Datasheet 2SK2800 Datasheet (HIT)

2SK2800

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

= 15 mΩ typ.

DS(on)

• High speed switching

• Low drive current

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-513G (Z)

8th. Edition

Jun 1998

TO–220AB

G

D

3

1. Gate

2. Drain (Flange)

3. Source

1

2

S

2SK2800

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note 3

AP

Note 3

AR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

60 V
±20 V
40 A
160 A
40 A
40 A
137 mJ
50 W

2

2SK2800

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0

1.5 — 2.5 V ID = 1mA, VDS = 10V
—1520mΩID = 20A, VGS = 10V

—2540mΩID = 20A, VGS = 4V
Forward transfer admittance |yfs| 2035—S ID = 20A, VDS = 10V
Input capacitance Ciss — 1500 — pF VDS = 10V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

— 20 — ns ID = 20A, RL = 1.5Ω

— 180 — ns VGS = 10V

— 200 — ns

— 200 — ns

— 0.95 — V IF = 40A, VGS = 0

—70—V I
recovery time

Note: 4. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

= 40A, VGS = 0

F

diF/ dt =50A/µs

Note4

Note4

Note4

3

2SK2800

Main Characteristics

100

Power vs. Temperature Derating

75

50

25

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

10 V

6 V

40

4.5 V

4 V

1000

Maximum Safe Operation Area

300
100

D

30
10

3

Operation in

1

this area is
limited by R

Drain Current I (A)

0.3
Ta = 25 °C

0.1

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

10 µs

100 µs

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

DS(on)

3

10

1 ms

30

DS

100

D

30

20

Drain Current I (A)

10

0

Drain to Source Voltage V (V)

4

Pulse Test

3.5 V

V = 3 V

GS

246810

DS

D

30

Tc = 75°C

20

Drain Current I (A)

10

0

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

2SK2800

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0
Pulse Test

1.6

DS(on)

V (V)

1.2

I = 50 A

0.8

0.4

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

D

20 A
10 A

12

16 20 1 10 100250

GS

Static Drain to Source on State Resistance

vs. Temperature

0.05
Pulse Test

W

0.04

DS(on)

R ( )

0.03

V = 4 V

GS

0.02

I = 20 A

D

50 A

10, 20 A

0.01

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

10 A

Static Drain to Source on State Resistance

vs. Drain Current

0.5
Pulse Test

0.2

0.1

DS(on)

R ( )W

0.05
V = 4 V

GS

0.02

0.01

Drain to Source On State Resistance

0.005

10 V

205

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

100

fs

50

20

10

Tc = –25 °C

25 °C

75 °C

5

2

Forward Transfer Admittance |y | (S)

1

1

5

2

Drain Current I (A)

V = 10 V

DS

Pulse Test

10 20 50

D

100

5

2SK2800

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

100

I = 40 A

D

80

DS

60

V

DS

V = 10 V

DD

25 V
50 V

V

GS

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

8 16243240

Gate Charge Qg (nc)

Typical Capacitance vs.

5000

2000

1000

500

200

Capacitance C (pF)

100

50

Drain to Source Voltage

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

GS

1000

300

100

12

30

8

10

4

Switching Time t (ns)

3

Gate to Source Voltage V (V)

0

1

0.1 0.3 1 3 10 30 100
Drain Current I (A)

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

2SK2800

Reverse Drain Current vs.

Source to Drain Voltage

50

40

DR

10 V

30

5 V

V = 0, –5 V

20

GS

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
15 V

50W

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

200

AR

160

120

80

40

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = 40 A

AP

V = 25 V

DD

duty < 1 %
Rg > 50

W

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

7

2SK2800

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

g

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 2.5 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

Switching Time Test Circuit Waveform

R

L

V
= 30 V

Vout
Monitor

DD

Vin
Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

Vin Monitor

Vin
10 V

D.U.T.

50W

8

Package Dimensions

2SK2800

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

9

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