Datasheet 2SK2734 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.04Ω typ (at VGS = 10 V, ID = 2.5 A)

DS(on)

• 4V gate drive devices.

• Large current capacitance

ID = 5 A

Outline

2SK2734

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-520

1st. Edition

TO-92MOD.

G

D

3

2

1

S

1. Source

2. Drain

3. Gate

2SK2734

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

DSS

GSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 47—SI
Input capacitance Ciss — 550 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 155 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

30——V I

±20——V I

——10µAVDS = 30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.0 — 2.0 V ID = 1mA, VDS = 10V
— 0.04 0.055 Ω ID = 2.5A, VGS = 10V*
— 0.055 0.08 Ω ID = 2.5A, VGS = 4V*

— 14 — ns VGS = 10V, ID = 2.5A
— 80 — ns RL = 4Ω
—80—ns
—65—ns
— 1.0 — V IF = 5A, VGS = 0

— 40 — ns IF = 5A, VGS = 0

30 V
±20 V
5A
20 A
5A

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

= 2.5A, VDS = 10V*

D

di

/ dt = 50A/µs

F

1

1

1

2

Main Characteristics

2SK2734

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

10

4 V

3.5 V

5 V

10 V

8

Pulse Test

100

Maximum Safe Operation Area

30
10

D

10 µs

3
1

Operation in

0.3

0.1

this area is
limited by R

Drain Current I (A)

DC Operation

DS(on)

0.03
Ta = 25°C

0.01

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

V = 10 V

DS

Pulse Test

4

100 µs

1 ms

PW = 10 ms

(1 shot)

3

10

DS

30

100

D

6

4

Drain Current I (A)

2

0

246810

Drain to Source Voltage V (V)

3 V

V = 2.5 V

GS

DS

D

3

2

Drain Current I (A)

1

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

3

2SK2734

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

0.4

DS(on)

V (V)

0.3

0.2

0.1

Drain to Source Saturation Voltage

0

48

12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.10

Ω

Pulse Test

0.08

DS(on)

R ( )

0.06

V = 4 V

GS

0.04
10 V

0.02

Pulse Test

I = 5 A

D

2.5 A
1 A

16 20 1 10 1000.1

GS

I = 5 A

D

1, 2.5 A

1, 2.5, 5 A

Static Drain to Source on State Resistance

vs. Drain Current

1.0
Pulse Test

0.5

DS(on)

0.2

R ( )Ω

0.1

V = 4 V

GS

0.05
10 V

0.02

Drain to Source on State Resistance

0.01

3

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

V = 10 V

DS

fs

Pulse Test

20

10

Tc = –25°C

5

25°C

2

75°C

1

300.3

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

Forward Transfer Admittance |y | (S)

0.5

0.1 0.2
Drain Current I (A)

1510

0.5

2

D

2SK2734

Body to Drain Diode Reverse

Recovery Time

500

di / dt = 50 A / µs, V = 0
Ta = 25 °C, Pulse Test

200

GS

100

50

20

10

Reverse Recovery Time trr (ns)

5

0.01 0.05 0.1 0.2 10.02 0.5

Reverse Drain Current I (A)

25

DR

Typical Capacitance vs.
Drain to Source Voltage

2000
1000

500

Ciss

Coss

200
100

50

Capacitance C (pF)

20

V = 0

GS

f = 1 MHz

10

Crss

01020304050

Drain to Source Voltage V (V)

DS

Dynamic Input Characteristics

50

I = 5A

D

40

DS

V = 5 V

DD

10 V

30

20 V

V

DS

V

GS

20

10

Drain to Source Voltage V (V)

0

V = 20 V

DD

10 V

5 V

8 16243240

Gate Charge Qg (nc)

20

16

GS

500

200

Switching Characteristics

100

12

50

8

20

4

0

Switching Time t (ns)

10

V = 10 V, V = 10 V

Gate to Source Voltage V (V)

GS

PW = 2 µs, duty < 1 %

5

0.1 0.5 1

0.05 0.2
Drain Current I (A)

t

DD

f

t

d(off)

t

r

t

d(on)

D

52

5

2SK2734

Reverse Drain Current vs.

Source to Drain Voltage

10

8

DR

10 V

5 V

6

4

2

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D = 1

1

s (t)

γ

0.3

0.5

0.2

0.1

0.03

0.1

0.05

0.02

0.01

0.003

Normalized Transient Thermal Impedance

0.01

1shot pulse

0.001
10 µ

100 µ 1 m 10 m 100 m 1000

V = 0, –5 V

GS

Pulse Test

SD

θ γ θ

ch – a(t) = s (t) • ch – a

θ

ch – a = 139 °C/W, Ta = 25 °C

P

DM

110

Pulse Width PW (S)

PW

T

100

Ta = 25°C

PW

D =

T

10000

6

Switching Time Test Circuit Switching Time Waveforms

2SK2734

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK2734

Package Dimentions

Unit: mm

0.70 max

0.75 max

0.60 max

0.55 max

5.2 max

0.7

8.5 max

2.3 max

10.1 min

4.2 max

0.5 max

TO–92Mod.

SC–51

—

2.54

1.27

Hitachi Code

EIAJ

JEDEC

8

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