Datasheet 2SK2969 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6314

2SK2969

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.4

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Package Dimensions

unit:mm

2091A

[2SK2969]

3

1

0.95

0.95

1.9

2.9

0.5

1.5

2

0.5

0.8

0.16

2.5

0 to 0.1

1 : Gate

1.1

2 : Source
3 : Drain
SANYO : CP

03V
01±V

8.0A

2.3A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1=

0=03V

SG

V,V03=

SD
SG
SD

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

Am004=1.16.1S

D
V,Am004=

V4=082073mΩ

SG

V,Am001=

V5.2=043025mΩ

SG

nimpytxam

Marking : GK Continued on next page.

31000TS (KOTO) TA-2652 No.6314–1/4

sgnitaR

tinU

2SK2969

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

V

4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

VDD=15V

D

ID=400mA
RL=37.5Ω

V

OUT

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=02Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS02sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,Am008=

D

0=8.02.1V

SG

sgnitaR

nimpytxam

Am008=6Cn
Am008=1Cn
Am008=2Cn

tinU

P.G

1.0

8.0V 6.0V

0.9

0.8

0.7

–A

D

0.6

0.5

0.4

0.3

Drain Current, I

0.2

0.1

10.0V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

50Ω

ID-

4.0V 3.0V

2.5V

2.0V

V

2SK2969

S

DS

VGS=1.5V

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

10

7
5

fs|–S

y

3
2

1.0
7
5

3
2

D

Ta=

25

-

75

VDS=10V

°C

°C

Forward Transfer Admittance, |

0.1

23 57 23 2357

0.01 0.1 1.0

Drain Current, ID–A

ID-

V

75°C

GS

°C

25

Ta=

°C

25

-

2.0

1.8

1.6

1.4

–A

D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2

VDS=10V

0

0

0.5 1.0 1.5 2.0 2.5

Gate-to-Source Voltage, VGS–V

R

500

450

400

–mΩ

°C

25

350

300

DS(on)

250

200
150

100

50

Static Drain-to-Source

On-State Resistance, R

0

0.1A

10 2345678910

DS(on)

ID=0.4A

Gate-to-Source Voltage, V

-

V

GS

°C

Ta=25

–V

GS

No.6314–2/4

R

20

DS(on)

=0.1A,V

I

D

I

D

020

600
550
500
450

–mΩ

400
350

DS(on)

300
250
200
150
100

50

Static Drain-to-Source

On-State Resistance, R

0

60 40 60 80 100 120 140

-

-40-

=0.4A,V

GS

-

=2.5V

=4V

GS

Ta

Ambient Temperature, Ta – ˚C

Ciss,Coss,Crss-V

50 1015202530

Ciss, Coss, Crss – pF

1000

100

1.0

7
5

3
2

7
5

3
2

10

7
5

3
2

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

100

VDD=15V

7

VGS=4V

5

3
2

10

7
5

3

Switching Time, SW Time – ns

2

1.0

723 23557

SW Time

Drain Current, ID–A

t

d

t

(off)

f

-

I

D

t

r

td(on)

1.00.1 0.1 1.0 100.01

DS

2SK2969

f=1MHz

Ciss

Coss

Crss

5

VGS=0

3
2

1.0
7

–A

5

F

3
2

0.1
7
5

Forward Current, I

3
2

0.01
0 0.1 0.2 0.3 0.50.4 0.6 0.7 0.8 0.9 1.11.0

IF-

75°C

V

SD

°C

25°C

25

-

Ta=

Diode Forward Voltage, VSD–V

-

10

VDS=10V

9

ID=800mA

V

8

7

GS –

6

5

4

3

2

Gate-to-Source Voltage, V

1

0

7
5

IDP=3.2A

3
2

ID=0.8A

1.0
7
5

–A

3

D

2

,I

0.1
7
5

3
2

Drain Current

0.01
7
5

3

Ta=25°C

2

Single pulse

0.001

V

GS

1234 650

Operation in this area
is limited by RDS(on).

Qg

A S O

DC operation

23 5723 5723 57 23 5

Drain-to-Source Voltage, VDS–V

100µs

1ms

10ms

0.28

0.25

0.24

–W

D

0.20

0.16

0.12

0.08

0.04

Allowable Power Dissipation, P

P

-

D

0

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C

Ta

No.6314–3/4

2SK2969

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6314–4/4