Datasheet 2SK291 Datasheet (HIT)

Silicon N-Channel Junction FET

Application

Low frequency low noise amplifier

Outline

TO-92 (2)

2SK291

1. Drain

2. Source

3. Gate

3

2

1

2SK291

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Gate to drain voltage V
Gate to source voltage V
Drain current I
Gate current I

GDO

GSO

D

G

Channel power dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to drain breakdown

V

(BR)GDO

voltage
Gate to source breakdown

V

(BR)GSO

voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V

GSS

DSS

GS(off)

Forward transfer admittance |yfs| 25 45 — mS V
Input capacitance Ciss — 8.5 — pF V
Noise voltage referred to input e

n

Note: 1. The 2SK291 is grouped by I

Grade P Q R S T

I

DSS

5 to 16 14 to 24 20 to 32 28 to 42 36 to 50

–15 — — V IG = –100 µA

–15 — — V IG = –100 µA

— — 10 nA VGS = –7 V, VDS = 0

1

*

5 — 50 mA VDS = 5 V, VGS = 0
— — –3.0 V V

— 1.2 — nV/√Hz V

as follows.

DSS

–15 V
–15 V
50 mA
5mA

= 5 V, ID = 100 µA

DS

= 5 V, VGS = 0, f = 1 kHz

DS

= 5 V, VGS = 0, f = 1 MHz

DS

= 5 V, ID = 5 mA, Rg = 0,

DS

f = 100 kHz

2

2SK291

Maximum Channel Power

Dissipation Curve

450

(mW)

ch

300

150

Channel Power Dissipation P

0

50 100 150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

30

VDS = 5 V

20

(mA)

D

Typical Output Characteristics

30

VDS = 5 V

= 0 V

V

GS

20

(mA)

D

–0.1
–0.2
–0.3

10

Drain Current I

–0.4

–0.5
–0.6

–0.8

0 246

Drain to Source Voltage V

DS

(V)

Forward Transfer Admittance vs.

Drain to Source Voltage

60

VDS = 5 V

 (mS)

f = 1 kHz

50

fs

40

10

Drain Current I

0
–2.0 –1.2–1.6 –0.8 0–0.4

Gate to Source Voltage V

GS

(V)

30

20

10

0

Forward Transfer Admittance y

–2.0 –1.2–1.6 –0.8 0–0.4

Gate to Source Voltage V

GS

(V)

3

2SK291

Input Capacitance vs.

Gate to Source Voltage

14

12

(pF)

iss

VDS = 5 V
f = 1 MHz

10

8

6

Input Capacitance C

4
–1.0 –0.6–0.8 –0.4 0–0.2

Gate to Source Voltage V

Noise Voltage Referred

to Input vs. Frequency

50

√

VDS = 5 V
R

20

g

= 0

(nV/ Hz)

n

10

5

I

= 2 mA

D

2

5 mA

10 mA

1.0

GS

(V)

Noise Voltage Referred to Input vs.

Signal Source Resistance

20

√

10

VDS = 5 V

(nV/ Hz)

n

I

= 5 mA

D

5

Ta = 25°C

f = 120 Hz

2

100 kHz

1.0

0.5

Noise Voltage Referred to Input e

0.2

√ 

4 KTR

g

1 100

Signal Source Resistance Rg (Ω)

Noise Voltage Referred to Input vs.

Drain to Source Voltage

20

√

10

(nV/ Hz)

n

5

2

1.0

0.5

f = 1 kHz

100 kHz

1 k 10 k10

ID = 10 mA
R

= 0

g

Noise Voltage Referred to Input e

0.5
10 1 k

4

Frequency f (Hz)

Noise Voltage Referred to Input e

0.2

10 k 100 k100

0.2 1.0 5 200.5 2 10
Drain to Source Voltage V

DS

(V)

2SK291

Equivalent Noise Resistance vs.

Drain Current

1,000

(Ω)

500

eq

VDS = 5 V
f = 0.5~4 MHz

200

100

50

20

Equivalent Noise Resistance R

10

1 5 20 10021050

Drain Current I

(mA)

D

Equivalent Noise Resistance

vs. Frequency

70

60

VDS = 5 V
I

= 10 mA

D

(Ω)

eq

50

40

30

Equivalent Noise Resistance R

20

024135

Frequency f (MHz)

5

Unit: mm

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-92 (2)
Conforms
Conforms

0.25 g

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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