Datasheet 2SK2828 Datasheet (HIT)

2SK2828

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC–DC converter

• Avalanche ratings

ADE-208-514 C (Z)

4th. Edition

Feb 1999

Outline

TO–3P

1

G

D

2

1. Gate

1

2

3

S

3

2. Drain
(Flange)

3. Source

2SK2828

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

700 V
±30 V
12 A
48 A
12 A
175 W

2

2SK2828

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

R

DS(on)

resistance
Forward transfer admittance |yfs| 5.5 9.0 — S ID = 6A, VDS = 10V*
Input capacitance Ciss — 1850 — pF VDS = 10V
Output capacitance Coss — 400 — pF VGS = 0
Reverse transfer capacitance Crss — 45 — pF f = 1MHz
Total gate charge Qg — 35 — nc VDD = 400V
Gate to source charge Qgs — 8 — nc VGS = 10V
Gate to drain charge Qgd — 10 — nc ID = 12A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

700 — — V ID = 10mA, VGS = 0
±30——V I
——±10 µAV
— — 100 µAV

= ±100µA, VDS = 0

G

= ±25V, VDS = 0

GS

= 560 V, VGS = 0

DS

2.0 — 3.0 V ID = 1mA, VDS = 10V*
— 0.9 1.2 Ω ID = 6A, VGS = 10V*

— 25 — ns ID = 6A, RL = 5Ω
— 65 — ns VGS = 10V
— 140 — ns
—55—ns
— 0.95 — V IF = 12A, VGS = 0
— 2.5 — µsI

= 12A, VGS = 0

F

diF/ dt =100A/µs

3

3

3

3

2SK2828

Main Characteristics

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

20

10 V

16

D

12

8 V

6 V

5 V

100

Maximum Safe Operation Area

50

20

D

10

DC Operation (Tc = 25°C)

5
2

Operation in

1

0.5

this area is
limited by R

DS(on)

Drain Current I (A)

0.2
Ta = 25 °C

0.1

105 20 50 100 500 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

D

12

10 µs

100 µs

PW = 10 ms (1shot)

1 ms

200

DS

–25°C

25°C

8

Drain Current I (A)

4

0

4

4.5 V

V = 4 V

GS

Pulse Test

10 20 30 40 50

Drain to Source Voltage V (V)

DS

8

Drain Current I (A)

4

0

246810

Gate to Source Voltage V (V)

Tc = 75°C

GS

2SK2828

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

20

Pulse Test

16

DS(on)

V (V)

12

I = 10 A

D

8

5 A

4

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20 1 5 20 10021050

GS

Static Drain to Source on State Resistance

vs. Temperature

4.0
Pulse Test

W

3.2

DS(on)

R ( )

2.4

I = 10 A

D

1.6

V = 10 V

GS

5 A

0.8

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

2

DS(on)

1

R ( )W

0.5

V = 10, 15V

GS

0.2

0.1

Drain to Source On State Resistance

0.05

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

10

Tc = –25 °C

5

25 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

0.2 1 2 10 20

0.5 5

75 °C

V = 10 V

DS

Pulse Test

Drain Current I (A)

D

5

2SK2828

Body–Drain Diode Reverse

Recovery Time

5

2

1

0.5

0.2

0.1

Reverse Recovery Time trr (ns)

0.05

0.1 0.2 1 2 10 20 50

0.5

Reverse Drain Current I (A)

di / dt = 100 A / µs
V = 0, Ta = 25 °C

GS

5

DR

Typical Capacitance vs.

Drain to Source Voltage

5000

2000
1000

500

200
100

50

Capacitance C (pF)

20
10

5

Ciss

Coss

V = 0

GS

f = 1 MHz

Crss

01020304050

Drain to Source Voltage V (V)

DS

1000

Dynamic Input Characteristics

ID = 12 A

V

800

DS

600

V

400

200

DS

V = 400 V

DD

Drain to Source Voltage V (V)

0

20 40 60 80 100

GS

V = 100 V

DD

250 V
100 V

Gate Charge Qg (nc)

250 V
400 V

20

16

GS

500

200

Switching Characteristics

100

12

t

f

50

8

20

4

Switching Time t (ns)

10

Gate to Source Voltage V (V)

0

5

0.1 0.3 1 3 10 30 100
Drain Current I (A)

t

d(off)

t

d(on)

t

r

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

50

40

DR

2SK2828

Reverse Drain Current vs.

Source to Drain Voltage

30

20

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

g

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

V = 0, –5 V

GS

Pulse Test

SD

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 0.71 °C/W, Tc = 25 °C

P

DM

100 m 1 10

PW

T

Tc = 25°C

PW

D =

T

7

2SK2828

Switching Time Test Circuit Switching Time Waveform

Vin Monitor

Vin
10 V

50W

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

10%

10%

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

8

Package Dimentions

16.0 max

0.5 typ

f

3.2 ± 0.2

1.0 typ

2SK2828

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

2.0 typ

1.0 ± 0.2

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

0.9 typ

1.0 typ

2.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P
SC–65

—

9

2SK2828

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> [phone]
Fax: <1> [phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

10

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX