Datasheet 2SK2864 Datasheet (SANYO)

2SK2864

No.6610-1/4

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• Enables simplified fabrication, high-density mounting,

and miniaturization in end products due to the surface
mountable package.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage V

DSS

200 V

Gate-to-Source Voltage V

GSS

±20 V

Drain Current (DC) I

D

20 A

Drain Current (Pulse) I

DP

PW≤10µs, duty cycle≤1% 80 A

Allowable Power Dissipation P

D

Tc=25°C50W
Channel T emperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions

min typ max

Unit

Drain-to-Source Breakdown Voltage V

(BR)DSSID

=1mA, VGS=0 200 V

Gate-to-Source Breakdown Voltage V

(BR)GSSIG

=±100µA, VDS=0 ±20 V

Zero-Gate Voltage Drain Current I

DSS

VDS=200V, VGS=0 100 µA
Gate-to-Source Leakage Current I

GSS

VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 4.0 V
Forward Transfer Admittance



yfs



VDS=10V, ID=10A 6 10 S
Static Drain-to-Source On-State Resistance RDS(on) ID=10A, VGS=10V 90 120 mΩ

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6610

2SK2864

Package Dimensions

unit : mm

2128

[2SK2864]

13001 TS IM TA-3092

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

1 : Gate
2 : Source
3 : Drain

SANYO : ZP

6.2

7.8

8.2

0.2

0.4

4.2

1.0

1.0

5.08

2.54

2.54

8.4

10.0

1.2

0.3

0.6

0.6

0.7

7.8

5.2

6.2

10.0

6.0

2.5

1

2

3

Ultrahigh-Speed Switching Applications

2SK2864

No.6610-2/4

Drain-to-Source V oltage, VDS -- V

Drain Current, I

D

-- A

Case Temperature, Tc -- °C

RDS(on) -- Tc

Static Drain-to-Source

On-State Resistance, R

DS

(on) -- mΩ

Static Drain-to-Source

On-State Resistance, R

DS

(on) -- mΩ

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

GS

Gate-to-Source V oltage, VGS -- V

ID -- V

GS

Drain Current, I

D

-- A

ID -- V

DS

012345678

IT01918 IT01919

Tc=25°C
ID=10A

0 2 4 6 8 10121416

200

160

120

80

40

180

140

100

60

IT01920

--60

--40

--20 0 20 40 60 80 100 120

250

200

150

100

50

0

140 160

IT01921

20

18

16

14

12

10

8

6

4

2

012345

0

20

18

16

14

12

10

8

6

4

2
0

VGS=4V

5V

6V

8V

10V

15V

--25°C

25°C

Tc=75°C

VDS=10V

VGS=10V
ID=10A

Continued from preceding page.

Ratings

Parameter Symbol Conditions

min typ max

Unit

Input Capacitance

Ciss1 VDS=0, f=1MHz 3000 3800 pF

Ciss2 VDS=20V , f=1MHz 1700 2150 pF
Output Capacitance Coss VDS=20V , f=1MHz 400 420 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 150 185 pF
Turn-ON Delay Time td(on) See specified Test Circuit 28 35 ns
Rise Time t

r

See specified Test Circuit 85 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 130 165 ns
Fall Time t

f

See specified Test Circuit 90 105 ns
Diode Forward Voltage V

SD

IS=20A, VGS=0 1.0 1.5 V
Gate resistance Rg f=1MHz 1.0 2.0 3.0 Ω

Switching Time Test Circuit

PW=10µs
D.C.≤1%

10V

0V

P.G

50Ω

G

S

D

ID=10A
RL=10Ω

VDD=100V

V

OUT

2SK2864

V

IN

V

IN

2SK2864

No.6610-3/4

Case Temperature, Tc -- °C

Allowable Power Dissipation, P

D

-- W

PD -- Tc

0020 40 60 80 100 120 140 160

60

10

20

30

40

50

IT01928

SW Time -- I

D

A S O

Drain-to-Source V oltage, V

DS

-- V

Drain Current, I

D

-- A

Drain Current, I

D

-- A

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- V

DS

Drain-to-Source V oltage, V

DS

-- V

Total Gate Charge, Qg -- nC

Ciss, Coss, Crss -- pF

Gate-to-Source V oltage, V

GS

-- V

0 5 10 15 20 25 30 35 40

10

9

8

7

6

5

4

3

2

1
0

45

IT01925

0

10000

7
5

3
2

100

7
5

3
2

7
5

3
2

1000

10

20 30 40 50 10060 70 80 9010

IT01924

V

GS

-- Qg

VDS=100V
ID=10A

f=1MHz

Ciss

Coss

Crss

100

7
5

3
2

7
5

3
2

7
5

3
2

10

1.0

0.1
2

3

5

7

1.0

2

3

5

7

10

2

3

5

7

100 1000

IT01927

1000

100

7

5

3
2

7
5

3
2

10

0.1

23

5

7

23

5

7

1.0 10

IT01926

VDD=100V
VGS=10V

t

r

t

d

(off)

t

f

td(on)

1ms

IDP=80A

100µs

1ms

10ms

100ms

DC operation

ID=20A

Operation in
this area is
limited by RDS(on).

Tc=25°C
Single pulse

<10µs

yfs -- I

D

Diode Forward V oltage, V

SD

-- V

Forward Drain Current, I

F

-- A

Drain Current, I

D

-- A

Forward Transfer Admittance, yfs -- S

100

7
5

3
2

7
5

3
2

7
5

3
2

10

1.0

0.1

0.1 1.0 10

IT01922

0 0.2 0.4 0.6 0.8 1.41.0 1.2

I

F

-- V

SD

10

100

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

1.0

0.1

0.01

2 3 57 2 3 57 23

IT01923

Tc= --25°C

25°C

75°C

VDS=10V

Tc=75°C

25°C

--25°C

VGS=0

2SK2864

No.6610-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

PS