Datasheet 2SK2851 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A)

DS(on)

• 4V gate drive devices.

• Large current capacitance

ID = 5 A

Outline

2SK2851

Silicon N Channel MOS FET High Speed Power Switching

ADE-208-478

1st. Edition

TO-92MOD.

G

D

3

2

1

S

1. Source

2. Drain

3. Gate

2SK2851

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Avalanche current IAP* Avalanche energy EAR* Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V ±20 V 5A 20 A 5A 5A

2.14 mJ

0.9 W

2

2SK2851

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

60——V I

voltage Gate to source breakdown

V

(BR)GSS

±20——V I

voltage Zero gate voltege drain

I

DSS

——10µAV

current Gate to source leak current I Gate to source cutoff voltage V Static drain to source on state R resistance R

GSS

GS(off)

DS(on)

——±10 µAV

1.0 — 2.0 V ID = 1mA, VDS = 10V — 0.055 0.07 Ω ID = 2.5A, VGS = 10V*

— 0.07 0.1 Ω ID = 2.5A, VGS = 4V* Forward transfer admittance |yfs|57—SI Input capacitance Ciss — 500 — pF VDS = 10V Output capacitance Coss — 260 — pF VGS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward

V

d(on)

r

d(off)

f

DF

— 10 — ns VGS = 10V, ID = 2.5A

— 30 — ns RL = 12Ω

— 100 — ns

—75—ns

— 0.9 — V ID = 5A, VGS = 0 voltage

Body to drain diode reverse

t

rr

— 50 — ns IF = 5A, VGS = 0 recovery time

Note: 1. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

= 60 V, VGS = 0

DS

= ±16V, VDS = 0

GS

= 2.5A, VDS = 10V*

D

diF/ dt = 50A/µs

1

3

2SK2851

Main Characteristics

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

10

10 V

4 V

8

3.5 V

3 V

100

Maximum Safe Operation Area

30 10

D

3 1

0.3

Operation in

0.1

0.03

0.01

this area is limited by R

Ta = 25 °C 1 shot pulse

DS(on)

Drain Current I (A)

0.1 0.3 1 Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

V = 10 V

DS

Pulse Test

8

10 µs

PW = 10 ms (1shot)

100 µs

1 ms

DC Operation

3

10

DS

30

100

D

6

4

Drain Current I (A)

2

0

Drain to Source Voltage V (V)

4

Pulse Test

2.5 V

V = 2 V

GS

246810

DS

D

6

4

Drain Current I (A)

2

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

2SK2851

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

0.4

DS(on)

V (V)

0.3

0.2

0.1

Drain to Source Saturation Voltage

0

48

12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.20

Ω

Pulse Test

0.16

DS(on)

R ( )

0.12

V = 4 V

0.08

GS

I = 5 A

D

Pulse Test

I = 5 A

D

2 A 1 A

Drain to Source On State Resistance

16 20 1 10 1000.1

GS

1, 2 A

1, 2, 5 A

Static Drain to Source on State Resistance

vs. Drain Current

1.0 Pulse Test

0.5

DS(on)

0.2

R ( )Ω

0.1

0.05

V = 4 V

GS

10 V

0.02

0.01 3

Drain Current I (A)

300.3

D

Forward Transfer Admittance vs.

Drain Current

50

V = 10 V

20

10

5

2

DS

Pulse Test

Tc = –25 °C

25 °C

75 °C

fs

0.04 10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

1

Forward Transfer Admittance |y | (S)

0.5

0.1 0.2 Drain Current I (A)

1510

0.5

2

D

5

2SK2851

Body to Drain Diode Reverse

Recovery Time

500

di / dt = 50 A / µs V = 0, Ta = 25 °C

200

GS

100

50

20

10

Reverse Recovery Time trr (ns)

5

0.1 0.5 1 2 100.2 5 Reverse Drain Current I (A)

DR

Typical Capacitance vs. Drain to Source Voltage

2000 1000

500

200

Ciss

Coss

100

50

Capacitance C (pF)

20

V = 0

GS

f = 1 MHz

10

Crss

01020304050

Drain to Source Voltage V (V)

DS

100

I = 5A

D

80

DS

60

V

DS

V

GS

V = 10 V

DD

40

Dynamic Input Characteristics

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V 10 V

8 16 24 32 400

Gate Charge Qg (nc)

25 V 50 V

20

16

GS

1000

300

Switching Characteristics

100

12

30

8

10

4

Switching Time t (ns)

3

Gate to Source Voltage V (V)

0

1

0.1 0.2 Drain Current I (A)

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

1510

0.5 2

D

6

2SK2851

(S)

Reverse Drain Current vs.

Source to Drain Voltage

10

10 V

8

DR

5 V

6

V = 0, –5 V

GS

4

2

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Pulse Test

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D = 1

1

s (t)

γ

0.3

0.5

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

2.5 I = 5 A

AP

AR

2.0

V = 25 V

DD

duty < 0.1 % Rg > 50

Ω

1.5

1.0

0.5

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Ta = 25°C

0.2

0.1

0.03

0.1

0.05

0.02

0.01

0.003

Normalized Transient Thermal Impedance

0.01

1shot pulse

0.001

0.00001

0.0001 0.001 0.01 0.1 1000

θ γ θ θ

P

DM

110

Pulse Width PW

ch – a(t) = s (t) • ch – a ch – a = 139 °C/W, Ta = 25 °C

PW

D =

T

PW

T

100

10000

7

2SK2851

Vin 15 V

Avalanche Test Circuit Avalanche Waveform

V

DSS

V – V

DSS DD

AR

1 2

V

DS

L

E = • L • I •

AP

2

Monitor

I

AP

Monitor

I

Rg

D. U. T

V

DD

AP

V

I

D

50Ω

V

DD

0

DS

V

(BR)DSS

Switching Time Test Circuit Switching Time Waveform Vin Monitor

Vout Monitor

D.U.T.

R

Vin 10 V

50Ω

L

V

DD

= 30 V

Vin Vout

td(on)

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

Package Dimentions

2SK2851

Unit: mm

0.70 max

0.75 max

0.60 max

0.55 max

5.2 max

0.7

8.5 max

2.3 max

10.1 min

4.2 max

0.5 max

2.54

1.27

Hitachi Code

EIAJ

JEDEC

TO–92Mod.

SC–51

—

9

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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