transfer

admittance vs. drain current

3/5 30-Oct-09

Fig.9 Reverse drain current vs.

source-drain voltage ( Ι )

2SK3018W

200m

(A)

100m

DR

50m 20m

10m

VGS=4V 0V

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : VSD (V)

10.50

Fig.10 Reverse drain current vs.

source-drain voltage ( ΙΙ )

Ta=25 Pulsed

°C

1.5

50

20

10

5

2

CAPACITANCE : C (pF)

1

0.5

0.1

0.2 0.5 1 2 5 10 20 50

DRAIN-SOURCE VOLTAGE : VDS(V)

Fig.11 Typical capacitance vs.

drain-source voltage

Switching characteristics measurement circuit

=25

Ta

°C

f=1MH

Z

VGS=0V

iss

C

oss

C

rss

C

Pulse width

1000

500

200 100

50

20 10

SWITCHING TIME : t (ns)

5

2

0.1

t

f

t

d(off)

r

t

d(on)

t

0.2 0.5 1 2 5 10 20 50 DRAIN CURRENT : ID (mA)

Fig.12 Switching characteristics

(See Figures 13 and 14 for the measurement circuit and resultant waveforms)

Ta=25°C V

=5V

DD GS

V

=5V

G

R

=10Ω

Pulsed

100

V

GS

G

R

D.U.T.

D

I

DS

V

L

R

V

DD

Fig.13 Switching time measurement circuit

GS

V

DS

50%

10%

90%

r

t

d(on)

t

on

t

Fig.14 Switching time waveforms

90%

t

d(off)

50%

10%

90%

f

t

off

t

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2SK3018W

SOT-323 Outline Demensions

A

B

TOP V IE W

D

E

G

H

C

K

L

J

Unit:mm

SOT-323

Dim

A B C D E G H

J K L

M

Min

0.30

1.15

2.00

-

0.30

1.20

1.80

0.00

0.80

0.42

0.10

Max

0.40

1.35

2.40

0.65

0.40

1.40

2.20

0.10

1.00

0.53

0.25

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